SEMICONDUCTOR BC846/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B L L FEATURES 2 H A P RATING BC847 Collector-Emitter Emitter-Base Voltage VCBO 50 BC848 30 BC846 65 BC847 Voltage 80 VCEO 45 BC848 30 BC846 6 BC847 VEBO 6 BC848 V 3. COLLECTOR V SOT-23 V 5 IC 100 mA Emitter Current IE -100 mA PC * 350 mW Tj 150 Tstg -55 150 Junction Temperature Storage Temperature Range 1. EMITTER 2. BASE Collector Current Collector Power Dissipation MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K BC846 UNIT J SYMBOL P N CHARACTERISTIC Collector-Base Voltage 1 ) C MAXIMUM RATING (Ta=25 3 G For Complementary With PNP Type BC856/857/858. D High Voltage : BC846 VCEO=65V. DIM A B C D E G H J K L M N P PC* : Package Mounted On 99.5% Alumina 10 8 Marking Lot No. Type Name 0.6mm. MARK SPEC TYPE BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C MARK 1A 1B 1E 1F 1G 1J 1K 1L 2003. 2. 25 Revision No : 2 1/3 BC846/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=30V, IE=0 BC846 DC Current Gain (Note) BC847 hFE VCE=5V, IC=2mA BC848 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage TYP. MAX. UNIT - - 15 nA 110 - 450 110 - 800 110 - 800 VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6 VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 - VBE(sat) 2 IC=100mA, IB=5mA - 0.9 - VBE(ON1) VCE=5V, IC=2mA 0.58 - 0.7 V VBE(ON2) VCE=5V, IC=10mA - - 0.75 V VCE=5V, IC=10mA, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF - 1.0 10 dB fT Transition Frequency MIN. Collector Output Capacitance Cob Noise Figure NF VCE=6V, IC=0.1mA Rg=10k , f=1kHz V V NOTE : According to the value of hFE the BC846, BC847, BC848 are classified as follows. CLASSIFICATION hFE 2003. 2. 25 A B C BC846 110 220 200 450 BC847 110 220 200 450 420 800 BC848 110 220 200 450 420 800 Revision No : 2 - 2/3 BC846/7/8 - V CE I C - V BE 100 I B =400A I B =350A I B =300A 80 I B =250A 60 I B =200A I B =150A 40 I B =100A 20 0 I B =50A 0 1k 4 8 12 16 20 100 VCE =5V 50 30 10 5 3 1 0.5 0.3 0.1 0.4 0.2 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C VBE(sat) , V CE(sat) - I 10k V CE =5V 500 SATURATION VOLTAGE V BE(sat) , VCE(sat) (V) DC CURRENT GAIN h FE C COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I 300 100 50 30 10 C I C /I B =20 3k 1k V BE(sat) 300 100 V CE(sat) 30 10 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) C ob - V CB CAPACITANCE C ob (pF) 20 f=1MHz I E =0 10 5 3 1 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CB (V) 2003. 2. 25 Revision No : 2 3/3