Number: DB-027
March 2010 Rel ease , Revision F
Page 1
TAK CHEONG ®
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
DEVICE MARKING DIAGRAM
POLARITY CONFIGURATION
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol Parameter MBR10100CT MBR10150CT MBR10200CT Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage 100 150 200 V
IF(AV) Average Rectified Forward Current
Per Leg
Per Package
5
10 A
IFSM Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load 80 A
TSTG Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperature +150 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol Parameter Value
Units
RθJC Maximum Thermal Resistance, Junction-to-Case (per leg) 1.5 °C/W
RθJA Maximum Thermal Resistance, Junction-to-Ambient (per leg) 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg) TA = 25°C unless otherwise noted
MBR10100CT MBR10150CT MBR10200CT
Symbol Parameter Test Condition
(Note 1) Min Max Min Max Min Max
Units
IR Reverse Current @ rated VR --- 100 --- 100 --- 100 μA
VF Forward Voltage IF = 5A
IF = 10A --- 0.85
0.95 --- 0.92
1.00 --- 1.00
1.25 V
Note/s:
1. Tested under pulse condition of 300μS.
MBR10100CT through MBR10200CT
123T
O
-22
0
AB
1. Anode 2. Cathode 3. Anode
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBR
Line 3 = 10xxxCT
Line 4 = Polarity
Number: DB-027
March 2010 Rel ease , Revision F
Page 2
TAK CHEONG ®
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
00.20.40.60.81
V
F - Instantaneo us Fo rward Vo lt age [V ]
I F - Fo rward Curren t [ A]
Ta=75
Ta=125℃
Ta=150℃
Ta=25℃
f = 1MHz
Ta = 2 5 ℃
10.0
100.0
1000.0
0 5 10 15 20 25 30 35 40
Rever se Voltage [V]
Typ i cal Junction Ca pacitance
[pF]
MBR10150CT
MBR10200CT
MBR10100CT
0
2
4
6
8
10
0 25 50 75 100 125 150
Tc - Case Temperature [℃]
Average Forward Current [A]
0.010
0.100
1.000
10.000
100.000
1000.000
10000.000
0 1020 3040506070 8090100
VR - Reverse Vo lt ag e [ V ]
I R - Reverse Cu rret n [u A
]
Ta=25℃
Ta=75℃
Ta=125℃
Ta= 150℃
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0 10203040 5060708090100
VR - Rev erse Volt age [V]
IR - Rever se Current [uA]
)
Ta=25℃
Ta=75℃
Ta=125℃
Ta= 150℃
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0 15 30 45 60 75 90 105 120 135 150
VR - Reverse Voltage [V]
IR - Reverse Current [uA])
Ta=25℃
Ta=75℃
Ta=125℃
Ta = 15 0 ℃
Figure 3. MBR10100CTTypical Reverse Current (Per Diode)
Figure 1. Forward Current Derating Curve (Per Diode) Figure 2. Junction Capacitance (Per Diode)
Figure 4. MBR10150CTTypical Reverse Current (Per Diode)
Figure 5. MBR10200CTTypical Reverse Current (Per Diode) Figure 6. MBR10100CT Typical Forward Voltage (Per Diode)
Number: DB-027
March 2010 Rel ease , Revision F
Page 3
TAK CHEONG ®
SEMICONDUCTOR
TO220 PACKAGE OUTLINE
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 3.60 4.80 0.142 0.189
A1 1.20 1.40 0.047 0.055
A2 2.03 2.90 0.080 0.114
b 0.40 1.00 0.016 0.039
b2 1.20 1.78 0.047 0.070
c 0.36 0.60 0.014 0.024
D 14.22 16.50 0.560 0.650
e 2.34 2.74 0.092 0.108
E 9.70 10.60 0.382 0.417
H1 5.84 6.85 0.230 0.270
L 12.70 14.70 0.500 0.579
L1 2.70 3.30 0.106 0.130
ØP 3.50 4.00 0.138 0.157
Q 2.54 3.40 0.100 0.134
NOTE: Above package outline conforms to JEDEC TO-220AB.
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1
VF - I nstantaneo u s Forward V o ltage [V ]
I F - F o rward Current [A]
Ta=75℃
Ta=125℃
Ta=150℃
Ta=25℃
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1
VF - Instantaneous Forward Voltage [V]
I F - Fo rward Curren t [ A]
Ta=75℃
Ta=125℃
Ta=150℃
Ta=25℃
Figure 7. MBR10150CT Typical Forward Voltage (Per Diode) Figure 8. MBR10200CT Typical Forward Voltage (Per Diode)
Number: DB-100
April 14, 2 008 / A
DISCLAIMER NOTICE
TAK CHEONG ®
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunctio n of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information re viously supplied. For additio nal information , please visit
our website http://www.takcheong.com, o r consu lt your ne ares t Tak Cheong’s sales off ic e for further assis t anc e.
