GS-THOMSO A3f Sipouseromcs IRF840/FI IRF841/Fl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss | Rosin) Ip 'IRF840 500 V 0.85 0 8A IRF840F i 500 V 0.859 4.5A IRF841 450 V 0.85 Q BA IRF841Fl 450 V 0.85 QO 4.5A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING = SWITCH MODE POWER SUPPLIES (SMPS) = CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM D (2) G (1) $ (3) ABSOLUTE MAXIMUM RATINGS Symbol , ~~ Parameter Value Unit | ' IRF 840 841 840Fl | 841Fl Vos |Drain-source Voltage (Vas = 0) 500 | 450 500 450 Vv | Voar |Drain- gate Voltage (Ras = 20 kQ) 500 450 500 450 Vv Ves |Gate-source Voltage +20 Vv lp [Drain Current (cont.) at T. = 25 C 8 8 | 45 4.5 A Ip Drain Current (cont.) at Te = 100 C 5.1 5.1 2.8 2.8 A_| Ipm{*) | Drain Current (pulsed) 32 32 32 32 A | Pitot Total Dissipation at T, = 25 C 125 40 Ww Derating Factor 1 0.32 wre | | Tstg |Storage Temperature -65 to 150 c | Tj Max. Operating Junction Temperature 150 C (*) Pulse width limited by safe operating area ~ ~ May 1992 V7 239IRF840/FI - IRF841/FI THERMAL DATA TO-220 ISOWATT220 Rthj-case |Thermal Resistance Junction-case Max 1 ; 3.12 C/W Rtnj-amb |Thermal Resistance Junction-ambient Max 62.5 C/W Rthe-s | Thermal Resistance Case-sink Typ 0.5 C/W Tr Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit | lar Avalanche Current, Repetitive or Not-Repetitive 8 A: (pulse width limited by Tj max, 8 < 1%) i | Eas Single Pulse Avalanche Energy 510 i mJ (starting Tj = 25 C, Ip = lan, Vop = 25 V) Ear Repetitive Avalanche Energy ' 13 mJ L (pulse width limited by T; max, < 1%} _ | lar Avalanche Current, Repetitive or Not-Repetitive / 5.1 A | (Tc = 100 C, pulse width limited by Tj max, 6 < 1%) | ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. | Max. | Unit Vipryoss |Drain-source ln = 250 uA Ves=0 Breakdown Voltage for IRF840/840FI 500 Vv for IRF841/841FI 450 Vv loss Zero Gate Voltage Vos = Max Rating 250 HA (Drain Current (Vas = 0) |Vos = Max Rating x 0.8 T, = 125 C 1000 HA lass Gate-body Leakage Ves=+20V +100 nA Current (Vos = 0) __ ON (#) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Vasith) |Gate Threshold Voltage |Vos = Ves Ip = 250 nA 2 4 Vv Roston) |Static Drain-source On |Vas=10V Ip=4.4A 0.85 Q Resistance ID(on) On State Drain Current |Vpos > Ipion) X Rosionymax Vas = 10 V 8 A DYNAMIC Symbol | _ __ Parameter _ i Test Conditions Min. | Typ. | Max Unit Gis (*} Forward Vos > Ipon) X Ros(on)max IDp=4.4A 4.9 S$ : Transconductance Ciss Input Capacitance Vos=25V f=1MHz Vas=0 1500 pF Coss | Output Capacitance 240 pF Crss_ | Reverse Transfer 110 pF | Capacitance 2/7 ky SGS-THOMSON TF McnoEcrRowes 240ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD IRFSAQVF - "REBLT/= | Symbol Parameter Test Conditions Typ , Max. | Unit ta(on) Turn-on Time Voo=200V Ip=4A |; 5 1S tr Rise Time Ri = 4.79 | 42 ns tacott) Turn-off Delay Time (see test circuit) 100 ns te Fall Time Total Gate Charge Ip=8A Ves=10V Vop = Max Rating x 0.8 _ |(see test circuit) SOURCE DRAIN DIODE | Symbol Parameter Test Conditions Min. [ typ. | Max. [unit | Isp Source-drain Current | 8 A \som(*) |Source-drain Current | 32 A (pulsed) Forward On Voltage Isn =8A Ves =0 2 Vv Reverse Recovery Isn = 8A di/dt = 100 A/us 700 ns | Time Reverse Recovery Charge Vpo = 100 V T) = 150C () Pulsed: Pulse duration = 300 us, duty cycle 1.5 % (e) Pulse width limited by safe operating area Safe Operating Area for TO-220 Package = S & 3s as D.C. OPERATION 1 D IRF840 2 3 oF Vag (Vv) 10 k SGS-THOMSON ST7 micromectnomes 1 12 He Safe Operating Area for |SOWATT220 Package C. OPERA IRF841 IRFB40 Vag () 3/7 241IRF840/F1 - IRF841/FI Thermal Impedance for TO-220 Package 107'[o.05 Zin = k Rinse 62 t)/7 SINGLE PULSE ee] T 1907? ro 107 1078 1072 107! tp (s) Derating Curve for TO-220 Package Prot (W) 120 BO 40 Oo 50 100 Toose (C) Output Characteristics GE3506D Ip(A) 6.5V Thermal Impedance for ISOWATT220 Package 0.05 0.02 0.01 Zm = kK Rintwe SINGLE PULSE o> tefr o-| 104 107 1073 10? 107! 10 4, (s) Derating Curve for ISOWATT220 Package Prot (W) 40 30 20 D 40 80 = 120 Toose (C0) Output Characteristics Ip (A) 16 4 8 5.5V 2 4 ~ 4V 4.5V Av 0 2 4 6 B Y<() 0 10 20 30 40 Vps (V) 4/7 G7 SGS-THOMSON MICROELECTRONICS 242Transfer Characteristics Ip (A) 16 0 2 4 6 8 Vos (V) Static Drain-source On Resistance Roston) Q 2.0 0.5 QO 4 8 12 16 Ip(A) Gate Charge vs Gate-source Voltage Ves () 10 Vag = 400V 0 20 40 60 80 100 Q,(nc) f SGS-THOMSON on sf scs-THOMsON PESLO/S - ERA /= Transconductance out) 1 Vos >! dion) XR ostanjine>_ 12 10 0 2 4 6 8 10 12 1,(A) Me imum Drain Current vs Temperature 1pfA) 0 25 50 73 100 125 -T, (C) Capacitance Variations C(p*) 2000 1500 1000 500 0 10 20 30 40 Vos(V) 8/7 243 snIRF840/FI - |RF841/FI Normalized Breakdown Voltage vs Temperature VcBR)DSs (narm) Vgs=0 Ip =250uA 0.9 0.8 ~-50 Q 50 100 T, (C) Source-drain Diode Forward Characteristics GC22440 Isp (A) 16 -40C 04 06 O8 1.0 1.2 Vep{V) Unclamped Inductive Load Test Circuit Normalized On Resistance vs Temperature GC224350 Ropscan) (norm) 2.0 0.8 0.4 -50 0 50 100 T, (%) Unclamped Inductive Waveforms 2200 5.3 ue we Yoo H o ' { 3 oT 1 D . o 0.U.T. scos970 Viar)oss 244 i SGS-THOMSON TF icrotiectnomes"RERLQ/T - IRE RLF Switching Time Test Circuit Gate Charge Test Circuit C ar tay wk k ]ra i iconr R, 2200 | 3.3 L. Ty BE we v _ Vp _ 1 1=CONSI TL ve = V; =20V=Veuax 100.0 1 out _ Re = |_| ion mer. ve Pw _ scosss0 JL ae Pw coon V7 K57 $GS-THOMSON a MIGROELECTRONICS 245