{7 SGS-THOMSON D44H1/2/4/5 YF MicRoELEcTROMICS D44H7/8/10/11 SWITCHING APPLICATIONS GENERAL PURPOSE DESCRIPTION The D44H series are silicon multiepitaxial planar transistors and are mounted in Jedec TO-220 pla- stic package. They are intended for various switching and gene- ral purpose applications. TO-220 INTERNAL SCHEMATIC DIAGRAM Cc B NPN So bHOy E ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter D44H | D44H | D44H | D44H Unit 1/2 4/5 7/8 10/11 VcEo Collector-emitter Voltage (ig = 0) 30 45 60 80 Vv Veso Emitter-base Voltage (Ic = 0) 5 v lo Collector Current 10 A lom Collector Peak Current 20 A Prot Total Power Disssipation Tcase 25 C 50 Ww Tstg Storage Temperature 55 to 150 C Tj Junction Temperature 150 C March 1988 12 803D44H1/2-D44H4/5-D44H7/8-D44H10/11 THERMAL DATA | Rth j-case | Thermal Resistance Junction-case Max | 25 C/W | ELECTRICAL CHARACTERISTICS (T pase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit IcBo oy Cutoff Current Vos = Rated Voro 10 pA E= lepo es) Cutoff Current Veg = Rated Veao 400 vA c= VceEo(sus) | Collector-emitter Sustaining lo = 100 mA for D44H1/2 30 Vv Voltage c= for D44H4/5 45 Vv for D44H7/8 60 Vv for D44H10/11 80 Vv Veceisat) | Collector-emitter Saturation | ic =8A lp =O04A Voltage for D44H2/5/8/11 1 v Ic =8A Ip =0.8A for D44H1/4/7/10 1 Vv VBE (sat) Base-emitter Saturation lo =8A Ip =08A 15 Vv Voltage Nee* DC Current Gain Voce =1V Ilo =2A for D44H1/4/7/10 35 for D44H2/5/8/11 60 Voce =1V Io =4A for D44H1/4/7/10 20 for D44H2/5/8/11 40 * Pulsed : pulse duration = 300us, duty cycle = 2/2 804 1,5%. i SGS-THOMSON MICROELECTROMES