BSP50T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1997 Apr 22

1999 Apr 23

DISCRETE SEMICONDUCTORS

BSP50; BSP51; BSP52

NPN Darlington transistors

handbook, halfpage

M3D087

1999 Apr 23 2

NXP Semiconductors Product data sheet

NPN Darlington transistors BSP50; BSP51; BSP52

FEATURES

•High current (max. 1 A)

•Low voltage (max. 80 V)

•Integrated diode and resis tor .

APPLICATIONS

•Industrial high gain amplification .

DESCRIPTION

NPN Darlington transistor in a SOT223 plastic package.

PNP complements: BSP60, BSP61 and BSP62.

PINNING

PIN DESCRIPTION

1base

2,4 collector

3emitter

Fig.1 Simplified outline (SOT223) and symbol.

123

MAM265

Top view

2, 4

LIMITING VALUES

In accordance with th e Absolute Ma ximum Ratin g System (IEC 134).

Note

1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BSP50 −60 V

BSP51 −80 V

BSP52 −90 V

VCES collector-emitter voltage VBE = 0

BSP50 −45 V

BSP51 −60 V

BSP52 −80 V

VEBO emitter-base vo ltage open collector −5 V

ICcollector current (DC) −1 A

ICM peak collector current −2 A

IBbase current (DC) −100 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.25 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 23 3

NXP Semiconductors Pr oduct data shee t

NPN Darlington transistors BSP50; BSP51; BSP52

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated

Handbook“.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 96 K/W

Rth j-s thermal resistance from junction to solder point 17 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES collector cut-off current

BSP50 VBE = 0; VCE = 45 V −−50 nA

BSP51 VBE = 0; VCE = 60 V −−50 nA

BSP52 VBE = 0; VCE = 80 V −−50 nA

IEBO emitter cut-off current IC = 0; VEB = 4 V −−50 nA

hFE DC current gain VCE = 10 V; note 1; see Fig.2

IC = 150 mA 1 000 − −

IC = 500 mA 2 000 − −

VCEsat collector-emitter saturation

voltage IC = 500 mA; IB = 0.5 mA −−1.3 V

IC = 500 mA; IB = 0.5 mA;

Tj = 150 °C−−1.3 V

VBEsat base-emitt er satura tion

voltage IC = 500 mA; IB = 0.5 mA −−1.9 V

fTtransition freque ncy IC = 500 mA; VCE = 5 V; f = 100 MHz −200 −MHz

Switching times (between 10% and 90% levels); see Fig.3

ton turn-on time ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA −500 −ns

toff turn-off time −1 300 −ns

1999 Apr 23 4

NXP Semiconductors Pr oduct data shee t

NPN Darlington transistors BSP50; BSP51; BSP52

Fig.2 DC current gain; typical values.

handbook, full pagewidth

5000

1000

2000

3000

4000

MGD838

−1

1IC (mA)

hFE

10 10

VCE = 10 V.

Fig.3 Test circuit for switching times.

handbook, full pagewidth

DUT

MLB826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.

R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.

VBB = −1.8 V; VCC = 10.7 V.

Oscilloscope: input impedance Zi = 50 Ω.

1999 Apr 23 5

NXP Semiconductors Pr oduct data shee t

NPN Darlington transistors BSP50; BSP51; BSP52

PACKAGE OUTLINE

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22

1999 Apr 23 6

NXP Semiconductors Product data sheet

NPN Darlington transistors BSP50; BSP51; BSP52

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or completing a design.

2. The product s tatus of device(s) described in this document may ha ve changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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specifications and product descriptions, at any time and

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other co nditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document does not form p art of any quotation or co nt ra ct, is believed to be accurate a nd reliable and may be change d

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline

drawings which were updated to the latest version.

Printed in The Netherlands 115002/00/03/pp7 Date of releas e: 1999 Apr 23 Document orde r number: 9397 750 05809