(R) SEM ICON DU CTO R 10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier Specification Features: 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V High Switching Speed Device TO-220AB DEVICE MARKING DIAGRAM Low Forward Voltage Drop Low Power Loss and High Efficiency Guard Ring for Over-voltage Protection L = Tak Cheong Logo xxyy = Monthly Date Code Line 2 = MBR Line 3 = 10xxxCT Line 4 = Polarity L xxyy Line 2 Line 3 Line 4 High Surge Capability RoHS Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260C Wave Soldering or per MIL-STD-750, Method 2026. POLARITY CONFIGURATION 1. Anode 2. Cathode 3. Anode MAXIMUM RATINGS (Per Leg, unless otherwise specified ) Symbol VRRM VRWM VR IF(AV) Parameter MBR10150CT MBR10200CT Units 100 150 200 V Maximum Repetitive Reverse Voltage Working Peak Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current Per Leg Per Package IFSM Non-repetitive Peak Forward Surge Current 8.3mS Single Phase @ Rated Load TSTG Storage Temperature Range TJ MBR10100CT 5 10 A 80 A -65 to +150 C +150 C Operating Junction Temperature These ratings are limiting values above which the serviceability of the diode may be impaired. THERMAL CHARACTERISTIC Parameter Symbol Value Units RJC Maximum Thermal Resistance, Junction-to-Case (per leg) 1.5 C/W RJA Maximum Thermal Resistance, Junction-to-Ambient (per leg) 62.5 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Symbol Parameter IR Reverse Current VF Forward Voltage TA = 25C unless otherwise noted MBR10100CT MBR10150CT MBR10200CT (Note 1) Min Max Min Max Min Max @ rated VR --- 100 --- 100 --- 100 Test Condition IF = 5A IF = 10A 0.85 --- 0.92 --- 0.95 A 1.00 --- 1.00 Units V 1.25 Note/s: 1. Tested under pulse condition of 300S. Number: DB-027 March 2010 Release, Revision F Page 1 MBR10100CT through MBR10200CT TAK CHEONG TAK CHEONG (R) SEM ICON DU CTO R TYPICAL CHARACTERISTICS Figure 2. Junction Capacitance (Per Diode) Figure 1. Forward Current Derating Curve (Per Diode) 10 1000.0 8 Typical Junction Capacitance [pF] Average Forward Current [A] f = 1MHz Ta = 25 6 4 2 MBR10100CT MBR10200CT 0 10.0 0 25 50 75 100 125 150 0 5 Tc - Case Tem perature [ ] 10 15 20 25 35 40 Figure 4. MBR10150CTTypical Reverse Current (Per Diode) 10000.000 1000.000 IR - Reverse Current [uA]) 1000.000 Ta= 150 Ta=125 100.000 10.000 Ta=75 1.000 0.100 Ta= 150 100.000 Ta=125 10.000 1.000 Ta=75 0.100 0.010 Ta=25 Ta=25 0.010 0.001 0 10 20 30 40 50 60 70 80 90 100 0 15 VR - Reverse Voltage [V] 30 45 60 75 90 105 120 135 150 VR - Reverse Voltage [V] Figure 5. MBR10200CTTypical Reverse Current (Per Diode) Figure 6. MBR10100CT Typical Forward Voltage (Per Diode) 10 1000.000 100.000 Ta= 150 IF - Forward Current [A] IR - Reverse Current [uA]) 30 Reverse Voltage [V] Figure 3. MBR10100CTTypical Reverse Current (Per Diode) IR - Reverse Curretn [uA] MBR10150CT 100.0 Ta=125 10.000 1.000 Ta=75 0.100 0.010 Ta=150 1 Ta=125 Ta=75 0.1 Ta=25 Ta=25 0.001 0 10 20 30 40 50 60 70 VR - Reverse Voltage [V] 80 90 100 0.01 0 0.2 0.4 0.6 0.8 1 VF - Instantaneous Forward Voltage [V] Number: DB-027 March 2010 Release, Revision F Page 2 TAK CHEONG (R) SEM ICON DU CTO R Figure 7. MBR10150CT Typical Forward Voltage (Per Diode) Figure 8. MBR10200CT Typical Forward Voltage (Per Diode) 10 1 IF - Forward Current [A] IF - Forward Current [A] 10 Ta=150 Ta=125 Ta=75 0.1 Ta=25 1 Ta=150 Ta=125 Ta=75 0.1 Ta=25 0.01 0.01 0 0.2 0.4 0.6 0.8 0 1 0.2 VF - Instantaneous Forward Voltage [V] 0.4 0.6 0.8 1 VF - Instantaneous Forward Voltage [V] TO220 PACKAGE OUTLINE DIM MILLIMETERS MIN MAX INCHES MIN MAX A 3.60 4.80 0.142 0.189 A1 1.20 1.40 0.047 0.055 0.114 A2 2.03 2.90 0.080 b 0.40 1.00 0.016 0.039 b2 1.20 1.78 0.047 0.070 c 0.36 0.60 0.014 0.024 D 14.22 16.50 0.560 0.650 e 2.34 2.74 0.092 0.108 E 9.70 10.60 0.382 0.417 H1 5.84 6.85 0.230 0.270 L 12.70 14.70 0.500 0.579 L1 2.70 3.30 0.106 0.130 OP 3.50 4.00 0.138 0.157 Q 2.54 3.40 0.100 0.134 NOTE: Above package outline conforms to JEDEC TO-220AB. Number: DB-027 March 2010 Release, Revision F Page 3 TAK CHEONG (R) DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong's sales office for further assistance. Number: DB-100 April 14, 2008 / A