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Is Now Part of
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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RGP10A-RGP10M
RPG10A - RPG10M, Rev. C2001 Fairchild Semiconductor Corporation
RGP10A - RGP10M
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
1.0 ampere operation at TA = 55°C
with no thermal runaway.
High temperature metallurgically
bonded construction.
Glass passivated cavity-free junction.
Typical IR less than 1µA.
Fast switching for high efficiency.
Symbol
Parameter
Value
Units
10A 10B 10D 10G 10J 10K 10M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
IF(AV) Average Rectifi ed Forward Current,
.375 " lead length @ TL = 55°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperat ure -65 to +175 °C
DO-41
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Device
Units
10A 10B 10D 10G 10J 10K 10M
VF Forward Voltage @ 1.0 A 1.3 V
trr Reverse Recovery Tim e
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 150 250 500 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 150°C 5.0
200 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 15 pF
Symbol
Parameter
Value
Units
PD Power Dissipation 3.0 W
RθJA Thermal Resistance, Junction to Ambient 50 °C/W
Thermal Characteristics
RPG10A - RPG10M, Rev. C
RGP10A-RGP10M
2001 Fairchild Semiconductor Corporation
Typical Characteristics
1 2 5 10 20 50 100
0
5
10
15
20
25
30
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
Forward Voltage, VF [V]
Forward Current, IF [A]
Pu lse Wi d th = 300µ
µµ
µs
2% Duty Cycle
T = 25 C
º
A
1 2 5 10 20 50 100
1
2
5
10
20
50
100
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
Pulse
Generator
(Note 2)
50
NONINDUCTIVE 50
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
NONINDUCTIVE
50V
(approx)
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 1 0 ns/ cm
0 20406080100120140
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
Lead Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
.375 " (9.0 mm) L EAD
LENGTH S
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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SyncFET™
TinyLogic™
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UHC™
UltraFET
STAR*POWER is used under license
VCX™
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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