Medium Power Transistor Description: The 2N6476, PNP General Purpose, medium power silicon transistor in a TO-220 type package designed for switching and amplifier applications. This devices is especially designed for series and shunt regulators and as a driver and output stage of high-fidelity amplifiers. Features: * Low Saturation Voltage Maximum Ratings: Characteristic Symbol Rating Unit Collector-Base Voltage VCBO Collector-Emitter Voltage (RBB = 100, VBB = 0) VCEX Collector-Emitter Voltage VCEO 120 Emitter Base Current VEBO 5 Continuous Collector Current (TC% + 106C) IC 4 A Continuous Base Current (TC% + 130C) IB 120 mA Total Device Dissipation -(TC = +100C), Derate Linearly Above 100C Total Device Dissipation -(TC = +25C), Derate Linearly Above 25C 130 V 16 0.32 PD Total Device Dissipation -(TA = +25C), Derate Linearly Above 25C 40 0.32 W W/C 1.8 0.0144 Operating Junction Temperature Range Topr Storage Temperature Range, Tstg Lead Temperature (During Soldering, 1/8" (3.17mm) from case, 10sec max) TL -65 to +150 C +235 C www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 Medium Power Transistor Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions ICEO ICER Collector Cutoff Current VCE = 60V, IB = 0 1 0.1 VCE = 120V, VBE = -1.5V, TC = +100C 2 VEB = -5V, IC = 0 1 IC = 100mA, IB = 0, (Note 2) 120 VCER(SUS) RBE = 100, IC = 100mA, (Note 2) 130 hFE IC = 1.5A, VCE = 4V, (Note 1) 15 150 IC = 4A, VCE = 2.5V, (Note 1) 2 - Base-Emitter Voltage Collector-Emitter Sustaining Voltage V - 2 IC = 4A, VCE = 2.5V, (Note 1) 3.5 - IC = 1.5A, IB = 150mA, (Note 1) VCE(Sat) V 1.2 IC = 4A, IB = 2A, (Note 1) 2.5 Small-Signal Forward Current Transfer Ratio hfe VCE = 4V, IC = 500mA, f = 1MHz 5 Gain bandwidth Product fT VCE = 4V, IC = 500mA 4 Cobo VCB = 10V, IC = 0, f = .1MHz - Collector -Base Capacitance - IC = 1.5A, VCE = 4V, (Note 1) VBE(on) mA 0.1 VCEO(SUS) DC Current Gain Unit 2 - VCE = 120V, VBE = -1.5V IEBO Collector-Emitter Sustaining Voltage Max VCE = 120V, RBE = 100 VCE = 120V, RBE = 100, TC = +100C ICEX Emitter Cutoff Current Min - MHz 250 pF Note: 1. Pulse Width = 300s, Duty Cycle %2% Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dim A B C D E F G H Min. 14.42 9.63 3.65 - 1.15 3.75 2.29 2.54 - 12.7 2.8 2.03 - Max. 16.51 10.67 4.83 0.9 1.4 3.88 2.79 3.43 0.56 14.73 4.07 2.92 31.24 Dimensions : Millimetres J K L M N O 7 Part Number Table Description Part Number Transistor, PNP, 4A, 120V, TO-220 2N6476 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 23/04/13 V1.0