VISHAY
BAV99
Document Number 85718
Rev. 1.7, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
18109
12
3
Small Signal Switching Diode, Dual
Features
• Fast switching speed
• High conductance
• Surface mount package ideally suited for auto-
matic insertion
• Connected in series
Mechanical Da ta
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Ordering code Marking Remarks
BAV99 BAV99-GS18 or BAV99-GS08 JE Tape and Reel
Parameter Test condition Symbol Value Unit
Non repetitive peak reverse
voltage VRM 100 V
Repetitive peak reverse voltage
= Working peak re verse voltage
= DC Blocking volt age
VRRM = VRWM = VR70 V
Peak forward surge current tp = 1s IFSM 1A
tp = 1 µsI
FSM 4.5 A
Average forward current half wave rectification with
resistive load and f ≥ 50 MHz, on
ceramic substrate
10 mm x 8 mm x 0. 7 mm
IFAV 150 mA
Forw ard current on ceramic substrate
10 mm x 8 mm x 0. 7 mm IF250 mA
Power dissipation on ceramic substrate
10 mm x 8 mm x 0. 7 mm Ptot 300 mW
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2Document Number 85718
Rev. 1.7, 08-Jul-04
VISHAY
BAV99
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Junction ambient on ceramic substrate
10 mm x 8 mm x 0.7 mm RthJA 430 K/W
Junction and storage
temperature range Tj = Tstg - 55 to + 150 °C
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 1 mA VF715 mV
IF = 10 mA VF855 mV
IF = 50 mA VF1V
IF = 150 mA VF1.25 V
Reverse current VR = 70 V IR2.5 µA
VR = 70 V, Tj = 150 °C IR50 µA
VR = 25 V, Tj = 150 °C IR30 µA
Diode capacitance VR = 0, f = 1 MHz CD1.5 pF
Reverse recovery time IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ωtrr 6ns
Figure 1. Forward Current vs. Forward Voltage
I - Forward Current ( mA )
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
- Forward Voltage(V)
14356
F
= 100T°C
j
125°C
VISHAY
BAV99
Document Number 85718
Rev. 1.7, 08-Jul-04
Vishay Semiconductors
www.vishay.com
3
Layout for RthJA test
Thickness:
Fibergl as s 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Package Dimensions in mm (Inches)
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
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4Document Number 85718
Rev. 1.7, 08-Jul-04
VISHAY
BAV99
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
