Zowie Technology Corporation General Purpose Transistor NPN Silicon COLLECTOR 3 3 BC846A,B BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 65 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 100 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic (1) Total Device Dissipation FR-5 Board o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient (2) Total Device Dissipation Alumina Substrate, o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C DEVICE MARKING BC846A = 1A,BC846B = 1B o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Typ. Max. Unit Collector-Emitter Breakdowe Voltage ( IC=10mAdc ) V(BR)CEO 65 - - Vdc Collector-Emitter Breakdowe Voltage ( IC=10 uAdc, VEB=0 ) V(BR)CES 80 - - Vdc Collector-Base Breakdowe Voltage ( IC=10 uAdc ) V(BR)CBO 80 - - Vdc Emitter-Base Breakdowe Voltage ( IE=1.0 uA ) V(BR)EBO 6.0 - - Vdc ICBO - - 15 5.0 nAdc uAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. REV. : 0 Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Symbol Characteristic Min. Typ. Max. 110 200 90 150 180 290 220 450 Unit ON CHARACTERISTICS DC Current Gain ( IC= 10 uA, VCE= 5.0 V ) ( IC= 2.0 mA, VCE= 5.0 V ) BC846A BC846B BC846A BC846B HFE - Collector-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) VCE(sat) - - 0.25 0.60 V Base-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) VBE(sat) - 0.7 0.9 - V Base-Emitter Voltage ( IC= 2.0 mA, VCE= 5.0V ) ( IC= 10 mA, VCE= 5.0V ) VBE(on) 580 - 660 - 700 770 mV fT 100 - - MHZ Cobo - - 4.5 pF NF - - 10 dB SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= 10 mA, VCE= 5.0 V, f=100 MHZ ) Output Capacitance ( VCB= 10 V, f=1.0 MHZ ) Noise Figure ( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ) REV. : 0 Zowie Technology Corporation 2.0 1.0 1.5 0.9 VCE = 10 V o TA= 25 C o TA= 25 C 0.8 1.0 0.8 0.6 0.4 0.3 VBE(SAT) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 VCE(SAT) @ IC/IB = 10 0.1 0.2 0.2 0 0.5 1.0 2.0 5.0 10 50 20 100 200 0.2 0.3 0.5 0.7 1.0 50 70 100 IC, COLLECTOR CURRENT ( mA ) TEMPERATURE COEFFICIENT (mV / C) o IC = 200 mA IC = 50 mA IC = 20 mA IC = 10 mA IC = 100 mA 1.2 1.0 0.8 o 1.6 2.0 2.4 2.8 VB, 0.4 o -55 C to +125 C 1.2 0 0.02 0.1 10 1.0 20 0.2 IC, COLLECTOR CURRENT ( mA ) tT, CURRENT-GAIN-BANDWIDTH PRODUCT o TA= 25 C 20 Cib 10 6.0 2.0 0.1 Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE ( VOLTS ) Figure 5. Capacitances 100 Figure 4. Base-Emitter Temperature Coefficient 40 4.0 10 1.0 IB, BASE CURRENT ( mA ) Figure 3. Collector Saturation Region C, CAPACITANCE ( pF ) 20 30 Figure 2. "Saturation" and "On" Voltage o REV. : 0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) TA= 25 C 1.6 0.1 Figure 1. Normalized DC Current Gain 2.0 VCE, COLLECTOR EMITTER VOLTAGE ( V ) BC846A,B V, VOLTAGE ( VOLTS ) hFE, NORMALIZED DC CURRENT GAIN Zowie Technology Corporation 50 100 600 VCE = 5 V o TA= 25 C 500 200 100 50 20 0 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT ( mA ) Figure 6. Current-Gain-Bandwidth Product Zowie Technology Corporation