3
BSR17A
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSR17A
PDTotal De vice Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junctio n to Ambient 357 °C/W
Symbol Parameter Value Units
VCEO Collector-Emi t t er Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
C
E
B
SOT-23
Mark: U92
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
BSR17A
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Colle ct or-Emitter Breakdown
Voltage IC = 10 µA, IB = 0 60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 mA, IE = 0 40 V
V(BR)EBO Emitter-Bas e Breakdown V ol tage IE = 10 µA, IC = 0 6.0 V
ICBO Collect or-Cutoff Current VCB = 30 V, TA = 150°C5.0 µA
ICEX Collect or-Cutoff Current VCE = 30 V, VEB = 3. 0 V 50 nA
IBEX Reverse Base Current VCE = 30 V, VEB = 3. 0 V 50 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
30
300
VCE(sat)Collector-Emitter Sa turatio n Voltage* IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.2
0.3 V
V
VBE(sat)Base-Emitter Saturation Vo ltage* IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
SMALL SIGNAL CHARACTERISTICS
fTTransition Frequency IC = 20 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF
Ceb Emitter-Base Capa citance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF
hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10 kΩ
hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
hoe Output Adm i ttance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40
µ
S
SWITCHING CHARACTERISTICS
tdDelay Time IC = 10 m A, IB1 = 1.0 mA,
VEB = 0.5 V 35 ns
trRise Time 35 ns
tsStorage Time IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns
tfFa ll Time 50 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0 %
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
BSR17A
NPN General Purpose Amplifier
(continued)
3
BSR17A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
Colle ctor-Emitter S aturation
Voltag e vs Collect o r Cu rren t
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
Collect or- Cut of f Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typ ical Pu lsed C urr ent Gain
vs Col lector Cur ren t
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPI CA L PULSED CU RR ENT GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIG URE (dB)
V = 5.0V
CE
I = 100 µA, R = 500 Ω
CS
I = 1.0 m A
R = 200Ω
C
S
I = 50 µA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩ
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 µA
C
I = 1.0 mA
C
S
I = 50 µA
C
I = 5.0 mA
C
θ - DEGREES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQU ENCY (MHz)
h - CURRENT GAI N (dB)
θ
V = 40 V
CE
I = 10 mA
C
hfe
fe
Turn-On Time vs Collector Cur ren t
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2 Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
Rise Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2 Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
BSR17A
NPN General Purpose Amplifier
(continued)
3
BSR17A
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLL E CTOR CURREN T (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2 Ic
10
S
T = 125°C
T = 25°C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2 Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
Test Circuits
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
t1
C1 <<
<<
< 4.0 pF
Duty Cycle ==
==
= 2%
Duty Cycle ==
==
= 2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns 10.6 V
10 < <
< <
< t1 <<
<<
< 500 µµ
µµ
µs 10.9 V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
C1 <<
<<
< 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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