2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.60.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 1000 7 28 30 7 463 255 +150 -55 to +150 *1 L=17.3mH, Vcc=100V Unit V A A V A mJ W C C < *2 Tch=150C Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton mm t No Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) o c e r IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS =1000V VGS=0V VGS=30V VDS=0V ID=3.5A VGS=10V d en Gate(G) Source(S) . de ew n for Electrical characteristics (Tc =25C unless otherwise specified) Drain(D) Tch=25C Tch=125C ID=3.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=7A VGS=10V RGS=10 Vcc=500V ID=7A VGS=10V L=17.3 mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C n sig Min. Typ. Max. 100 2.5 3.0 3.5 10 500 0.2 1.0 10 100 1.54 2.0 2.7 5.5 1480 2220 170 255 75 113 25 38 50 75 160 240 70 105 84 126 23 35 31 47 7 1.00 1.50 1.6 15.0 Units V V A mA nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 0.490 50.0 C/W C/W 1 2SK3337-01 FUJI POWER MOSFET Characteristics Safe operating area ID=f(VDS):Single Pulse,Tc=25C Allowable Power Dissipation PD=f(Tc) 2 300 10 t= 1s 250 10s 1 200 10 100s ID [A] PD [W] D.C. 150 1ms 0 100 10 t 50 D= 10ms t T 100ms T -1 0 10 0 25 50 75 100 125 10 150 1 2 3 10 10 VDS [V] Tc [C] Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C 14 10 12 20V 10V 7V 6.0V 1 ID[A] ID [A] 5.5V 6 e m m 4 nd 5.0V 2 r ot 0 0 2 4 6 8 N 10 eco 12 14 16 18 20 n sig ew n for 8 . de 10 0.1 VGS=4.5V 0.01 22 24 0 26 1 2 3 4 5 6 7 8 VGS[V] VDS [V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 5 VGS=4.5V 5.0V 5.5V 4 RDS(on) [ ] gfs [S] 10 1 3 6.0V 7V 10V 2 20V 1 0.1 0 0.1 1 0 10 2 4 6 8 10 12 14 16 ID [A] ID [A] http://store.iiic.cc/ 2 2SK3337-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.5A,VGS=10V 5.0 8 4.5 7 4.0 6 VGS(th) [V] 3.5 RDS(on) [ ] 5 4 max. 3.0 typ. 2.5 2.0 3 max. typ. min. 1.5 2 1.0 1 0.5 0.0 0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 50 Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=7A,Tch=25C 100 125 10 -7 20 10 500V 800V n sig C [F] VGS [V] ew n for 10 e m m 10 . de -8 Vcc= 200V -9 nd 5 t No 0 0 50 100 150 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 25 15 75 Tch [C] o c e r 150 Ciss Coss -10 10 Crss -11 10 10 200 -2 10 -1 0 1 10 Qg [C] 10 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 3 100 10 td(off) t [ns] IF [A] 10 2 10 tf 1 tr td(on) 0.1 0.00 1 10 0.25 0.50 0.75 1.00 1.25 1.50 -1 10 0 10 10 1 ID [A] VSD [V] http://store.iiic.cc/ 3 2SK3337-01 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=100V,I(AV)<=7A 0 500 10 0.5 400 0.2 -1 Zth(ch-c) [K/W] 10 EAV [mJ] 300 0.1 0.05 0.02 0.01 -2 10 0 t 200 D= t T T -3 10 -5 10 100 -4 10 -3 10 -2 -1 10 0 10 10 1 10 t [s] 0 0 25 50 75 100 125 150 starting Tch [C] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4