Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
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FEATURES
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Baseplate
• High Thermal Cycling Capability
APPLICATIONS
• High Power Inverters
• Motor Controllers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM1200FSS12-A000 is a single switch 1200V,
n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
full 10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200FSS12-A000
Note: When ordering, please use the whole part number.
.
KEY PARAMETERS
VCES 1200V
VCE (sat)* (typ) 2.2V
IC(max) 1200A
IC(PK) (max) 2400A
*(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Single switch circuit diagram
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
DIM1200FSS12-A000
Single Switch IGBT Module
DS5834-1.1 September 2005 (LN24178)
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 2/9
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol Parameter Test Conditions Max. Units
VCES Collector-emitter voltage VGE = 0V 1200 V
VGES Gate-emitter voltage ±20 V
ICContinuous collector current Tcase = 85° C 1200 A
IC(PK) Peak collector current 1ms, Tcase =115° C 2400 A
Pmax Max. transistor power dissipation Tcase = 25° C, T j = 150° C 10400 W
I2t Diode I2t value (IGBT arm) VR = 0, tP = 10ms, Tvj = 125° C 400 kA 2S
Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/9
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THERMAL AND MECHANICAL RATINGS
Internal insulation material: Al2O3
Baseplate material: Copper
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
Symbol Parameter Test Conditions Min. Typ. Max. Units
Rth(j-c) Thermal resistance - transistor Continuous dissipation –
junction to case
- - 12 ° C/kW
Rth(j-c) Thermal resistance - diode Continuous dissipation –
junction to case
- - 20 ° C/kW
Rth(c-h) Thermal resistance – case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
- - 8 ° C/kW
TjJunction temperature Transistor - - 150 ° C
Diode - - 125 ° C
Tstg Storage temperature range - -40 - 125 ° C
-Screw torque Mounting – M6 - - 5 Nm
Electrical connections – M4 - - 2 Nm
Electrical connections – M8 - - 10 Nm
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 4/9
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol Parameter Test Conditions Min. Typ. Max. Units
Ices Collector cut-off current VGE = 0V, VCE = VCES - - 1.5 mA
VGE = 0V, VCE = VCES, Tcase = 125° C - - 38 mA
Ices Gate leakage current VGE = ±20V, VCE = 0V - - 6 µA
VGE(TH) Gate threshold voltage IC = 60mA, VGE = VCE 4.5 5.5 6.5 V
VCE(sat)Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 2.2 2.8 V
VGE = 15V, IC = 1200A, Tcase = 125° C - 2.6 3.3 V
IFDiode forward current DC - - 1200 A
IFM Diode maximum forward current tp = 1ms - - 2400 A
VFDiode forward voltage IF = 1200A - 1.9 2.2 V
IF = 1200A, Tcase = 125° C - 1.8 2.1 V
Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 135 - nF
LMModule inductance - - 15 - nH
RINT Internal transistor resistance - - 0.27 - mΩ
SCData Short circuit. Isc Tj = 125° C, Vcc = 900V, I1- 8250 - A
tp ≤ 10µs,
VCE(max) = VCES - L*×di/dt I2- 6750 - A
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + LM
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/9
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol Parameter Test Conditions Min. Typ. Max. Units
td(off) Turn-off delay time IC = 1200A - 1250 - ns
tfFall time VGE = ±15V - 180 - ns
EOFF Turn-off energy loss VCE = 600V - 160 - mJ
td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω- 250 - ns
trRise time L ∼ 100nH - 200 - ns
EOTurn-on energy loss - 80 - mJ
QgGate charge - 12 - µC
Qrr Diode reverse recovery charge IF = 1200A, VR = 600V, - 120 - µC
Irr Diode reverse current dlF/dt = 6200A/µs - 570 - A
EREC Diode reverse recovery energy - 60 - mJ
Tcase = 125° C unless stated otherwise.
Symbol Parameter Test Conditions Min. Typ. Max. Units
td(off) Turn-off delay time IC = 1200A - 1380 - ns
tfFall time VGE = ±15V - 200 - ns
EOFF Turn-off energy loss VCE = 600V - 260 - mJ
td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω- 350 - ns
trRise time L ∼ 100nH - 220 - ns
EON Turn-on energy loss - 140 - mJ
Qrr Diode reverse recovery charge IF = 1200A, VR = 600V, - 240 - µC
Irr Diode reverse current dlF/dt = 5700A/µs - 680 - A
EREC Diode reverse recovery energy - 110 - mJ
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 6/9
www.dynexsemi.com
Fig.3 Typical output characteristics Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/9
www.dynexsemi.com
Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area
0.1
1
10
100
0.001 0.01 0.1 1 10
Pulse width, tp - (s)
Transient Thermal impedance, Zth(j-c) - (°C/kW)
Z(t) IGBT
Z(t) Antiparallel Diode
i 1 2 3 4
Ri IGBT °C/kW 0.292 1.615 6.090 4.101
τ
i IGBT ms 0.109 3.136 45.600 143.022
Ri DIODE °C/kW 0.467 2.633 7.733 9.379
τ
i DIODE ms 0.099 3.206 38.583 113.969
Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 8/9
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1600g
Module outline type code: F
SEMICONDUCTOR
DIM1200FSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 9/9
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as
follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
