IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 34 A
TC=100 °C 22
Pulsed drain current2) ID,pulse TC=25 °C 136
Avalanche energy, single pulse EAS ID=34 A, RGS=25 Ω190 mJ
Reverse diode dv/dtdv/dt10 kV/µs
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 136 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
2) See figure 3
Value
1)J-STD20 and JESD22
VDS 200 V
RDS(on),max 32 mΩ
ID34 A
Product Summary
Type IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
Package PG-TO263-3 PG-TO220-3 PG-TO262-3
Marking 320N20N 320N20N 320N20N
Rev. 2.3 page 1 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.1 K/W
RthJA minimal footprint - - 62
6 cm2 cooling area3) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 200 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=90 µA 234
Zero gate voltage drain current IDSS VDS=160 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=160 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=34 A -2832
mΩ
Gate resistance RG- 2.5 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=34 A 27 54 - S
Values
Thermal resistance, junction -
ambient
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3 page 2 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 1770 2350 pF
Output capacitance Coss - 135 180
Reverse transfer capacitance Crss -4-
Turn-on delay time td(on) -11-ns
Rise time tr-9-
Turn-off delay time td(off) -21-
Fall time tf-4-
Gate Char
g
e Characteristics4)
Gate to source charge Qgs -8-nC
Gate to drain charge Qgd -3-
Switching charge Qsw -5-
Gate charge total Qg-2229
Gate plateau voltage Vplateau - 4.4 - V
Output charge Qoss VDD=100 V, VGS=0 V -5472nC
Reverse Diode
Diode continous forward current IS- - 34 A
Diode pulse current IS,pulse - - 136
Diode forward voltage VSD VGS=0 V, IF=34 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr - 110 - ns
Reverse recovery charge Qrr - 500 - nC
4) See figure 16 for gate charge parameter definition
VR=100 V, IF=17 A,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=100 V,
VGS=10 V, ID=17 A,
RG=1.6 Ω
VDD=100 V, ID=17 A,
VGS=0 to 10 V
Rev. 2.3 page 3 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
tp [s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
160
0 50 100 150 200
TC [°C]
Ptot [W]
0
10
20
30
40
0 50 100 150 200
TC [°C]
ID [A]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID [A]
Rev. 2.3 page 4 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
7 V
10 V
0
10
20
30
40
50
60
0 10203040506070
ID [A]
RDS(on) [mΩ]
25 °C
175 °C
0
10
20
30
40
50
02468
VGS [V]
ID [A]
0
10
20
30
40
50
60
70
80
0255075
ID [A]
gfs [S]
4.5 V
5 V
7 V
10 V
0
10
20
30
40
50
60
012345
VDS [V]
ID [A]
Rev. 2.3 page 5 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=34 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98%
0
20
40
60
80
100
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
90 µA
900 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
101
102
103
104
0 40 80 120 160
VDS [V]
C [pF]
25 °C
175 °C
25°C, 98%
175°C, 98%
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev. 2.3 page 6 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=17 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
40 V
100 V
160 V
0
2
4
6
8
10
0 5 10 15 20 25
Qgate [nC]
VGS [V]
180
190
200
210
220
230
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
tAV [µs]
IAS [A]
Rev. 2.3 page 7 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO220-3: Outline
Rev. 2.3 page 8 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO263-3: Outline
Rev. 2.3 page 9 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO262-3: Outline
Rev. 2.3 page 10 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
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Rev. 2.3 page 11 2011-05-20
