Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 750 mA
IDM TC= 25°C, pulse width limited by TJM 3A
IAR 1.0 A
EAR TC= 25°C5mJ
EAS TC= 25°C 100 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 3 V/ns
TJ≤ 150°C, RG = 47 Ω
PDTC= 25°C40W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-220 4 g
TO-252 0.8 g
TO-263 3 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
High V oltage MOSFET
G = Gate, D = Drain,
S = Source, TAB = Drain
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 800 V
VGS(th) VDS = VGS, ID = 25 µA 2.5 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C 500 µA
RDS(on) VGS = 10 V, ID = 500 mA 9.5 11 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
!International standard packages
!High voltage, Low RDS (on) HDMOSTM
process
!Rugged polysilicon gate cell structure
!Fast switching times
Applications
!Switch-mode and resonant-mode
power supplies
!Flyback inverters
!DC choppers
!High frequency matching
Advantages
!Space savings
!High power density
DS98822C(11/03)
GDS
TO-220AB (IXTP)
© 2003 IXYS All rights reserved
GS
TO-263 AA (IXTA)
D (TAB)
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 1N80
IXTP 1N80
IXTY 1N80
VDSS = 800 V
ID25 = 750 mA
RDS(on) = 11 ΩΩ
ΩΩ
Ω
Preliminary Data
TO-252 AA (IXTY)
GSD (TAB)
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 1N80 IXTA 1N80
IXTY 1N80
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 500 mA, pulse test 0.7 0.8 S
Ciss 220 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 23 pF
Crss 4pF
td(on) 11 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 19 ns
td(off) RG= 47Ω, (External) 40 ns
tf28 ns
QG(on) 8.5 nC
QGS VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 2.5 nC
QGD 4.5 nC
RthJC 3.1 K/W
RthCK (IXTP) 0.50 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 750 mA
ISM Repetitive; pulse width limited by TJM 3A
VSD IF = IS, VGS = 0 V, 1.8 2 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 710 ns
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
TO-220 AD Dimensions
TO-263 AA Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
TO-252 AA Outline
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