2003. 2. 25 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC846/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
High Voltage : BC846 VCEO=65V.
For Complementary With PNP Type BC856/857/858.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
TYPE BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C
MARK 1A 1B 1E 1F 1G 1J 1K 1L
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC846
VCBO
80
VBC847 50
BC848 30
Collector-Emitter
Voltage
BC846
VCEO
65
VBC847 45
BC848 30
Emitter-Base Voltage
BC846
VEBO
6
VBC847 6
BC848 5
Collector Current IC100 mA
Emitter Current IE-100 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
MARK SPEC
Type Name
Marking
Lot No.
PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
2003. 2. 25 2/3
BC846/7/8
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
NOTE : According to the value of hFE the BC846, BC847, BC848 are classified as follows.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
DC Current Gain (Note)
BC846
hFE VCE=5V, IC=2mA
110 - 450
BC847 110 - 800
BC848 110 - 800
Collector-Emitter Saturation Voltage
VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25
V
VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6
Base-Emitter Saturation Voltage
VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 -
V
VBE(sat) 2 IC=100mA, IB=5mA - 0.9 -
Base-Emitter Voltage
VBE(ON1) VCE=5V, IC=2mA 0.58 - 0.7 V
VBE(ON2) VCE=5V, IC=10mA - - 0.75 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA
Rg=10k , f=1kHz - 1.0 10 dB
CLASSIFICATION A B C
hFE
BC846 110 220 200 450 -
BC847 110 220 200 450 420 800
BC848 110 220 200 450 420 800
2003. 2. 25 3/3
BC846/7/8
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
COLLECTOR CURRENT I (mA)
C
0.1
0.2
BASE-EMITTER VOLTAGE V (V)
BE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V I - V
COLLECTOR-BASE VOLTAGE V (V)
CAPACITANCE C (pF)
ob
10
1
13
20
CB
10 30
C - V
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
13
FE
10 30
C
h - I
4 8 12 16 20
20
40
60
80
100
I =400µA
B
I =350µA
B
I =50µA
B
I =100µA
B
I =150µA
B
I =200µA
B
I =250µA
B
I =300µA
B
CBE
0.4 0.6 0.8 1.0
0.3
0.5
1
3
5
10
30
50
100
V =5V
CE
FE C
100 300 1k
10
30
50
100
300
500
1k
SATURATION VOLTAGE
10
COLLECTOR CURRENT I (mA)
1
10
30
100
330030 100
C
1
k
BE(sat)
300
1k
V , V - I
BE(sat) CCE(sat)
V , V (V)
CE(sat)
3k
10k I /I =20
CB
VBE(sat)
VCE(sat)
ob CB
100
3
5
f=1MHz
I =0
E
V =5V
CE