© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 10
Publication Order Number:
BC807−16LT1/D
1
BC807-16L, SBC80716L
BC807-25L, SBC80725L,
BC807-40L, SBC807-40L
General Purpose
Transistors
PNP Silicon
Features
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO −45 V
Collector − Base Voltage VCBO −50 V
Emitter − Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
1
2
3
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
5xx M G
G
5xx = Device Code
xx = A1, B1, or C
M = Date Code*
G=Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO −45 − − V
Collector−Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES −50 − − V
Emitter−Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO −5.0 − − V
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
−
−
−
−
−100
−5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC807−16, SBC80−16L
BC807−25, SBC807−25L
BC807−40, SBC807−40L
(IC = −500 mA, VCE = −1.0 V)
hFE
100
160
250
40
−
−
−
−
250
400
600
−
−
Collector−Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat) − − −0.7 V
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
VBE(on) − − −1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT100 − − MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cobo −10 −pF
ORDERING INFORMATION
Device Specific Marking Package Shipping†
BC807−16LT1G
5A1
SOT−23
(Pb−Free) 3000/Tape & Reel
SBC807−16LT1G
BC807−16LT3G
5A1
SOT−23
(Pb−Free) 10,000/Tape & Reel
SBC807−25LT1G
BC807−25LT1G
5B1 SOT−23
(Pb−Free) 3000/Tape & Reel
SBC807−25LT1G
BC807−25LT3G
5B1
SOT−23
(Pb−Free) 10,000/Tape & Reel
SBC807−25LT3G
BC807−40LT1G
5C SOT−23
(Pb−Free) 3000/Tape & Reel
SBC807−40LT1G
BC807−40LT3G 5C SOT−23
(Pb−Free) 10,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
http://onsemi.com
3
TYPICAL CHARACTERISTICS − BC807−16LT1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
http://onsemi.com
4
TYPICAL CHARACTERISTICS − BC807−16LT1
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
http://onsemi.com
5
TYPICAL CHARACTERISTICS − BC807−25LT1
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
10001010.1
10
100
fT
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
http://onsemi.com
6
TYPICAL CHARACTERISTICS − BC807−25LT1
IB, BASE CURRENT (mA)
Figure 13. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT (mA)
Figure 15. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
http://onsemi.com
7
TYPICAL CHARACTERISTICS − BC807−40LT1
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
200
400
600
800
1000
10.10.010.001
0.01
0.1
1
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
10001010.1
10
100
fT
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
100
300
500
700
900
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
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8
TYPICAL CHARACTERISTICS − BC807−40LT1
IB, BASE CURRENT (mA)
Figure 21. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 22. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT (mA)
Figure 23. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
http://onsemi.com
9
TYPICAL CHARACTERISTICS − BC807−16LT1, BC807−25LT1, BC807−40LT1
Figure 24. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Thermal Limit
100 mS
1 S
10 mS
1 mS
BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
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10
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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BC807−16LT1/D
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