BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features * AEC-Q101 Qualified and PPAP Capable * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc SOT-23 CASE 318 STYLE 6 Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C PD 225 1.8 mW mW/C 556 C/W Collector Current - Continuous 1 2 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA 1 PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C November, 2011 - Rev. 10 5xx = Device Code xx = A1, B1, or C M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. (c) Semiconductor Components Industries, LLC, 2011 5xx M G G 1 *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BC807-16LT1/D BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 - - V Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) V(BR)CES -50 - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V - - - - -100 -5.0 nA mA 100 160 250 40 - - - - 250 400 600 - Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ICBO ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC807-16, SBC80-16L BC807-25, SBC807-25L BC807-40, SBC807-40L (IC = -500 mA, VCE = -1.0 V) - Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0.7 V Base -Emitter On Voltage (IC = -500 mA, IB = -1.0 V) VBE(on) - - -1.2 V fT 100 - - MHz Cobo - 10 - pF SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) ORDERING INFORMATION Device BC807-16LT1G SBC807-16LT1G BC807-16LT3G SBC807-25LT1G BC807-25LT1G SBC807-25LT1G BC807-25LT3G SBC807-25LT3G BC807-40LT1G SBC807-40LT1G BC807-40LT3G Specific Marking Package Shipping 5A1 SOT-23 (Pb-Free) 3000/Tape & Reel 5A1 SOT-23 (Pb-Free) 10,000/Tape & Reel 5B1 SOT-23 (Pb-Free) 3000/Tape & Reel 5B1 SOT-23 (Pb-Free) 10,000/Tape & Reel 5C SOT-23 (Pb-Free) 3000/Tape & Reel 5C SOT-23 (Pb-Free) 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L TYPICAL CHARACTERISTICS - BC807-16LT1 500 1 400 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 1 V 150C 300 25C 200 -55C 100 0 0.001 0.01 0.01 0.1 1 Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 0.001 IC, COLLECTOR CURRENT (A) -55C IC/IB = 10 0.9 25C 0.8 150C 0.7 0.6 0.5 0.4 0.3 0.2 -55C 0.1 IC, COLLECTOR CURRENT (A) 1.1 1.0 150C 25C 0.01 1 0.1 IC/IB = 10 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 -55C 0.9 0.8 25C 0.7 0.6 150C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 1 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS - BC807-16LT1 -1.0 TJ = 25C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 5. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1.0 -0.1 -1000 Figure 6. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 4 -100 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L TYPICAL CHARACTERISTICS - BC807-25LT1 500 1 VCE = 1 V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150C 400 25C 300 200 -55C 100 0 0.001 0.01 0.01 0.1 1 Figure 8. DC Current Gain vs. Collector Current Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) -55C IC/IB = 10 25C 0.8 150C 0.7 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 -55C 0.9 0.8 25C 0.7 0.6 150C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 0.001 IC, COLLECTOR CURRENT (A) 0.9 0.2 -55C 0.1 IC, COLLECTOR CURRENT (A) 1.1 1.0 150C 25C 0.01 1 0.1 IC/IB = 10 VCE = 1 V TA = 25C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 5 1000 1 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS - BC807-25LT1 -1.0 TJ = 25C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 13. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1.0 -0.1 -1000 Figure 14. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 15. Capacitances http://onsemi.com 6 -100 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L TYPICAL CHARACTERISTICS - BC807-40LT1 1000 1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 1 V 900 150C 800 700 600 500 25C 400 300 -55C 200 100 0 0.001 0.01 0.01 0.1 1 Figure 16. DC Current Gain vs. Collector Current Figure 17. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) -55C IC/IB = 10 25C 0.8 150C 0.7 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 -55C 0.8 25C 0.7 0.6 0.5 150C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 18. Base Emitter Saturation Voltage vs. Collector Current Figure 19. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 0.001 IC, COLLECTOR CURRENT (A) 0.9 0.2 -55C 0.1 IC, COLLECTOR CURRENT (A) 1.1 1.0 150C 25C 0.01 1 0.1 IC/IB = 10 VCE = 1 V TA = 25C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 20. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 7 1000 1 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS - BC807-40LT1 -1.0 TJ = 25C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 21. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1.0 -0.1 -1000 Figure 22. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 23. Capacitances http://onsemi.com 8 -100 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L TYPICAL CHARACTERISTICS - BC807-16LT1, BC807-25LT1, BC807-40LT1 IC, COLLECTOR CURRENT (A) 1 1 mS 1S 100 mS 0.1 10 mS Thermal Limit 0.01 0.001 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 24. Safe Operating Area http://onsemi.com 9 100 BC807-16L, SBC807-16L BC807-25L, SBC807-25L, BC807-40L, SBC807-40L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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