Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC846A,B 1
2
1
2
33
SOT-23
Rating Symbol Value Unit
Characteristic
Collector-Emitter Voltage VCEO 65 Vdc
Collector-Base Voltage VCBO 80 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC100 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD300
2.4 mW
mW / oC
Thermal Resistance Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Collector-Emitter Breakdowe Voltage
( IC=10 uAdc, VEB=0 )
Collector-Base Breakdowe Voltage
( IC=10 uAdc )
Collector-Emitter Breakdowe Voltage
( IC=10mAdc )
Emitter-Base Breakdowe Voltage
( IE=1.0 uA )
Symbol
V(BR)CES
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Min.
80
65
80
6.0
-
-
Max.
-
-
-
-
15
5.0
Typ.
-
-
-
-
-
-
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
Collector Cutoff Current
( VCB=30 V )
( VCB=30 V, TA = 150oC )
BC846A = 1A,BC846B = 1B
-55 to +150 oCTJ,TSTG
Zowie Technology CorporationREV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology Corporation
Characteristic
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
ON CHARACTERISTICS
DC Current Gain
( IC= 10 uA, VCE= 5.0 V )
( IC= 2.0 mA, VCE= 5.0 V )
BC846A
BC846B
BC846A
BC846B
Collector-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
Base-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= 10 mA, VCE= 5.0 V, f=100 MHZ )
Output Capacitance
( VCB= 10 V, f=1.0 MHZ )
Noise Figure
( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ)
Symbol
HFE
VCE(sat)
VBE(sat)
fT
Cobo
NF
Unit
-
V
V
MHZ
pF
dB
Min.
-
-
110
200
-
-
-
-
100
-
-
Max.
-
-
220
450
0.25
0.60
-
-
-
4.5
10
Typ.
90
150
180
290
-
-
0.7
0.9
Base-Emitter Voltage
( IC= 2.0 mA, VCE= 5.0V )
( IC= 10 mA, VCE= 5.0V ) VBE(on) mV
580
-700
770
660
-
-
-
-
Zowie Technology CorporationREV. : 0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation BC846A,B
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT ( mA )
Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient
IC, COLLECTOR CURRENT ( mA )
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE ( VOLTS )
IB, BASE CURRENT ( mA )
VCE, COLLECTOR EMITTER VOLTAGE ( V )
IC, COLLECTOR CURRENT ( mA )
Figure 5. Capacitances
VR, REVERSE VOLTAGE ( VOLTS )
C, CAPACITANCE ( pF )
Figure 6. Current-Gain-Bandwidth Product
IC, COLLECTOR CURRENT ( mA )
tT, CURRENT-GAIN-BANDWIDTH PRODUCT
Figure 2. "Saturation" and "On" Voltage
2.0
0.2 0.5 1.0 10 20 50
0.2 100
2.0 5.0 200
1.5
1.0
0.8
0.6
0.4
0.3
TA= 25oC
TA= 25oC
TA= 25oC
TA= 25oCTA= 25oC
-55oC to +125oC
VCE = 10 V
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
VBE(SAT) @ IC/IB = 10
VCE(SAT) @ IC/IB = 10
VBE(on) @ VCE = 10 V
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
IC = 10 mA
IC = 20 mA
IC = 50 mA
IC = 100 mA
IC = 200 mA
1.6
1.2
2.0
2.8
2.4
0.2 1.0 10 100
1.0
VB, TEMPERATURE COEFFICIENT (mV / oC)
40
0.1 0.2 0.5 10 20 50
2.0 1.0 5.0 100
20
10
6.0
4.0
2.0
Cib
Cob
600
500
20
100
200
50
1.0 10 50 1005.00
VCE = 5 V
