MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3
September 2009
MOC8111M, MOC8112M, MOC8113M
6-Pin DIP Optocoupler for Power Supply Applications
(No Base Connection)
Features
■
High isolation voltage
7500 VAC Peak—1 second
■
High BV
CEO
minimum 70 Volts
■
Current transfer ratio in selected groups:
MOC8111M: 20% min.
MOC8112M: 50% min.
MOC8113M: 100% min.
■
Maximum switching time in saturation specified
■
Underwriters Laboratory (UL) recognized
(File #E90700, Vol. 2)
■
IEC60747-5-2 approved (ordering option V)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Description
The MOC811XM series consists of a Gallium Arsenide
IRED coupled with an NPN phototransistor. The base of
the transistor is not bonded to an external pin for
improved noise immunity.
Schematic
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6N/C
N/C
6
1
6
6
1
1
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 2
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Unit
TOTAL DEVICE
P
D
Total Device Power Dissipation @ T
A
= 25°C 260 mW
Derate above 25°C 3.5 mW/°C
T
OPR
Ambient Operating Temperature Range -40 to +100 °C
T
STG
Storage Temperature Range -40 to +150 °C
T
SOL
Lead Soldering Temperature (Wave Solder)
(1/16" from case, 10 sec. duration)
260 °C
INPUT LED
I
F
Forward Current – Continuous 90 mA
I
F
(pk) Forward Current – Peak (PW = 1µs, 300pps) 3 A
V
R
Reverse Voltage 6 V
P
D
LED Power Dissipation @ T
A
= 25°C 135 mW
Derate above 25°C 1.8 mW/°C
OUTPUT TRANSISTOR
P
D
Detector Power Dissipation @ T
A
= 25°C 200 mW
Derate above 25°C 2.67 mW/°C
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 3
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Isolation Characteristics
Transfer Characteristic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 60mA 1.35 1.65 V
I
F
= 10mA 1.15 1.50
V
R
Reverse Voltage I
R
= 10µA 6.0 15 V
C
J
Capacitance V
F
= 0V, f = 1.0MHz 50 pF
V
F
= 1V, f = 1.0MHz 65
I
R
Reverse Leakage Current V
R
= 3.0V .35 10 µA
DETECTOR
BV
CEO
Breakdow Voltage, Collector to Emitter I
C
= 1.0mA, I
F
= 0 70 V
BV
ECO
Breakdow Voltage, Emitter to Collector I
E
= 100µA, I
F
= 0 7 V
I
CEO
Leakage Current, Collector to Emitter V
CE
= 10V, I
F
= 0 5 50 V
C
CE
Capacitance, Collector to Emitter V
CE
= 0 V, f = 1MHz 8 pF
Symbol Characteristic Test Conditions Min. Typ. Max. Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500
V
AC(PK)
C
ISO
Isolation Capacitance V
I-O
= 0, f = 1MHz 0.5 pF
Symbol Characteristics Test Conditions Device Min. Typ. Max. Units
DC CHARACTERISTICS
CTR Output/Input Current
Transfer Ratio
I
F
= 10mA, V
CE
= 5V MOC8111M 20 %
MOC8112M 50
MOC8113M 100
V
CE(SAT)
Collector-Emitter
Saturation Voltage
I
F
= 10mA, I
C
= 2.5mA All 0.27 0.4 V
AC CHARACTERISTICS
Non-Saturated Switching Times
t
on
Tur n-On Time R
L
= 100
Ω
, I
C
= 2mA,
V
CC
= 10V, See Figure 7
All 6.0 10 µs
t
off
Tur n-Off Time All 5.5 10 µs
Saturated Switching Times
t
on
Tur n-On Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 3.0 5.5 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 4.2 8.0
t
r
Rise-Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 2.0 4.0 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 3.0 6.0
t
off
Tur n-Off Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 18 34 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 23 39
t
f
Fall-Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 11 20 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 14 24
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 4
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 V
peak
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 V
peak
V
IORM
Max. Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over Voltage 6000 V
peak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, V
IO
= 500V 10
9
Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 5
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Typical Performance Characteristics
NORMALIZED CTR
Fig. 3 Normalized CTR vs. Ambient Temperature
TA - AMBIENT TEMPERATURE (°C)
-75 -50 -25 0 25 50 75 100 125
NORMALIZED CTR
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IF = 20 mA
IF = 10 mA
IF = 5 mA
Normalized to
IF = 10 mA
TA = 25°C
IF - LED FORWARD CURRENT (mA)
110100
V
F
- FORWARD VOLTAGE (V)
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = -55°C
TA = 100°C
TA = 25°C
Fig. 2 Normalized CTR vs. Forward CurrentFig. 1 LED Forward Voltage vs. Forward Current
IF - FORWARD CURRENT (mA)
051015 20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Normalized to
IF = 10 mA
TA = 25°C
VCE = 5.0 V
Fig. 4 Collector Emitter Saturation Voltage
vs Collector Current
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
IF = 5 mA
IF = 2.5 mA
IF = 10 mA
IF = 20 mA
TA = 25°C
VCE (sat) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IC - COLLECTOR CURRENT (mA)
Fig. 6 Dark current vs. Ambient Temperature.
0255075100 125
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (µA)
1e-6
1e-5
1e-4
1e-3
1e-2
1e-1
1e+0
1e+1
VCE = 10V
TA - AMBIENT TEMPERATURE (°C)
Fig. 5 Switching Speed vs. Load Resistor
R-LOAD RESISTOR (kΩ)
0.1 1 10 100
SWITCHING SPEED - (µs)
0.1
1
10
100
1000
Toff
Tf
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 6
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IF RL = 100Ω
VCC = 10V
OUTPUT
ton
10%
90%
toff
Figure 7. Switching Time Test Circuit and Waveforms
IC
Adjust IF to produce IC = 2 mA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 7
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 8
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Ordering Information
Marking Information
Option Example Part Number Description
No Suffix MOC8111M Through Hole
S MOC8111SM Surface Mount Lead Bend
SR2 MOC8111SR2M Surface Mount; Tape and Reel
T MOC8111TM 0.4" Lead Spacing
V MOC8111VM VDE 0884
TV MOC8111TVM IEC60747-5-2 (VDE), 0.4" Lead Spacing
SV MOC8111SVM IEC60747-5-2 (VDE), Surface Mount
SR2V MOC8111SR2VM IEC60747-5-2 (VDE), Surface Mount, Tape and Reel
MOC8111
V X YY Q
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘8’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 9
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Tape Dimensions
Note:
All dimensions are in millimeters.
Reflow Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 10
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intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
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FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
ThePower Franchise®
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TinyBuck™
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TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
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µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
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expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I40
First Production
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
