DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description * * * * * The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Very Low Gate Threshold Voltage Designed to be Source-driven Low Switching Losses Low Effective Output Capacitance Designed for Inductive Loads Applications * * * * * * * * Medical Ultrasound Beamforming Ultrasonic Array-focusing Transmitter Piezoelectric Transducer Waveform Drivers High-speed Arbitrary Waveform Generator Normally-on Switches Solid-state Relays Constant Current Sources Power Supply Circuits Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. The DN2625DK6-G contains two MOSFETs in an 8-lead, dual-pad DFN package. The DN2625 contains a single MOSFET in a TO-252 D-PAK package. Package Types TO-252 D-PAK (Top view) 8-lead DFN (Dual Pad) (Top view) DRAIN SOURCE GATE S1 1 G1 2 S2 3 G2 4 D1 8 D1 7 D1 D2 6 D2 5 D2 See Table 3-1 and Table 3-2 for pin information. 2017 Microchip Technology Inc. DS20005537B-page 1 DN2625 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-source Voltage ....................................................................................................................................... BVDSX Drain-to-gate Voltage .......................................................................................................................................... BVDGX Gate-to-source Voltage ......................................................................................................................................... 20V Operating Ambient Temperature, TA ..................................................................................................... -55C to 150C Storage Temperature, TS ....................................................................................................................... -55C to 150C Soldering Temperature (Note 1) ........................................................................................................................... 300C Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: Distance of 1.6 mm from case for 10 seconds DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = 25C. (Note 1) Parameter Sym. Min. Typ. Max. Unit Drain-to-source Breakdown Voltage BVDSX 250 -- -- V VGS = -2.5V, ID = 50 A Drain-to-gate Breakdown Voltage BVDGX 250 -- -- V VGS = -2.5V, ID = 50 A V VDS = 15V, ID = 100 A Gate-to-source Off Voltage Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-source Leakage Current Saturated Drain-to-source Current VGS(OFF) -1.5 -- -2.1 VGS(OFF) -- -- -4.5 IGSS -- -- 100 Conditions mV/C VDS = 15V, ID = 100 A (Note 2) nA -- -- 1 ID(OFF) -- -- 200 A VGS = 20V, VDS = 0V VDS = 250V, VGS = -5V VDS = 250V, VGS = -5V, TA = 125C (Note 2) IDSS 1.1 -- -- A VGS = 0V, VDS = 15V IDS(PULSE) 3.1 3.3 -- A VGS = 0.9V, VDS = 15V (With duty cycle of 1%) Static Drain-to-source On-resistance RDS(ON) -- -- 3.5 VGS = 0V, ID = 1A Change in RDS(ON) with Temperature RDS(ON) -- -- 1.1 %/C Pulsed Drain-to-source Current Note 1: 2: VGS = -0V, ID = 200 mA (Note 2) Unless otherwise stated, all DC parameters are 100% tested at +25C. Pulse test: 300 s pulse, 2% duty cycle. Specification is obtained by characterization and is not 100% tested. DS20005537B-page 2 2017 Microchip Technology Inc. DN2625 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = 25C. (Note 2) Parameter Sym. Min. Typ. Max. GFS 100 -- -- Input Capacitance CISS -- 800 1000 pF Common Source Output Capacitance COSS -- 70 210 pF Reverse Transfer Capacitance CRSS -- 18 70 pF Turn-on Delay Time td(ON) -- -- 10 ns Forward Transconductance Rise Time Turn-off Delay Time Fall Time Unit Conditions mmh0 VDS = 10V, ID = 150 mA tr -- -- 20 ns td(OFF) -- -- 10 ns tf -- -- 20 ns Total Gate Charge QG -- -- 7.04 nC Gate-to-source Charge QGS -- -- 0.783 nC Gate-to-drain Charge QGD -- -- 3.73 nC VSD -- -- 1.8 V VGS = -2.5V, VDS = 25V, f = 1 MHz VDD = 25V, ID = 150 mA, RGEN = 3, VGS = 0V to -10V ID = 3.5A, VDS = 100V, VGS = 1.5V DIODE PARAMETER Diode Forward Voltage Drop Note 1: 2: VGS = -2.5V, ISD = 150 mA (Note 1) Unless otherwise stated, all DC parameters are 100% tested at +25C. Pulse test: 300 s pulse, 2% duty cycle. Specification is obtained by characterization and is not 100% tested. TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise specified, for all specifications TA = TJ = +25C. Parameter Sym. Min. Typ. Max. Unit Conditions Operating Ambient Temperature TA -55 -- 150 C Storage Temperature TS -55 -- 150 C Soldering Temperature -- -- -- 300 C Note 1 TO-252 D-PAK JA -- 81 -- C/W Note 2 8-lead DFN (Dual Pad) JA -- 29 -- C/W Note 3 TEMPERATURE RANGE PACKAGE THERMAL RESISTANCE Note 1: 2: 3: Distance of 1.6 mm from case for 10 seconds Four-layer, 1-oz, 3 x 4-inch PCB with 20 via for drain pad Four-layer, 1-oz, 3 x 4-inch PCB with 12 via for drain pad THERMAL CHARACTERISTICS ID ( 1) (Continuous) (A) ID (Pulsed) (A) IDR( 1) (A) IDRM (A) TO-252 D-PAK 1.1 3.3 1.1 3.3 8-lead DFN (Dual Pad) 1.1 3.3 1.1 3.3 Package Note 1: ID (Continuous) is limited by maximum TJ. 2017 Microchip Technology Inc. DS20005537B-page 3 DN2625 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 1.20 7.0 1.15 6.0 ID (amps) BVDSX (normalized) VGS = 2.0V 5.0 VGS = 1.5V VGS = 1.0V VGS = 0.5V 4.0 VGS = 0V VGS = -0.5V 3.0 VGS = -1.0V VGS = -1.5V VGS = -2.0V 2.0 1.10 1.05 VGS = -2.5V ID = 1mA 1.00 0.95 0.90 0.85 1.0 0.80 -50 0.0 0 50 100 150 200 -25 0 25 50 75 100 125 150 Tj (OC) 250 VDS (volts) FIGURE 2-1: Output Characteristics. FIGURE 2-4: Temperature. BVDSX Variation with 10 -55OC 9 5.0 4.0 7 25OC 6 125OC 5 4 3 3.5 RDS(ON) (ohms) ID (amps) VGS = 1V 4.5 8 3.0 2.5 2.0 1.5 1.0 2 0.5 1 0 0.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 ID (A) 4.0 VGS (V) Transfer Characteristics. FIGURE 2-5: Current. 5.5 VGS = -2V 5.0 VGS = -1.5V VGS = -1V 4.5 VGS = 0V VGS = 0.5V 3.5 ID (A) VGS(OFF) (normalized) VGS = -0.5V 4.0 VGS = 1V VGS = 1.5V 3.0 VGS = 2V 2.5 2.0 1.5 1.0 1.25 2.50 1.20 2.25 1.15 2.00 1.75 1.10 VGS(OFF) @100A VDS = 15V 1.05 1.50 1.25 1.00 0.95 1.00 RDS(ON) @VGS = 1V ID =1A 0.90 0.75 0.50 0.85 0.5 0.0 On-resistance vs. Drain 0.80 0 1 2 3 4 5 6 7 8 9 10 VDS (V) FIGURE 2-3: DS20005537B-page 4 Saturation Characteristics. RDS(ON) (normalized) FIGURE 2-2: -50 -25 0 25 50 75 100 125 0.25 150 Tj (OC) FIGURE 2-6: VGS(OFF) and RDS(ON) Variation with Temperature. 2017 Microchip Technology Inc. DN2625 4.0 3.5 VDS = 10V -55OC GFS (Siemens) 3.0 2.5 25OC 2.0 1.5 1.0 125OC 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ID (A) FIGURE 2-7: Current. Transconductance vs. Drain 2017 Microchip Technology Inc. DS20005537B-page 5 DN2625 3.0 PIN DESCRIPTION The details on the pins of TO-252 D-PAK and 8-lead DFN (dual pad) are listed in Table 3-1 and Table 3-2. Refer to Package Types for the location of pins. TABLE 3-1: TO-252 D-PAK PIN FUNCTION TABLE Pin Number Pin Name 1 Gate Gate 2 Drain Drain 3 Source 4 Drain TABLE 3-2: Pin Number Description Source Drain 8-LEAD DFN (DUAL PAD) PIN FUNCTION TABLE Pin Name Description 1 S1 Device 1 source 2 G1 Device 1 gate 3 S2 Device 2 source 4 G2 Device 2 gate 5 D2 Device 2 drain 6 D2 Device 2 drain 7 D1 Device 1 drain 8 D1 Device 1 drain DS20005537B-page 6 2017 Microchip Technology Inc. DN2625 4.0 FUNCTIONAL DESCRIPTION Figure 4-1 shows the switching waveforms and test circuit for DN2625. 0V VDD 90% INPUT -10V Pulse Generator 10% t(ON) t(OFF) tr td(ON) VDD td(OFF) 0V tf 10% 90% FIGURE 4-1: OUTPUT RGEN 10% OUTPUT RL INPUT D.U.T. 90% Switching Waveforms and Test Circuit. PRODUCT SUMMARY BVDSX/BVDGX (V) VGS(OFF) (Maximum) (V) IDS (Pulsed) (VGS = 0.9V) (Minimum) (A) 250 -2.1 3.3 2017 Microchip Technology Inc. DS20005537B-page 7 DN2625 5.0 PACKAGING INFORMATION 5.1 Package Marking Information TO-252 (D-PAK) XXXX XXXXX e3 YYWWNNN Legend: XX...X Y YY WW NNN e3 * Note: DS20005537B-page 8 Example 8-lead DFN DN 2625 e3 1641343 XXXXXXX XXXXXXX e3 YYWW NNN Example DN2625D K6 e3 1613 343 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC(R) designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 2017 Microchip Technology Inc. DN2625 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 2017 Microchip Technology Inc. DS20005537B-page 9 DN2625 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. DS20005537B-page 10 2017 Microchip Technology Inc. DN2625 APPENDIX A: REVISION HISTORY Revision A (December 2016) * Converted Supertex Document DSFP-DN2625 to Microchip DS20005537B * Removed obsolete package, 14-lead QFN * Changed the TO-252 D-PAK packaging quantity from 1000/Bag to 2000/Reel * Revised the Features section Revision B (May 2017) * Corrected the 8L DFN Package Outline dimensions by changing it from 4 mm x 4 mm body/1 mm height/1 mm pitch to 5 mm x 5 mm body/0.9 mm height/1.27 mm pitch * Made minor text changes throughout the document 2017 Microchip Technology Inc. DS20005537B-page 11 DN2625 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device Devices: XX - X - Package Environmental Options X Media Type DN2625 = N-Channel Depletion-Mode Vertical DMOS FET (Single Option) DN2625D = N-Channel Depletion-Mode Vertical DMOS FET (Dual Option) Packages: K4 K6 = = TO-252 D-PAK 8-lead DFN Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Types: (blank) = = 2000/Reel for a K4 Package 490/Tray for a K6 Package DS20005537B-page 12 Examples: a) DN2625K4-G: N-Channel Depletion-Mode Vertical DMOS FET (Single Option), TO-252 D-PAK Package, 2000/Reel b) DN2625DK6-G: N-Channel Depletion-Mode Vertical DMOS FET (Dual Option), 8-lead DFN Package, 490/Tray 2017 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-1759-0 == ISO/TS 16949 == 2017 Microchip Technology Inc. DS20005537B-page 13 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 Finland - Espoo Tel: 358-9-4520-820 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Hong Kong Tel: 852-2943-5100 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 Austin, TX Tel: 512-257-3370 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 Raleigh, NC Tel: 919-844-7510 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Tel: 408-436-4270 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 DS20005537B-page 14 China - Dongguan Tel: 86-769-8702-9880 China - Guangzhou Tel: 86-20-8755-8029 China - Hangzhou Tel: 86-571-8792-8115 Fax: 86-571-8792-8116 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-3326-8000 Fax: 86-21-3326-8021 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-3019-1500 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 France - Saint Cloud Tel: 33-1-30-60-70-00 Germany - Garching Tel: 49-8931-9700 Germany - Haan Tel: 49-2129-3766400 Germany - Heilbronn Tel: 49-7131-67-3636 Germany - Karlsruhe Tel: 49-721-625370 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Germany - Rosenheim Tel: 49-8031-354-560 Israel - Ra'anana Tel: 972-9-744-7705 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Italy - Padova Tel: 39-049-7625286 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Norway - Trondheim Tel: 47-7289-7561 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 Taiwan - Kaohsiung Tel: 886-7-213-7830 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 Poland - Warsaw Tel: 48-22-3325737 Romania - Bucharest Tel: 40-21-407-87-50 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Gothenberg Tel: 46-31-704-60-40 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820 2017 Microchip Technology Inc. 11/07/16