SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 AUGUST 1995
PARTMARKING DETAILS
BCW60A AA BCW60AR CR
BCW60B AB BCW60BR DR
BCW60C AC BCW60CR AR
BCW60D AD BCW60DR BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 32 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC200 mA
Base Current IB50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE
Group A hFE
Group B hFE Group C hFE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 32 V IC
=2mA
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IEBO
=1µA
Collector-Emitter
Cut-off Current
ICES 20
20
nA
µA
VCES
=32V
VCES
=32V ,Tamb
=150oC
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.12
0.20
0.35
0.55
V
V
IC
=10mA, IB = 0.25mA
IC
= 50mA, IB =1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT) 0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC
=10mA, IB=0.25mA
IC
=50mA, IB=1.25mA
Base - Emitter Voltage VBE 0.55
0.52
0.65
0.78
0.75
V
V
V
IC
=10µA, VCE
=5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
hFE 120
50
78
170 220
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
20
180
70
145
250 310
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
40
250
90
220
350 460
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
100
380
100
300
500 630
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Transition Frequency fT125 250 MHz IC
=10mA, VCE
=5V
f = 100MHz
Emitter-Base Capacitance Cebo 8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance Ccbo 4.5 pF VCBO
=10V, f =1MHz
Noise Figure N 2 6 dB IC
= 0.2mA, VCE
= 5V
RG
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
IC
:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
1
R
2
R
L
50Ω
VCC(+10V)-VBB
+10V tr< 5nsec
Zin ≥ 100kΩ
Oscilloscope
1µsec
tr< 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 AUGUST 1995
PARTMARKING DETAILS
BCW60A AA BCW60AR CR
BCW60B AB BCW60BR DR
BCW60C AC BCW60CR AR
BCW60D AD BCW60DR BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 32 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC200 mA
Base Current IB50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE
Group A hFE
Group B hFE Group C hFE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 32 V IC
=2mA
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IEBO
=1µA
Collector-Emitter
Cut-off Current
ICES 20
20
nA
µA
VCES
=32V
VCES
=32V ,Tamb
=150oC
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.12
0.20
0.35
0.55
V
V
IC
=10mA, IB = 0.25mA
IC
= 50mA, IB =1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT) 0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC
=10mA, IB=0.25mA
IC
=50mA, IB=1.25mA
Base - Emitter Voltage VBE 0.55
0.52
0.65
0.78
0.75
V
V
V
IC
=10µA, VCE
=5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
hFE 120
50
78
170 220
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
20
180
70
145
250 310
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
40
250
90
220
350 460
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
100
380
100
300
500 630
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Transition Frequency fT125 250 MHz IC
=10mA, VCE
=5V
f = 100MHz
Emitter-Base Capacitance Cebo 8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance Ccbo 4.5 pF VCBO
=10V, f =1MHz
Noise Figure N 2 6 dB IC
= 0.2mA, VCE
= 5V
RG
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
IC
:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
1
R
2
R
L
50Ω
VCC(+10V)-VBB
+10V tr< 5nsec
Zin ≥ 100kΩ
Oscilloscope
1µsec
tr< 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
