2N7000
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 - - V
ΔBVDSS/
ΔTJ
Breakdown Voltage Temperature
coefficient ID = 250uA, referenced to 25 °C -48-mV/°C
IDSS Drain-Source Leakage Current VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C --
1
1000 uA
IGSS
Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA
Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 2.5 V
RDS(ON) Static Drain-Source On-state
Resistance
VGS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA
-
-
1.55
1.9
5
5.3 Ω
Dynamic Characteristics
Ciss Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-2025
pF
Coss Output Capacitance - 11 14
Crss Reverse Transfer Capacitance - 3 4
Dynamic Characteristics
td(on) Turn-on Delay Time
VDD =30V, ID =200mA, RG =50Ω
VGS = 10 V
(Note 2,3)
-418
ns
trRise Time - 2.5 15
td(off) Turn-off Delay Time - 17 44
tfFall Time - 7 24
QgTotal Gate Charge
VDS =30V, VGS =4.5V, ID =200mA
(Note 2,3)
- 0.5 0.65
nC
Qgs Gate-Source Charge - 0.15 -
Qgd Gate-Drain Charge(Miller Charge) - 0.2 -
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit.
ISMaximum Continuous Diode Forward Current - - 200 mA
VSD Diode Forward Voltage IS =200mA, VGS =0V (Note 2) --1.2V
※NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤2%
3. Essentially independent of operating temperature.
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