© 2004 IXYS All rights reserved 1 - 2
432
IXYS reserves the right to change limits, test conditions and dimensions.
DSS 40-0008D
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
TO-247 AD
A = Anode, C = Cathode , TAB = Cathode
nc = not connected
A
nc
CC (TAB)
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see Outlines.pdf
Power Schottky Rectifier IFAV = 40 A
VRRM =8 V
VF= 0.23 V
VRSM VRRM Type
V V
8 8 DSS 40-0008D
Symbol Conditions Maximum Ratings
IFRMS 70 A
IFAV TC = 135°C; rectangular, d = 0.5 40 A
IFAV TC = 135°C; rectangular, d = 0.5; per device 80 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A
EAS IAS = 40 A; L = 100 µH; TVJ = 25°C; non repetitive 80 mJ
IAR VA = 1.5 • VRRM typ.; f = 10 kHz; repetitive 4 A
(dv/dt)cr 1000 V/µs
TVJ -55...+150 °C
TVJM 150 °C
Tstg -55...+150 °C
Ptot TC = 25°C 155 W
Mdmounting torque 0.8...1.2 Nm
Weight typical 6 g
Symbol Conditions Characteristic Values
typ. max.
IRTVJ = 25°C; VR= VRRM 200 mA
TVJ = 100°C; VR= VRRM 1500 mA
VFIF = 40 A; TVJ = 125°C 0.23 V
IF = 40 A; TVJ = 25°C 0.34 V
IF = 80 A; TVJ = 125°C 0.35 V
RthJC 0.8 K/W
RthCH 0.25 K/W
AC
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© 2004 IXYS All rights reserved 2 - 2
432
IXYS reserves the right to change limits, test conditions and dimensions.
DSS 40-0008D
0.00.20.40.6
10
100
0246810
0.01
0.1
1
10
100
0 102030405060
0
5
10
15
20
25
0.001 0.01 0.1 1 10
0.1
1
04080120160
0
10
20
30
40
50
60
70
80
IF(AV)
TC
C
IF(AV)
t
s
K/W
IFSM
tP
A
0246810
10000
CT
IR
IF
A
VFVRVR
V
pF
V
A
A
P(AV)
W
ZthJC
V
DSSK 80-0008D
A
µs
TVJ =
150°C
125°C
25°C
0.08
DC
Single Pulse
TVJ= 25°C
TVJ = 150°C
3000
50°C
75°C
100°C
125°C
25°C
d = 0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
D = 0.5
0.17
0.25
0.33
5000
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
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