BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Units VCEO Collector-Emitter Voltage Parameter 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BSR17A 350 2.8 357 mW mW/C C/W 3 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 A, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector-Cutoff Current VCB = 30 V, TA = 150C 5.0 ICEX Collector-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 A nA IBEX Reverse Base Current VCE = 30 V, VEB = 3.0 V 50 nA 60 V IC = 1.0 mA, IE = 0 40 V IE = 10 A, IC = 0 6.0 V ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage* IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 0.65 300 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Transition Frequency Ccb Collector-Base Capacitance IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz 300 MHz Ceb hie Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz hoe Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40 S 35 ns 35 ns 4.0 pF 8.0 pF 1.0 10 k 100 400 SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time IC = 10 mA, IB1 = 1.0 mA, VEB = 0.5 V IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns 50 ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0 % Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) BSR17A NPN General Purpose Amplifier (continued) BSR17A NPN General Purpose Amplifier V CE = 5V 400 125 C 300 25 C 200 - 40 C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 = 10 - 40 C 25 C 0.6 125 C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.15 125 C 0.1 25 C 0.05 - 40 C 0.1 1 VCE = 5V 0.8 - 40 C 3 25 C 0.6 125 C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 = 10 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 5 4 3 C ibo 2 C obo 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 (continued) Typical Characteristics (continued) Noise Figure vs Source Resistance Noise Figure vs Frequency 12 I C = 1.0 mA R S = 200 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 A R S = 1.0 k 8 I C = 0.5 mA R S = 200 6 4 2 I C = 100 A, R S = 500 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA I C = 50 A 8 6 I C = 100 A 4 2 0 0.1 100 V CE = 40V I C = 10 mA 10 100 f - FREQUENCY (MHz) P D - POWER DISSIPATION (mW) - CURRENT GAIN (dB) fe h 350 - DEGREES 0 20 40 60 80 100 120 140 160 180 h fe 1 1000 300 250 SOT-23 200 150 100 50 0 0 Turn-On Time vs Collector Current I B1 = I B2 = Ic VCC = 40V 10 TIME (nS) 15V t r @ V CC = 3.0V 2.0V 10 1 10 I C - COLLECTOR CURRENT (mA) 125 150 100 I B1 = I B2 = Ic 10 T J = 25C T J = 125C 10 t d @ VCB = 0V 5 50 75 100 TEMPERATURE ( o C) Rise Time vs Collector Current 40V 100 25 500 t r - RISE TIME (ns) 500 100 Power Dissipation vs Ambient Temperature Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 1 10 R S - SOURCE RESISTANCE ( k ) 100 5 1 10 I C - COLLECTOR CURRENT (mA) 100 BSR17A NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current Fall Time vs Collector Current 500 Ic I B1 = I B2 = I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 T J = 25C 100 T J = 125C 10 5 BSR17A NPN General Purpose Amplifier T J = 125C Ic 10 VCC = 40V 100 T J = 25C 10 1 10 I C - COLLECTOR CURRENT (mA) 100 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Test Circuits 3.0 V 275 300 ns 10.6 V Duty Cycle = 2% 10 K 0 C1 < 4.0 pF - 0.5 V < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 s t1 10.9 V 275 Duty Cycle = 2% 10 K 0 C1 < 4.0 pF 1N916 - 9.1 V < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G