Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V Tos(on) = 0.850 and 1.10 Features: lf Single pulse avalanche energy rated @ SOA is power-dissipation limited Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF840R, IRF841R, IRF842R and IRF843R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- File Number 2034 TERMINAL DIAGRAM D 9208-42656 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION hancement-mode silicon-gate power field-effect transis- Too SOURCE tors designed for applications such as switching regulators, DRAIN Ss switching converters, motor drivers, relay drivers, and driv- (FLANGE) O __ a DRAIN ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be S>S> operated directly from integrated circuits. Tor view L cate The IRF-types are supplied in the JEDEC TO-220AB plastic 9208-39528 package. JEDEC TO-220AB Absolute Maximum Ratings P. t IRF840R IRF841R IRF842R IRF843R Units Vos Drain - Source Voltage @ 500 450 500 450 v Vocr Drain - Gate Voltage (Ras = 20 KQ) @ 500 450 500 450 Vv Ip @ Te = 25C Continuous Drain Current 8.0 8.0 7.0 7.0 A Ip @ Te = 100C Continuous Drain Current 5.0 5.0 4.0 4.0 A lpm Pulsed Drain Current @ 32 32 28 28 A Vos Gate - Source Voltage +20 Vv Pp @ Te = 25C Max. Power Dissipation 125 (See Fig. 14) Ww Linear Derating Factor 1.0 (See Fig. 14) w/c Eas Single Pulse Avalanche Energy Rating @ 510 mj Ts Storage Temperature Range ~85 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-162Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Par Type Min. Typ. Max. | Units. Test Conditions Drain - E BVoss rain - Source Breakdown Voltage pr e40R 500 _ _ Vv Vos = OV IRF841R - IRF843R 450 _ _ lo = 250uA Vesen Gate Threshold Voltage ALL 2.0 _ 4.0 Vos = Vas, lo = 2504 A Icss Gate-Source Leakage Forward ALL = = 500 nA Ves = 20V Isss Gate-Source Leakage Reverse ALL = _ ~500 nA Ves = -20V foss Zero Gate Voltage Drain Current = 250 HA Vos = Max. Rating, Ves = OV ALL _ | 1000 [ A | Vos = Max. Rating x 0.8, Ves = OV, Te = 125C loon On-State Drain Current @ IRF840R | 59 _ _ A eee Vos > Ipiom X Rostons max, Vas = 10V inreasR| 79 | ~ | A Rosion Static Drain-Source On-State IRF840R ; _ 08 0.85 Q Resistance IRF841R Vas = 10V, ln = 4.0A IRF8&42R _ 1.0 4 Q IRF843R : . Ors Forward Transconductance @ ALL 4.0 6.5 S(t) | Vos > loiom X Rostonmax, 10 = 4.0A Ciss Input Capacitance ALL = 1225 = PF __| Veg = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL _ 200 _ pF See Fig. 10 Cres Reverse Transfer Capacitance ALL _ 85 pe : taton Turn-On Delay Time ALL = 17 35 ns Vop = 200V, Ip = 4.0A, Zo = 4.70 te Rise Time ALL = 5 15 ns See Fig. 17 tavotn Turn-Off Delay Time ALL _ 42 90 ns (MOSFE switching times are essentially tt Fall Time ALL _ 14 30 ns independent of operating temperature.) Qe Total Gate Charge ALL _ 42 60 nc | Yes =.10V, Ip = 10A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL 20 nc essentially independent of operating Qoa__ Gate-Drain (Miller) Charge ALL _ 22 nc_| temperature.) Lo Internal Drain tnductance - 3.5 ~ nH Measured from the. Modified MOSFET contact screw on tab: symbo! showing the to center of die. internal device ALL _ 45 _ nH Measured from the inductances. o drain lead, 6mm (0.25 in.) from package to Lo center of die. Ls Internal Source Inductance ALL _ 75 _ nH Measured from the 6 source lead, 6mm us {0.25 in.) from s package to source szcy azees bonding pad. Thermal Resistance RiJdC Junction-to-Case ALL = = 10 C/W RCS Case-to-Sink ALL = 1.0 C/W | Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL _ _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF840R| _ 8.0 A Modified MOSFET symbol {Body Diode) IRF841R showing the integrat D IRF842R 0 A reverse P-N junction rectifier. inFeasR| | | lena Pulse Source Current IRF840OR| _ 32 A Sor (Body Diode) @ IRF841R IRF842R wacp ezese inFeazn| ~ | | 28 | A Vso Diode Forward Voltage IRF840R | __ _ = 90 i = . IRF841R 2.0 v Tc = 28C, Is = 8.0A, Vas = 100A/us IRF842R = = = . IRF843R _ _ 1.9 Vv Te = 25C, Is = 7.0A, Vas = 100A/us tr Reverse Recovery Time ALL 1100 ns Ty = 150C, Ie = 8.0A, dle/dt = 100A/pus Qra Reverse Recovered Charge ALL _ 6.4 = uc Ts = 150C, Ir = 8.0A, dis/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ts = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). Von = SOV, starting Ts = 25C, L = 9.1 mH, Ros = 502, Ipeak = 10A. See figures 15, 16. 6-163Rugged Power MOSFETs Ip, DRAIN CURRENT (AMPERES) Ig, DRAIN CURRENT (AMPERES) > oe Ss a Se nm Ss e 2 av = THERMAL IMPEDANCE {PER UNIT) o S Zthsclt!/ Ringe. NORMALIZED EFFECTIVE TRANSIENT 0.01 6-164 20 60 us PULSE 16 12 8 4 0 20 40 60 80 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics us PULSE TEST 2 4 6 8 Vps, ORAIN-TO-SOU ACE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics SINGLE THERMAL IMPEDANCE) i an ny on ws 2 5 103 0 100 Ip. DRAIN CURRENT (AMPERES) IRF840R, IRF841R IRF842R, IRF843R 20 us PULSE 1 . Vos> 16 g a = 21 e z a = = 5 a 2 8 < a 8s G 2 4 6 8 10 Ves, GATE-TO-SOUALE VOLTAGE {VOLTS} Fig. 2 Typical Transfer Characteristics 100 OPERATION IN THIS t AREA JS LIMITED 5 YA OT iRFBs0R, 1F BY Rasion) 20 10 5 2 10 Te = 250 05 c ot Ty= 150C MAX > Rinse 2 LOK W be et pee 02 SINGLE PULSE + 4 - traded fe thee 4 IRF841A, IRF640R, 2R 1 10 2 5 10 (20 50 100 200 00 Vos. DRAIN-TO SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area L be. ty my pao- t 7 -o4 1. DUTY FACTOR, D= . 2. PER UNIT BASE Rinse = 1.0 DEG. C/W. 3. Ty - To * Pom Ztnscit). 1-22 vot 2 5 10 2 5 10 iy, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse DurationRugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R 16.0 ns 3 80 yas PULSE TEST U 1 Vos > 'pton) Boston) max. s = ~o > wn Ty = 1509C p> o Ty = 2506 Ogg TRANSCONDUCTANCE (SIEMENS) 2 wn had ny tor. REVERSE DRAIN CURRENT {AMPERES} nm 2 S 0 4 8 2 16 20 Q i 2 3 4 5 Ip, DRAIN CURRENT (AMPERES) Vg, SOURCE-TO-DRAIN VOLTAGE VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 25 a _ o = x wn 2 wo a o o 2 a es w 8Vpsg, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Rosian). DRAIN-TO-SOURCE ON-STATE RESISTANCE (NORMALIZED) 075 0 -40 0 40 80 120 160 ~40 0 40 a0 120 160 Ty, JUNCTION TEMPERATURE (C) Tj, JUNCTION TEMPERATURE (9C} Fig. 8 Breakdown Voitage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Cisg = Cys + Cyg, Cds SHORTED Cry = Cod Cons = Cax* ES 1600 oss * de Co, + Ogg = Cds + Cyd 2 = g 3 r 1200 z 3 = a 3 8 = 3 <= 800 3 e = e 3 Ip = 104 400 8 FOR TEST CIRCUIT > SEE FIGURE 18 Coss 0 5 10 18 20 25 30 3 40 45 50 4a 20 40 60 80 Vps. ORAIN-TO-SQUACE VOLTAGE (VOLTS) Qq. TOTAL GATE CHARGE {nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-165Rugged Power MOSFETs 36 [ | { I Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING 3.0 | EFFECT OF 20,0 PULSE 1S MINIMAL.) rs | Ves= tov Y A os. 20 2.0 15 Z Boston). DRAIN-TO-SQURCE ON RESISTANCE (OHMS) LT 10 Le] Lee 0s @ 5 10 5% 2 2 oS Ip. DRAIN CURRENT (AMPERES) Fig. 12 -- Typical On-Resistance Vs. Drain Current Po. POWER DISSIPATION {WATTS) 8 8s 8 8 8&8 2 Ss a 20 a 60 80 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve 200 ADJUST Ay TO OBTAIN SPECIFIED ig sa ~ Vos Ves PULSE 7 ( but. |s one S 72. | Souace i mmenance oO = Fig. 17 Switching Time Test Circuit 6-166 sav BATTERY IRF840R, IRF841R IRF842R, IRF843R 4 IRF842R, 843R Ip. DRAIN CURRENT (AMPERES) 9 25 50 75 100 125 350 Tr. CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN put REQUIRED PEAK I, Vgg"t0V i Fre] 92CS- 42659 Fig. 15 Unclamped Energy Test Circuit 92CS- 42660 Fig. 16 Unciamped Energy Waveforms os WSOLATED SUPPLY) CURRENT REGULATOR SAME TYPE = AS DUT } a2ef + -Vos CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 18 Gate Charge Test Circuit