IRF840/FI
IRF841/FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
■TYPICAL RDS(on) = 0.74 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWERSUPPLIES (SMPS)
■CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
IRF840
IRF840FI 500 V
500 V <0.85Ω
<0.85Ω8A
4.5 A
IRF841
IRF841FI 450 V
450 V <0.85Ω
<0.85Ω8A
4.5 A
123
TO-220 ISOWATT220
May 1993
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF
840 841 840FI 841FI
VDS Drain-source Voltage (VGS = 0) 500 450 500 450 V
VDGR Drain- gate Voltage (RGS =20kΩ) 500 450 500 450 V
VGS Gate-source Voltage ±20 V
IDDrain Current (cont.) at Tc=25o
C884.54.5A
I
D
Drain Current (cont.) at Tc= 100 oC 5.1 5.1 2.8 2.8 A
IDM(•) Drain Current (pulsed) 32 32 32 32 A
Ptot Total Dissipation at Tc=25o
C 125 40 W
Derating Factor 1 0.32 W/oC
VISO Insulation Withstand Voltage (DC) 2000
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulsewidth limited by safe operating area
123
1/10
THERMAL DATA
TO-220 ISOWATT220
Rthj-case Thermal Resistance Junction-case Max 1 3.12 oC/W
Rthj-amb
Rthc-s
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 8A
E
AS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =25V) 510 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tjmax, δ <1%) 13 mJ
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc= 100 oC, pulse width limited by Tjmax, δ <1%) 5.1 A
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS =0
for IRF840/840FI
for IRF841/841FI 500
450 V
V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS = Max Rating x 0.8 Tc=125o
C250
1000 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 20 V ±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID=250µA234V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D=4.4A 0.74 0.85 Ω
I
D(on) On State Drain Current VDS >I
D(on) xR
DS(on)max VGS =10V 8 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=4.4A 4.9 6 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 1100
190
80
1500
240
110
pF
pF
pF
IRF840/FI - IRF841/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =200V I
D=4A
R
i=4.7 Ω
(see test circuit)
40
35
80
20
50
43
100
25
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=8A V
GS =10V
V
DD = Max Rating x 0.8
(see test circuit)
75
9
39
95 nC
nC
nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
8
32 A
A
VSD (∗) Forward On Voltage ISD =8A V
GS =0 2 V
t
rr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 8 A di/dt = 100 A/µs
VDD = 100 V Tj= 150 oC700
12
ns
µC
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
IRF840/FI - IRF841/FI
3/10
Thermal Impedance for TO-220
Derating Curve for TO-220
Output Characteristics
Thermal Impedance for ISOWATT220
Derating Curve for ISOWATT220
Output Characteristics
IRF840/FI - IRF841/FI
4/10
Transfer Characteristics Transconductance
Static Drain-source On Resistance Maximum Drain Current vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
IRF840/FI - IRF841/FI
5/10
Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms
IRF840/FI - IRF841/FI
6/10
Gate Charge Test CircuitSwitching Time Test Circuit
IRF840/FI - IRF841/FI
7/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
IRF840/FI - IRF841/FI
8/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
Ø
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
IRF840/FI - IRF841/FI
9/10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementof patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use ascriticalcomponentsin life supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong -Italy -Japan - Korea - Malaysia -Malta - Morocco- The Netherlands -
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IRF840/FI - IRF841/FI
10/10
