DS30059 Rev. 11 - 2 1 of 3 MMBT3906
www.diodes.com ã Diodes Incorporated
MMBT3906
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMBT3904)
·Ideal for Medium Power Amplification and Switching
·Available in Lead Free/RoHS Compliant Version
(Note 2)
Characteristic Symbol MMBT3906 Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC-200 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj, TSTG -55 to +150 °C
Features
Maximum Ratings @ TA = 25°C unless otherwise specified
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish annealed over Alloy 42 leadframe). Please see
Ordering Information, Note 5, on Page 2
·Marking (See Page 2): K3N
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
SPICE MODEL: MMBT3906
DS30059 Rev. 11 - 2 2 of 3 MMBT3906
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO -40 ¾VIC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾VIC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -10mA, IC = 0
Collector Cutoff Current ICEX ¾-50 nA VCE = -30V, VEB(OFF) = -3.0V
ICBO ¾-50 nA VCB = -30V, IE = 0
Base Cutoff Current IBL ¾-50 nA VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
60
80
100
60
30
¾
¾
300
¾
¾
¾
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.25
-0.40 VIC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(SAT) -0.65
¾
-0.85
-0.95 VIC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ¾10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 2.0 12 kW
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 10 x 10-4
Small Signal Current Gain hfe 100 400 ¾
Output Admittance hoe 3.0 60 mS
Current Gain-Bandwidth Product fT250 ¾MHz VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure NF ¾4.0 dB VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td¾35 ns VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time tr¾35 ns
Storage Time ts¾225 ns VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time tf¾75 ns
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT3906-7-F.
K3N
YM
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Marking Information
Ordering Information
Device Packaging Shipping
MMBT3906 -7 SOT-23 3000/Tape & Reel
Date Code Key
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 123456789OND
(Note 4)
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPRSTUVW
DS30059 Rev. 11 - 2 3 of 3 MMBT3906
www.diodes.com
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
1
100
10
0.1 110 100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
f = 1MHz
Cibo
Cobo
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.01
0.1
10
1
110 100 1000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
IC
IB= 10
0.1
1
10
0.1 110 100 1000
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
IC
IB= 10
T = 25°C
A
T = 75°C
A
T = -25°C
A
T = 125°C
A
