2N4915LEADFREE - Central Semiconductor Corp.

2N4904 2N4905 2N4906 PNP

2N4913 2N4914 2N4915 NPN

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4904, 2N4913

series types are complementary silicon power transistors,

manufactured by the epitaxial base process, designed

for general purpose amplifier and switching applications.

MARKING: FULL PART NUMBER

2N4904 2N4905 2N4906

MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N4913 2N4914 2N4915 UNITS

Collector-Base Voltage VCBO 40 60 80 V

Collector-Emitter Voltage VCEO 40 60 80 V

Emitter-Base Voltage VEBO 5.0 V

Continuous Collector Current IC 5.0 A

Continuous Base Current IB 1.0 A

Power Dissipation PD 87.5 W

Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C

Thermal Resistance JC 2.0 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

PNP NPN

SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS

ICBO V

CB=Rated VCBO - 0.1 - 1.0 mA

ICEO V

CE=Rated VCEO - 1.0 - 1.0 mA

ICEV V

CE=Rated VCEO, VBE=1.5V - 0.1 - 1.0 mA

ICEV V

CE=Rated VCEO, VBE=1.5V, TC=150°C - 2.0 - 2.0 mA

IEBO V

EB=5.0V - 1.0 - 1.0 mA

BVCEO I

C=200mA (2N4904, 2N4913) 40 - 40 - V

BVCEO I

C=200mA (2N4905, 2N4914) 60 - 60 - V

BVCEO I

C=200mA (2N4906, 2N4915) 80 - 80 - V

VCE(SAT) I

C=2.5A, IB=250mA - 1.0 - 1.0 V

VCE(SAT) I

C=5.0A, IB=1.0A - 1.5 - 1.5 V

VBE(ON) V

CE=2.0V, IC=2.5A - 1.4 - 1.4 V

hFE V

CE=2.0V, IC=2.5A 25 100 25 100

hFE V

CE=2.0V, IC=5.0A 7.0 - 7.0 -

hfe V

CE=10V, IC=500mA, f=1.0kHz 40 - 20 -

fT V

CE=10V, IC=1.0A, f=1.0MHz 4.0 - 4.0 - MHz

TO-3 CASE

R1 (7-March 2013)