© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSX TJ= 25°C to 150°C 1000 V
VDGX TJ= 25°C to 150°C 1000 V
VGSX Continuous ±20 V
VGSM Transient ±30 V
IDM TC= 25°C, Pulse Width Limited by TJ400 mA
PDTC= 25°C 25 W
TA= 25°C 1.1 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-252 0.35 g
TO-251 0.40 g
TO-220 3.00 g
DS98809C(7/10)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSX VGS = -10V, ID = 25μA 1000 V
VGS(off) VDS = 25V, ID = 25μA - 2.0 - 4.5 V
IGSX VGS = ±20V, VDS = 0V ±100 nA
IDSX(off) VDS = VDSX, VGS= -10V 10 μA
TJ = 125°C 250 μA
RDS(on) VGS = 0V, ID = 50mA, Note 1 50 80 Ω
ID(on) VGS = 0V, VDS = 25V, Note 1 400 mA
High Voltage
Power MOSFET
N-Channel, Depletion Mode
IXTY01N100D
IXTU01N100D
IXTP01N100D
VDSX = 1000V
RDS(on) ≤≤
≤≤
≤ 80ΩΩ
ΩΩ
Ω
Features
• Normally ON Mode
• International Standard Packages
• Low RDS(on) HDMOSTM Process
• Rugged Polysilicon Gate Cell Structure
• Fast Switching Speed
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Level Shifting
• Triggers
• Solid State Relays
• Current Regulators
G = Gate D = Drain
S = Source Tab = Drain
TO-252 (IXTY)
GDS
TO-220AB (IXTP)
D (Tab)
G
S
TO-251 (IXTU)
D
S
G
D (Tab)
D (Tab)
IXTY01N100D IXTU01N100D
IXTP01N100D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 100V, ID = 100mA, Note 1 100 200 mS
Ciss 100 pF
Coss VGS = -10V, VDS = 25V, f = 1MHz 12 pF
Crss 2 pF
td(on) 7 ns
tr 10 ns
td(off) 34 ns
tf 64 ns
Qg(on) 5.8 nC
Qgs VGS = ±5V, VDS = 500V, ID = 50mA 3.6 nC
Qgd 0.4 nC
RthJC 5.0 °C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VSD IF = 100mA, VGS = -10V, Note 1 1.5 V
trr 1.5 μs
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = ±5V, VDS = 50V, ID = 50mA
RG = 30Ω (External)
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
IF = 750mA, -di/dt = 100A/μs
VR = 25V, VGS = -10V
TO-252 AA (IXTY) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
TO-251 (IXTU) Outline
1. Gate 2,4 .Drain
3. Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 .086 .094
A1 0.89 1.14 0.35 .045
b 0.64 0.89 .025 .035
b1 0.76 1.14 .030 .045
b2 5.21 5.46 .205 .215
c 0.46 0.58 .018 .023
c1 0.46 0.58 .018 .023
D 5.97 6.22 .235 .245
E 6.35 6.73 .250 .265
e 2.28 BSC .090 BSC
e1 4.57 BSC .180 BSC
H 17.02 17.78 .670 .700
L 8.89 9.65 .350 .380
L1 1.91 2.28 .075 .090
L2 0.89 1.27 .035 .050
© 2010 IXYS CORPORATION, All Rights Reserved
IXTY01N100D IXTU01N100D
IXTP01N100D
Fi g. 1. Ou tp ut C h ar acteri sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 5.0V
0V
-1.5V
-1.0V
- 3.0V
- 0.5V
- 2.0V
Fi g . 2. Ou tp u t Ch ar acteri sti cs @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
01234567891011
V
DS
- Volts
I
D
- MilliAmperes
-1.5V
- 2.0V
- 3.0V
V
GS
= 5.0V
0V
-1.0V
- 0.5V
Fi g . 6. N ormali z ed R
DS(on)
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 0V
I
D
= 50mA
Fig. 3. Drain Current @ T
J
= 25ºC
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0 50 100 150 200 250 300 350 400 450
V
DS
- Volts
I
D
- Amperes
V
GS
= 0V
- 3.5V
- 2.5V
- 3.0V
-2.0V
-1.5V
-1.0V
-0.5V
Fi g . 5. D yn amic Resi stan ce vs. Gate Vol tag e
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
V
GS
- Volts
R
O
- Ohms
∆
V
DS
= 300V - 100V
T
J
= 25ºC
T
J
= 100ºC
Fig. 4. Drain Current @ T
J
= 100ºC
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0 50 100 150 200 250 300 350 400 450
V
DS
- Volts
I
D
- Amperes
V
GS
= 0V
-1.0V
- 2.5V
- 3.0V
- 3.5V
-0.5V
- 2.0V
- 1.5V
- 4.0V
IXTY01N100D IXTU01N100D
IXTP01N100D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. RDS(on) Normalized to ID = 50mA Valu e
vs. Drain Current
0
1
2
3
4
5
0 100 200 300 400 500 600 700 800 900 1000
I
D
- MilliAmperes
R
DS(on)
- Normalized
V
GS
= 0V
5V
- - - -
T
J
= 125ºC
T
J
= 25ºC
Fi g . 8. Inp u t Admi ttan ce
0
50
100
150
200
250
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
V
GS
- Volts
I
D
- MilliAmperes
T
J
= 125ºC
25ºC
- 40ºC
V
DS
= 100V
Fig. 9. Transconductance
0
50
100
150
200
250
300
350
0 50 100 150 200 250
I
D
- MilliAmperes
g
f s
- MilliSiemens
T
J
= - 40ºC
V
DS
= 100V
25ºC
125ºC
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
300 400 500 600 700 800 900
V
SD
- Volts
I
S
- MilliAmperes
T
J
= 125ºC
V
GS
= -10V
T
J
= 25ºC
Fig. 12. Gate Charge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0123456
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 50mA
I
G
= 1mA
Fi g . 11. C ap aci tan ce
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_01N100D(F2)7-01-10
IXTY01N100D IXTU01N100D
IXTP01N100D
Fi g . 15 . Maximum Tr an si ent Th ermal Impe d an ce
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 13 . F o r war d -Bia s Safe Op erating Ar ea
@ T
C
= 25ºC
0.01
0.10
1.00
10 100 1,000
V
DS
- Volts
I
D
- Amperes
TJ = 150ºC
TC = 25ºC
Single Pulse
1ms
250µs
RDS(on) Limit
10ms
DC
100ms
Fig. 14. Forward-Bias Safe Operating Ar ea
@ T
C
= 75ºC
0.01
0.10
1.00
10 100 1,000
V
DS
- Volts
I
D
- Amperes
TJ = 150ºC
TC = 75ºC
Single Pulse
1ms
250µs
RDS(on) Limit
10ms
DC
100ms
