LESHAN RADIO COMPANY, LTD.
K6–1/6
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter V oltage V CEO –65 –45 –30 V
Collector–Base V oltage V CBO –80 –50 –30 V
Emitter–Base V oltage V EBO –5.0 –5.0 –5.0 V
Collector Current — Continuous I C–100 –100 –100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D150 mW
TA = 25°C
Thermal Resistance, Junction to Ambient R θJA 833 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F;
LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
– 65 — —
(IC = –10 mA) V (BR)CEO – 45 — — v
– 30 — —
Collector–Emitter Breakdown Voltage
– 80 — —
(IC = –10 µA, VEB = 0) V (BR)CES – 50 — — v
– 30 — —
Collector–Base Breakdown Voltage – 80 — —
(IC = – 10 µA) V (BR)CBO – 50 — — v
– 30 — —
Emitter–Base Breakdown Voltage – 5.0 — —
(IE = – 1.0 µA) V (BR)EBO – 5.0 — — v
– 5.0 — —
Collector Cutoff Current (VCB = – 30 V) I CBO — — – 15 nA
(VCB = – 30 V, TA = 150°C) — — – 4.0 µA
1.FR–5=1.0 x 0.75 x 0.062in
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
1
3
2
LBC856AWT1, BWT1
LBC857AWT1, BWT1
LBC858AWT1, BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
SOT– 323 / SC-70
Features
Pb Free Package May be Available. The G.Suffix Denotes a
Pb Free Lead Finish
–
–
LESHAN RADIO COMPANY, LTD.
K6–2/6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain h FE —90——
(I
C
= –10 µA, V
CE
= –5.0 V)
— 150 —
— 270 —
(I
C
= –2.0 mA, V
CE
= –5.0 V)
125 180 250
220 290 475
420 520 800
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) V CE(sat) — — – 0.3 V
Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) — — – 0.65
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V BE(sat) — – 0.7 — V
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) — – 0.9 —
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) V BE(on) – 0.6 — – 0.75 V
Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) — — – 0.82
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T100 — — MHz
(I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = – 10 V, f = 1.0 MHz) Cob — — 4.5 pF
Noise Figure NF –– –– 10 dB
(I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1, CWT1
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
LBC858C,
LBC856B,LBC857B, LBC858B
LBC856A, LBC857A, LBC858A
Device
ORDERING INFORMATION
Package Shipping
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
LBC858AWT1G, BWT1G, CWT1G
SOT-23
SOT-23
SOT-23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Pb Free
–
()
LESHAN RADIO COMPANY, LTD.
K6–3/6
LBC856AWT1, BWT1 LBC857AWT1, BWT1, LBC858AWT1, BWT1, CWT1
LBC857/LBC858
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain I C , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” V oltages
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
VCE= –10 V
T A = 25°C
2.0
1.5
1.0
0.7
0.5
0.3
0.2
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
T A = 25°C V BE(sat) @ I C /I B=10
V BE(on) @ V CE = –10 V
V CE(sat) @ I C /I B = 10
T A = 25°C
V, VOLTAGE (VOLTS)
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
θθ
θθ
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
1.0
1.2
1.6
2.0
2.4
2.8
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
VCE, COLLECTOR– EMITTER VOLTAGE (V)
I C= –200 mA
–55°C to +125°C
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter T emperature Coefficient
–0.2 –1.0 –10 –100–0.02 –0.1 –1.0 –10 –20
–2.0
–1.6
–1.2
–0.8
–0.4
0
I C =
–10 mA
I C= –100 mA
I C= –
20 mA
I C= –50 mA
hFE, NORMALIZED DC CURRENT GAIN
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
T A=25°C V CE = –10V
T A = 25°C
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
C, CAPACITANCE(pF)
C ob
C ib
400
300
200
150
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
LESHAN RADIO COMPANY, LTD.
K6–4/6
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
VBE(sat) @ I C/I B=10
VBE @VCE= –5.0 V
T J= 25°C
V CE = –5.0V
T A = 25°C
VCE(sat) @ I C /I B= 10
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
θθ
θθ
θVB , TEMPERATURE COEFFICIENT (mV/°C) V, VOLTAGE (VOLTS)
I C =
–10mA –100mA
–20mA –200mA
TJ= 25°C
θ VB for V BE
–55°C to 125°C
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–1.0
–0.8
–0.6
–0.4
–0.2
0
2.0
1.0
0.5
0.2
–2.0
–1.6
–1.2
–0.8
–0.4
0
–0.1–0.2 –1.0 –2.0 –5.0–10 –20 –50 –100–200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
hFE , DC CURRENT GAIN (NORMALIZED)
–50mA
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
C, CAPACITANCE (pF)
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
C ob
C ib
T J= 25°C VCE= –5.0V
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
LBC856AWT1, BWT1 LBC857AWT1, BWT1, LBC858AWT1, BWT1, CWT1
LBC856
LESHAN RADIO COMPANY, LTD.
K6–5/6
LBC856AWT1, BWT1 LBC857AWT1, BWT1, LBC858AWT1, BWT1, CWT1
t, TIME (ms)
Figure 13. Thermal Response
V CE , COLLECT OR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk)
<
150°C. T J(pk) may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
BC558
BC557
BC556
Z θJC (t) = r(t) R θJC
R θJC = 83.3°C/W MAX
Z θJA (t) = r(t) R θJA
R θJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R θJC (t)
I C , COLLECTOR CURRENT (mA) r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
DUTY CYCLE, D = t 1 /t 2
t 1
t 2
P(pk)
SINGLE PULSE
SINGLE PULSE
TA= 25°C TJ= 25°C
3 ms1s
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D=0.5
0.2
0.1 0.05
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
–1.0 –0.5 –10 –30 –45 –65–100
–200
–100
–50
–10
–5.0
–2.0
LESHAN RADIO COMPANY, LTD.
0.7
1.9
0.028
0.65
0.025
0.65
0.025
inches
mm
0.075
0.035
0.9
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1.
DIMENSION
I
NG
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.071 0.087 1.80 2.20
K 0.017 REF 0.425 REF
L 0.026 BSC 0.650 BSC
N 0.028 REF 0.700 REF
S 0.079 0.095 2.00 2.40
B 0.045 0.053 1.15 1.35
C 0.032 0.040 0.80 1.00
D 0.012 0.016 0.30 0.40
G 0.047 0.055 1.20 1.40
H 0.000 0.004 0.00 0.10
J 0.004 0.010 0.10 0.25
CN
AL
D
G
SB
H
J
K
3
12
0.05 (0.002)
SC
-
70 / SOT
-
323
K6–6/6
