BCW70LT1 - ON Semiconductor - Datasheet.Technology

August, 2009 − Rev. 3

1Publication Order Number:

BCW70LT1/D

BCW70LT1G

General Purpose Transistor

PNP Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −45 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR-5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) @TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Device Package Shipping†

ORDERING INFORMATION

SOT−23 (TO−236AB)

CASE 318

STYLE 6

MARKING DIAGRAM

H2 = Device Code

M = Date Code*

G= Pb−Free Package

COLLECTOR

BASE

EMITTER

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BCW70LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

H2 M G

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −2.0 mAdc, IB = 0)

V(BR)CEO

−45 −Vdc

Collector−Emitter Breakdown Voltage

(IC = −100 mAdc, VEB = 0)

V(BR)CES

−50 −Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0 −Vdc

Collector Cutoff Current

(VCB = −20 Vdc, IE = 0)

(VCB = −20 Vdc, IE = 0, TA = 100°C)

ICBO

−

−100

−10

nAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

hFE 215 500 −

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

VCE(sat)

− −0.3 Vdc

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

VBE(on)

−0.6 −0.75 Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(IE = 0, VCB = −10 Vdc, f = 1.0 MHz)

Cobo

−7.0 pF

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

−10 dB

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TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

BANDWIDTH = 1.0 Hz

RS ≈ 0

IC = 10 mA

100 mA

en, NOISE VOLTAGE (nV)

In, NOISE CURRENT (pA)

30 mA

BANDWIDTH = 1.0 Hz

RS ≈∞

IC = 1.0 mA

300 mA

100 mA

30 mA

10 mA

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

2.0 1.0 mA

0.2

300 mA

NOISE FIGURE CONTOURS

(VCE = − 5.0 Vdc, TA = 25°C)

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

Figure 3. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (mA)

Figure 4. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (mA)

0.5 dB

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

IC, COLLECTOR CURRENT (mA)

10 Hz to 15.7 kHz

RS, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF +20 log10 ƪen2)4KTRS)In2RS2

4KTRSƫ1ń2

= Noise Voltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the Transistor referred to the input.

(Figure 4)

= Boltzman’s Constant (1.38 x 10−23 j/°K)

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

20 30 50 70 100 200 300 500 700 1.0k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

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TYPICAL STATIC CHARACTERISTICS

Figure 6. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 7. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*qVC for VCE(sat)

qVB for VBE

0.1 0.2 0.5

Figure 8. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS

)

0.002

TA = 25°C

IC = 1.0 mA 10 mA 100 mA

Figure 9. Temperature Coefficients

50 mA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

IC, COLLECTOR CURRENT (mA)

TA = 25°C

PULSE WIDTH = 300 ms

DUTY CYCLE ≤ 2.0%

IB = 400 mA

350 mA

300 mA250 mA

200 mA

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

-55°C to 25°C

25°C to 125°C

-55°C to 25°C

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.2

1.0

0.8

0.6

0.4

0.2

02.4

0.8

1.6

0.8

1.0 2.0 5.0 10 20 50 100

0.1 0.2 0.5

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

150 mA

100 mA

50 mA

Figure 10. Turn−On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 11. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

2.0 5.0 10 20 30 50

1000

3.01.0

t, TIME (ns)

5.0

7.0

100

300

7.0 70 100

VCC = 3.0 V

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 0.5 V

100

200

300

500

700

- 2.0

-1.0

VCC = - 3.0 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

200

- 3.0 - 5.0 - 7.0 - 20

-10 - 30 - 50 - 70 -100

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TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

Figure 12. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 13. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

500

0.5

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz

)

100

200

300

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

Cib

Cob

TJ = 25°C

Figure 14. Thermal Response

t, TIME (ms)

1.0

0.01

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 10

D = 0.5

0.2

0.1

0.05

0.02

0.01 SINGLE PULSE

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1 (SEE AN-569)

ZqJA(t) = r(t) w RqJA

TJ(pk) - TA = P(pk) ZqJA(t)

P(pk)

FIGURE 16

TJ, JUNCTION TEMPERATURE (°C)

104

-4

IC, COLLECTOR CURRENT (nA)

Figure 15. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model

as shown in Figure 16. Using the model and the device thermal

response the normalized effective transient thermal resistance of

Figure 14 was calculated for various duty cycles.

To find ZqJA(t), multiply the value obtained from Figure 14 by the

steady state value RqJA.

Example:

Dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading

of r(t) is 0.22.

The peak rise in junction temperature is therefore

DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN−569.

10-2

10-1

100

101

102

103

-2

0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

BCW70LT1G

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE,

NEW STANDARD 318−08.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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