UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R220-002,A
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits.
*Complement to BC856 … BC860
SOT-323
12
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage
BC846
BC847 / BC850
BC848 / BC849
VCBO
80
50
30
V
Collector-Emitter Voltage
BC846
BC847 / BC850
BC848 / BC849
VCEO
65
45
30
V
Emitter-Base Voltage
BC846 / BC847
BC848 / BC849 / BC850
VEBO
6
5
V
Collector Current (DC) Ic 100 mA
Collector Dissipation Pc 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 ~ +150 °C
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R220-002,A
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=30V, IE=0 15 nA
DC Current Gain hFE VCE=5.0V, Ic=2.0mA 110 800
Collector-Emitter Saturation
Voltage VCE(sat) Ic=10mA, IB=0.5mA
Ic=100mA, IB=5.0mA
90
200
250
600 mV
Collector-Base Saturation Voltage VBE(sat) Ic=10mA, IB=0.5mA
Ic=100mA, IB=5.0mA
700
900
mV
Base-Emitter On Voltage VBE(on) VCE=5.0V, Ic=2.0mA
VCE=5.0V, Ic=10mA
580 660 700
720 mV
Current Gain Bandwidth Product fT VCE=5.0V, Ic=10mA, f=100MHz 300 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz 3.5 6 pF
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz 9 pF
Noise Figure:
BC846/BC847/BC848
BC849/BC850
BC849
BC850
NF
VCE=5V, Ic=200µA,
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA,
RG=2KΩ, f=30 ~ 15000Hz
2
1.2
1.4
1.4
10
4
4
3
dB
Classification of hFE
RANK A B C
RANGE 110-220 200-450 420-800
Marking Code
P/N RANK MARK RANK MARK RANK MARK
BC846 A 8AA B 8AB C 8AC
BC847 A 8BA B 8BB C 8BC
BC848 A 8CA B 8CB C 8CC
BC849 A 8DA B 8DB C 8DC
BC850 A 8EA B 8EB C 8EC
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R220-002,A
TYPICAL CHARACTERISTICS
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 4
QW-R220-002,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
