N-CHANNEL IRF840/841 POWER MOSFETS FEATURES oz Lower Ros(on) Improved inductive ruggedness Fast switching times - Rugged polysilicon gate cell structure + Lower input capacitance - Extended safe operating area improved high temperature reliability PRODUCT SUMMARY Part Number Vos Rps{on) lo IRF840 500V 0.859 8.0A IRF841 450V 0.850 8.0A ABSOLUTE MAXIMUM RATINGS 1.Gate 2.Drain 3. Source Characteristic Symbol IRF&40 IRF841 Unit Drain-Source Voltage (1) Voss 500 450 Vde Drain-Gate Voltage (Ras=1.0M )(1) VbGR 500 450 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25 C Ib 8.0 Adc Continuous Drain Current Tc=100 C Ip 5.0 Adc Drain Current - Pulsed (3) {om 32 Adc Gate Current - Pulsed Iam 41.5 Adc Single Pulsed Avalanche Energy (4) Eas 510 mJ Avalanche Current las 8.0 A Total Power Dissipation @ Tc=25 C p 125 Watts D Derate above 25 C 1.0 w/c Operating and Stora pe 9 a Tu, Tst4 -55 to +150 C Junction Temperature Range Maximum Lead Temp. for Soldering Te 300 C Purposes, 1/8" from case for 5 seconds Notes : (1) Ti=25C to 150C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (8) Repetitive rating : Pulse width limited by max. junction temperature (4) L=1.4mH, Vad=50V, Ra=250 , Starting Ti=25C 322 en FLECTRONICS Me 7964142 0024236 135 @N-CHANNEL IRF840/841 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions Drain-Source Breakdown Voltage BVpss | iRF840 500} - - V_ | Vas=0V, [p=250uA IRF841 450; - - V Vasith) | Gate Threshold Voltage 2.0 - 40 Vs | Vos=Vas, lo=250uA Iass Gate-Source Leakage Forward - - 100 | nA | Vas=20V less Gate-Source Leakage Reverse - - 1 +100] nA | Ves=-20V Ipss Zero Gate Voltage Drain Current - - 250 | #A | Vos=Max. Rating, Ves=0V - - | 1000] A | Vos=0.8 Max. Rating, Vas=0V, Tc=125C Ros(on) | Static Drain-Source On - - 0.85 Q | Ves=10V, ln=4.0A Resistance (2) Gfs Forward Transconductance (2) 4.0] 65 - U_ } Vos>10V, lo=4.0A Ciss Input Capacitance - | 1510) - pF Coss | Output Capacitance - 154 - pF | Vas=0V, Vos=25V, f=1.0MHz Cres Reverse Transfer Capacitance - 66 - pF tion) Turn-On Delay Time - 14 21 ns | Voo=0.5 BVopss, Ip=8.0A, Zo=9.10 tr Rise Time - 23 | 35 ns _| (MOSFET switching times are essentially tae) | Turn-Off Delay Time - 49 74 ns | independent of operating temperature) tt Fall Time - 20 30 ns Qg Total Gate Charge - - 74 | nC | Vas=10V, In=8.0A, Vos=0.8 Max. Rating (Gate-Source Plus Gate-Drain) (Gate charge is essentially independent of Qags Gate-Source Charge - 9.0 - nC | operating temperature) Qga Gate-Drain ("Miller*) Charge - | 27.0] - nc THERMAL RESISTANCE Symbol Characteristics All Units Remark Rtnuc Junction-to-Case MAX 1.0 KAW Rtncs | Case-to-Sink TYP 0.5 K/W | Mounting surface flat, smooth, and greased Rthua Junction-to-Ambient MAX 62.5 K/W | Free Air Operation Notes : (1) Ti=25C to 150C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature MB 7964142 0026237 O7) ELECTRONICSN-CHANNEL IRF840/841 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions Conti is Source Current Is on en mews - - 8.0 | A | Modified MOSFET D (Body Diode) symbol showing the A) Pulse Source Current integral reverse S s IsM | - - } 32 | A | P-Njunction rectifier (Body Diode) (3) Vsp Diode Forward Voltage (2) - - 2.0 V | Ty=25C, Is=8.0A, Vas=0V trr Reverse Recovery Time - | 460] 970 | ns | Ty=25C, IF=8.0A, diF/dt=100A/xS Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width< 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature a ~ z a w wo 2 a = = < < z < a & = s = 2 > 3 2 3 z 5 5 r} 0 20 40 60 80 1 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics OPERATION IN THIS AREA BY Rosion) Pulse Test a a g : $ $ = 5 w z c > > & z z < < g 5 Tco=25C 6 s T,=150C MAX. SINGLE PULSE 0 2 4 6 8 10 10 2 5 10 20 50 100 200 500 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area 324 en me 79b414e OOeses TOh ELECTRONICS1 N-CHANNEL IRF840/841 POWER MOSFETS Zynec(Rthac, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) gfs, TRANSCONDUCTACE (SIMENS) BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.5 00 Ty 1. Duty Factor. b=) u 0.02 Per Unit Base=Rpc=1.0 Deg. C/W. 3. Taw-Te=Pom Zeuc (t- 10% 2 5 5 107 2 5 1 10 t1. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration 80ys Pulse Test Vos boona Rosin mex ion, REVERSE DRAIN CURRENT (AMPERES) 4 Ip, ORAIN CURRENT (AMPERES) Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current Typical SourceDrain Diode Forward Voitage 25 Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) . 0 -40 40 120 40 0 40 1 160 Ty, JUNCTION TEMPERATURE {C} Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resi Vs. Temp @ 325 ELECTRONICS ME 7964142 0028239 944N-CHANNEL IRF840/841 POWER MOSFETS g Ves 8 & oe=0 3 wd f=1MHz 8 2 Ciss=Cgs-+Cgd, Cds SHORTED 5 3 g Cgs 2 < Coss=Cas+ = 800 Cgs+Cgd 2 6 eb 3 Coss Crss 0 10 20 0 40 50 0 20 40 60 80 100 Qe, TOTAL GATE CHARGE (nC) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-to-Source Voltage 1 a = r Ss a PULSE OF 2.04 QURATION e Zz 1 1 wi < T= 25C. a E learned 1 w g {HEATING EFFECT OF 2,03 g # 30 < E 3 a 25 & wi 4 oO ] =z 2 oa 5 z z Zz 4 = a = 05 g rd 0 5 10 16 25. 30 35 45 50 75 00 125 150 Ip, ORAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature Pp, POWER DISSIPATION (WATTS) 40 go 86100 120 140 (160 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve 326 ELECTRONICS MS 7964142 0028240 bbb