IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = RDS(on) N-Channel, Depletion Mode 1000V 80 TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25C to 150C Maximum Ratings 1000 V VDGX TJ = 25C to 150C 1000 V TO-251 (IXTU) VGSX Continuous 20 V VGSM Transient 30 V IDM TC = 25C, Pulse Width Limited by TJ 400 mA PD TC = 25C TA = 25C 25 1.1 W W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 0.35 0.40 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-251 TO-220 G D S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = -10V, ID = 25A 1000 VGS(off) VDS = 25V, ID = 25A - 2.0 IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= -10V RDS(on) VGS = 0V, ID = 50mA, Note 1 50 ID(on) VGS = 0V, VDS = 25V, Note 1 400 V - 4.5 V 100 nA 10 A 250 A TJ = 125C (c) 2010 IXYS CORPORATION, All Rights Reserved 80 mA * * * * * Normally ON Mode International Standard Packages Low RDS(on) HDMOSTM Process Rugged Polysilicon Gate Cell Structure Fast Switching Speed Advantages * Easy to Mount * Space Savings * High Power Density Applications * * * * Level Shifting Triggers Solid State Relays Current Regulators DS98809C(7/10) IXTY01N100D IXTU01N100D IXTP01N100D Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 100V, ID = 100mA, Note 1 100 Ciss Coss 200 mS 100 pF 12 pF 2 pF VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs ns ns 34 ns 64 ns 5.8 nC 3.6 nC 0.4 0.50 VGS = 5V, VDS = 50V, ID = 50mA RG = 30 (External) VGS = 5V, VDS = 500V, ID = 50mA Qgd RthJC RthCS 7 10 Resistive Switching Times Qg(on) TO-220 TO-252 AA (IXTY) Outline Dim. Millimeter Min. Max. Inches Min. Max. nC A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 5.0 C/W C/W A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 1. Gate 2. Drain 3. Source 4. Drain Bottom Side Characteristic Values Min. Typ. Max. e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC VSD IF = 100mA, VGS = -10V, Note 1 1.5 V 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 trr IF = 750mA, -di/dt = 100A/s VR = 25V, VGS = -10V H L 1.5 s L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 TO-220 (IXTP) Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-251 (IXTU) Outline 1. Gate 3. Source Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 8.89 1.91 0.89 9.65 2.28 1.27 .350 .075 .035 .380 .090 .050 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 2,4 .Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY01N100D IXTU01N100D IXTP01N100D Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Output Characteristics @ T J = 125C 100 100 VGS = 5.0V 0V 90 80 - 0.5V 80 - 0.5V 70 60 -1.0V 50 40 70 ID - MilliAmperes ID - MilliAmperes VGS = 5.0V 0V 90 -1.5V 30 60 -1.0V 50 40 30 20 -1.5V 20 - 2.0V 10 10 - 3.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 - 2.0V - 3.0V 0 4.5 5 0 1 2 3 4 VDS - Volts 5 6 7 8 9 10 Fig. 3. Drain Current @ T J = 25C Fig. 4. Drain Current @ T J = 100C 1.E+01 1.E+01 VGS = 0V 1.E+00 VGS = 0V 1.E+00 -0.5V 1.E-01 -1.0V -0.5V -1.0V 1.E-01 -1.5V - 1.5V - 2.0V -2.0V 1.E-02 ID - Amperes ID - Amperes 11 VDS - Volts - 2.5V 1.E-03 - 3.0V 1.E-04 1.E-02 - 2.5V 1.E-03 - 3.0V 1.E-04 - 3.5V 1.E-05 1.E-05 - 3.5V - 4.0V 1.E-06 1.E-06 1.E-07 1.E-07 0 50 100 150 200 250 300 350 400 0 450 50 100 150 Fig. 5. Dynamic Resistance vs. Gate Voltage 250 300 350 400 450 Fig. 6. Normalized RDS(on) vs. Junction Temperature 1.E+09 2.4 VDS = 300V - 100V VGS = 0V 2.2 1.E+08 I D = 50mA R DS(on) - Normalized 2.0 1.E+07 R O - Ohms 200 VDS - Volts VDS - Volts TJ = 25C TJ = 100C 1.E+06 1.E+05 1.8 1.6 1.4 1.2 1.0 0.8 1.E+04 0.6 0.4 1.E+03 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 VGS - Volts (c) 2010 IXYS CORPORATION, All Rights Reserved -1.0 -0.5 0.0 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTY01N100D IXTU01N100D IXTP01N100D Fig. 7. RDS(on) Normalized to ID = 50mA Value vs. Drain Current Fig. 8. Input Admittance 250 5 VDS = 100V VGS = 0V 5V - - - - 200 ID - MilliAmperes R DS(on) - Normalized 4 3 TJ = 125C 2 TJ = 125C 25C - 40C 150 100 1 50 TJ = 25C 0 0 100 200 300 400 500 600 700 800 900 0 -3.5 1000 -3.0 -2.5 ID - MilliAmperes Fig. 9. Transconductance -1.0 -0.5 300 TJ = - 40C VGS = -10V 25C 300 250 125C 250 IS - MilliAmperes g f s - MilliSiemens -1.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 350 VDS = 100V -2.0 VGS - Volts 200 150 100 200 150 TJ = 125C TJ = 25C 100 50 50 0 0 50 100 150 200 0 300 250 400 500 ID - MilliAmperes 600 700 800 900 5 6 VSD - Volts Fig. 12. Gate Charge Fig. 11. Capacitance 1,000 5 f = 1 MHz 4 VDS = 500V 3 I G = 1mA Ciss 100 2 VGS - Volts Capacitance - PicoFarads I D = 50mA Coss 10 1 0 -1 -2 -3 Crss -4 -5 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 2 3 QG - NanoCoulombs 4 IXTY01N100D IXTU01N100D IXTP01N100D Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 75C 1.00 1.00 RDS(on) Limit RDS(on) Limit 1ms 0.10 10ms ID - Amperes ID - Amperes 250s 250s 0.10 1ms 100ms TJ = 150C 10ms TJ = 150C DC TC = 25C Single Pulse TC = 75C Single Pulse 100ms DC 0.01 0.01 10 100 10 1,000 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z(th)JC - C / W 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_01N100D(F2)7-01-10