5–221
MOC8111
PHOTOTRANSISTOR
NO BASE CONNECTION OPTOCOUPLER
Electrical Characteristics
(T
A
=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
F
1.15 1.5 V I
F
=10 mA
Reverse Leakage
Current I
R
0.05 10
µ
AV
R
=6 V
Capacitance C
J
25 pF V=0, f=1 MHz
Detector
Collector-Emitter
Breakdown
Voltage BV
CEO
30 V I
C
=1
µ
A
Collector-Emitter
Leakage Current I
CEO
150nAV
CE
=10 V
Emitter-Collector
Breakdown
Voltage
V
ECO
7VI
E
=10
µ
A
Collector-Emitter
Capacitance C
CE
7pFV
CE
=0 V, f=1 MHz
Package
Collector Satura-
tion Voltage V
CESAT
0.15 0.4 V I
C
=500
µ
A
I
F
=10 mA
Output Collector
Current I
C
2 5 mA I
F
=10 mA
V
CE
=10 V
Turn On Time
T
ON 7.5 20
µ
sV
CC
=10 V
R
L
=100
Ω
,
I
C
=2 mA,
see Figure 1
Turn Off Time
T
OFF 5.7 20
µ
s
Package Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID.
6
5
4
12
3
18° typ.
.300 (7.62)
.347 (8.82)
4°
typ.
FEATURES
• Current Transfer Ratio 20% Min.
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
DESCRIPTION
The MOC8111 is an optocoupler consisting of a
Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP 6 pin package.
The coupling device is suitable for signal trans-
mission between two electrically separated cir-
cuits. The potential difference between the
circuits to be coupled is not allowed to exceed
the maximum permissible reference voltages.
In contrast to the IL1 the base terminal is not con-
nected, resulting in a substantially impr oved com-
mon-mode interference immunity.
Maximum Ratings
(T
A
=25
°
C)
Emitter
Reverse Voltage .............................................. 6 V
DC Forward Current ................................... 60 mA
Surge Forward Current (t
≤
10
µ
s).................. 2.5 A
Total Power Dissipation............................ 100 mW
Detector
Collector-Emitter Breakdown Voltage............ 30 V
Collector Current .......................................50 mA
Collector Current (t
≤
1 ms) ........................ 150 mA
Total Power Dissipation............................ 150 mW
Package
Isolation Test Voltage between
Emitter and Detector, Refer to
Standard Climate 23/50
DIN 50014....................................5300 VAC
RMS
Creepage ...................................................
≥
7 mm
Clearance...................................................
≥
7 mm
Isolation Thickness between
Emitter and Detector............................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 ..............175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C.................................10
12
Ω
V
IO
=500 V, T
A
=100
°
C...............................10
11
Ω
Storage Temperature Range ..... –55
°
C to +150
°
C
Ambient Temperature Range..... –55
°
C to +100
°
C
Soldering Temperature (max. 10 s,
dip soldering distance to
seating plane
≥
1.5 mm)...........................260
°
C
NE
W
V
DE
5–222
MOC8050
Figure 1. Switching times
VCC=10 V
IC RL=100 Ω
OutputInput
Input current adjusted
to achieve IC=2 mA
Test Circuit
10%
90%
Waveforms
Input Pulse
Output Pulse
ton toff
trtf
