IRFF320 - Intersil Corporation - Datasheet.Technology

File Number 1890.4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRFF320

2.5A, 400V, 1.800 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17404.

Features

• 2.5A, 400V

•r

DS(ON) = 1.800Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-205AF

Ordering Information

PART NUMBER PACKAGE BRAND

IRFF320 TO-205AF IRFF320

NOTE: When ordering, include the entire part number.

SOURCE

GATE

DRAIN

(CASE)

Data Sheet March 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRFF320 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 400 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 400 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID2.5 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 10 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS 20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD20 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 100 mJ

Operating and Storage Junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG

Temperature Range -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

pkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ= 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 400 - - V

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 2.5 - - A

Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 1.25A (Figures 8, 9) - 1.5 1.800 Ω

Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 2.0A (Figure 12) 1.7 2.2 - S

Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID≈ 2.5A, RG = 9.1Ω,

VGS = 10V, RL = 78.2Ω For VDSS = 200V,

RL = 68.2Ω For VDSS = 175V (Figures 17, 18),

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-2040ns

Rise Time tr-2550ns

Turn-Off Delay Time td(OFF) - 50 100 ns

Fall Time tf-2550ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 2.5A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is

Essentially Independent of Operating Temperature

-1215nC

Gate to Source Charge Qgs - 6.0 - nC

Gate to Drain “Miller” Charge Qgd - 6.0 - nC

Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 450 - pF

Output Capacitance COSS - 100 - pF

Reverse Transfer Capacitance CRSS -20- pF

Internal Drain Inductance LDMeasured from the Drain

Lead, 5mm (0.2in) from

Header to Center of Die

Modified MOSFET

Symbol Showing the

Internal Device

Inductances

- 5.0 - nH

Internal Source Inductance LSMeasured from the

Source Lead, 5mm

(0.2in) from Header to

Source Bonding Pad

-15-nH

Thermal Resistance Junction to Case RθJC - - 6.25 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 175 oC/W

IRFF320

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Rectifier

- - 2.5 A

Pulse Source to Drain Current

(Note 3) ISDM - - 10 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 2.5A, VGS = 0V (Figure 13) - - 1.6 V

Reverse Recovery Time trr TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs - 450 - ns

Reverse Recovered Charge QRR TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs - 3.1 - µC

NOTES:

2. Pulse test: pulse width ≤300µs, duty cycle ≤ 2%.

3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 40V, starting TJ = 25oC, L = 29.09mH, RG = 50Ω, peak IAS = 2.5A (Figures 15, 16).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (oC)

50 75 10025 150

2.5

2.0

1.5

1.0

ID, DRAIN CURRENT (A)

0.5

125

ZθJC, TRANSIENT

1.0

0.1 10-2

10-5 10-4 10-3 0.1 1 10

t1, RECTANGULAR PULSE DURATION (s)

NOTES:

DUTY FACTOR: D = t1/t2

PDM

t1t2

SINGLE PULSE

0.01

0.02

0.5

0.2

0.1

0.05

PEAK TJ = PDM x ZθJC + TC

THERMAL IMPEDANCE

IRFF320

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

110

102

OPERATION IN THIS

REGION IS LIMITED

BY rDS(ON)

0.01

ID, DRAIN CURRENT (A)

TC = 25oCDC

TJ = MAX RATED

10µs

100µs

1ms

10ms

100ms

103

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.1

SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 300

ID, DRAIN CURRENT (A)

VGS = 5V

100 200

80µs PULSE TEST

VGS = 4.5V

VGS = 4V

VGS = 5.5V

VGS = 10V

VGS = 6V

VDS, DRAIN TO SOURCE VOLTAGE (V)

4 8 12 16020

ID, DRAIN CURRENT (A)

80µs PULSE TEST

VGS = 5V

VGS = 4.5V

VGS = 4V

VGS = 5.5V

VGS = 6V

VGS = 10V VDS > ID(ON) x rDS(ON)MAX

80µs PULSE TEST

ID, ON-STATE DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0024615

TJ = 125oC

TJ = -55oC

TJ = 25oC

ID, DRAIN CURRENT (A)

24 68010

rDS(ON), DRAIN TO SOURCE

VGS = 10V

VGS = 20V

2µs PULSE TEST

ON RESISTANCE (Ω)

2.2

1.4

0.6

0 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ID = 1.25A

1.8

1.0

0.2 -40 40 80 120

VGS = 10V

ON RESISTANCE

IRFF320

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1.25

1.05

0.85

0 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

1.15

0.95

0.75-40 40 80 120

BREAKDOWN VOLTAGE

ID = 250µA

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

1000

800

600

400

200

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGS

CISS

COSS

CRSS

0203010 40 50

ID, DRAIN CURRENT (A)

246501

gfs, TRANSCONDUCTANCE (S)

80µs PULSE TEST

TJ = -55oC

TJ = 25oC

TJ = 125oC

TJ = 150oC

TJ = 25oC

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

100

1.001234

TJ = 25oC

TJ = 150oC

80µs PULSE TEST

Qg(TOT), TOTAL GATE CHARGE (nC)

4 8 12 16020

VGS, GATE TO SOURCE VOLTAGE (V)

VDS = 80V

VDS = 200V

VDS = 320V

ID = 2.5A

IRFF320

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

IG(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRFF320

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IRFF320