This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features e Polysilicon gate Improved stability and reliability No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlied High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling XOWER: MOS [F FIELD EFFECT POWER TRANSISTOR ET Lt IRF35 0,351 D86FQ2,Q1 15 AMPERES 400, 350 VOLTS RDS(ON) = 0.3 2 POINT 0-15(3.84) 2 HOLES 0.043(1.09) 0.038(0.97) CAST TEMP. REFERENCE .20(5.00) SOURCE N-CHANNEL 065(1.65) MAX. TTT DIA. = be 1.050(26.68} DRAIN $s CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47) MAX. n= .388(9.09) MAX fe DIA. + Jt seatina PLANE t .426(10.82) MIN. MAX." 9,675(17.15) 0.650(16.51) 1,197(30.40) 1.177(28.90) 0.162(4.09) DIA. 9.205(5.21) 0.440(11.18) 0.420(10.67) 1.573(39.96) 4 NN | MAX, |g 2.225(5.72) DRAIN (CASE) maximum ratings (To = 25C) (unless otherwise specified) RATING SYMBOL IRF350/D86FQ2 IRF351/D86FQ1 UNITS Drain-Source Voltage Vpss 400 350 Volts Drain-Gate Voltage, Rgg = IMO VparR 400 350 Voits Continuous Drain Current @ Tg = 25C Ip 15 15 A @ To = 100C 9 9 A Pulsed Drain Current lom 60 60 A Gate-Source Voitage Ves +20 +20 Volts Total Power Dissipation @ To = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 Ww/C Operating and Storage Junction Temperature Range Ty, Tete -55 to 150 ~5 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Rava 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL. 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 157electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX | UNIT off characteristics Drain-Source Breakdown Voitage {RF350/D86FQ2 | BVpss 400 _ _ Volts (Vag = OV, Ip = 250 wA) IRF351/D86FQ1 350 _ Zero Gate Voitage Drain Current loss (Vps = Max Rating, Veg = OV, Tc = 25C) _ _ 250 HA (Vps = Max Rating, x 0.8, Vag = OV, To = 125C) _ 1000 OOo Oy Current lass _ _ +100 nA on characteristics* Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas, |p = 250 pA) On-State Drain Current { 15 A (Vag = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance (V@g = 10V, Ip = 8A) Rps(ON) _ 0.26 0.30 Ohms Forward Transconductance (Vos = 10V, Ip = 8A) Ofs 5.6 8.0 mhos dynamic characteristics Input Capacitance Veg = OV Ciss _ 2800 3000 pF Output Capacitance Vps = 25V Coss _ 300 600 pF Reverse Transfer Capacitance f=1MHz Crss _ 60 200 pF switching characteristics Turn-on Delay Time Vos = 175V ta(on) _ 20 _ ns Rise Time Ip = 8A, Vas = 15V tr _ 25 _ ns Turn-off Delay Time RGeEN = 509, Rag = 12.50 | tavotf) 110 ns Fall Time (Res (EQuiv.) = 100) te _ 70 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 15 A Pulsed Source Current Ism _ _ 60 A Diode Forward Voltage Vsp _ 1.0 16 Volts (To = 28C, Ves = OV, Ig = 15A) Reverse Recovery Time ter _- 500 _ ns (Ig = 15A, dig/dt = 100A/psec, Tc = 125C) Qrr - 6.5 _- uC *Pulse Test: Pulse width = 300 ws, duty cycle = 2% 100 80 60 40 20 0.8 OPERA IN THIS AREA 0.6 F MAY BE LIMITED BY R Ip. DRAIN CURRENT (AMPERES) SINGLE PULSE To 25C WAF351/D86FQ1 iRF350/D86FO2 1 2 4 6 810 20 40 6080100 200 Vpg. DRAIN -SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 CONDITIONS: Rog(ONn) CONDITIONS: Ip = 8.0 A, Vag = 10V V@S(TH) CONDITIONS: Ip = 250A, Vg = Vag Rosion) Poston; AND Vesita) NORMALIZED -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rysioy, AND Vegi) VS. TEMP. 158