MBRS20HCTC 20.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 20.0 A Voltage 100 to 200 V FEATURES Low leakage current Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High frequency operation High forward surge current capability Solder dip 260C, 10s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C TO-263AB / D2PAK 4 1 2 MECHANICAL DATA Case: TO-263AB / D2PAK molded plastic. Epoxy meets UL 94V-0 flammability rating. Polarity: As marked Terminals : Matte tin plated leads, solderable per MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102. Consumer grade, meets JESD 201 class 1A whisker test. HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test. 3 PIN 1 PIN 3 CASE PIN 4 TYPICAL APPLICATIONS Used in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. Maximun Ratings and Electrical Characteristics at 25C Marking Code VRRM Maximum Recurrent Peak Reverse Voltage (V) VRMS Maximum RMS Voltage (V) VDC Maximum DC Blocking Voltage (V) Maximum Average Forward Rectified Current at TC=125C Peak Forward Surge Current, 8.3 ms Single Half sine-wave Superimposed on Rated Load (JEDEC Method) Peak Repetitive Reverse Surge Current Operating Junction Temperature Range IF (AV) IFSM IRRM Tj Tstg MBRS 20H100CTC MBRS 20H150CTC MBRS 20H200CTC MBRS20H100CTC MBRS20H150CTC MBRS20H200CTC 100 150 200 70 105 140 100 150 200 20 A 150 A 1.0 A 0.5 A 65 to + 175 C 65 to + 175 C Storage Temperature Range Electrical Characteristics at Tamb = 25 C VF IR Rthj-c Maximum Instantaneous Forward Voltage at (Note 1) IF = 10 A, Tj = 25 C IF = 10 A, Tj = 125 C IF = 20 A, Tj = 25 C IF = 20 A, Tj = 125 C Max. Instantaneous Reverse Current @ Tj=25C at Rated DC Blocking Voltage (Note 3) @ Tj=125C Maximum Typical Thermal Resistance (Note 2) 0.85 V 0.75 V 0.95 V 0.85 V 5 A 2.0 mA 1.5 C/W 0.88 V 0.75 V 0.97 V 0.85 V Notes: 1. Pulse Test: 300 Pulse Width, 1% Duty Cycle 2. Thermal Resistance from Junction to Case per diode 3. Pulse test: Pulse width 40ms www.fagorelectronica.com Document Name: mbrs20hctc Version: Nov-11 Page Number: 1/5 MBRS20HCTC 20.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Ordering information PREFERRED P/N PACKAGE CODE DELIVERY MODE BASE QUANTITY UNIT WEIGHT (g) MBRS20H150CTC 00TRC TR 13" diameter tape and reel 800 1.45 MBRS20H150CTC 00 HE3 TRC TR 13" diameter tape and reel 800 1.45 MBRS20H150CTC 00TUC TU TUBE 1000 1.45 MBRS20H150CTC 00 HE3 TUC TU TUBE 1000 1.45 Package Outline Dimensions: (mm) TO-263AB / D2PAK 4.7 4.10 15.88 14.6 MC WWY 10.66 MIN. 1.65 MAX.. Marking code 9.25 8.25 8.38 MIN. Year code 2.79 1.78 Week code 0.53 0.36 2.67 2.41 0.94 0.68 www.fagorelectronica.com Document Name: mbrs20hctc Mounting Pad Layout 1.4 1.14 10.5 MAX. 2.79 2.03 17.02 15.00 3.81 MIN. 2.032 MIN. 2.67 2.41 Version: Nov-11 Page Number: 2/5 MBRS20HCTC 20.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Ratings and Characteristics (Ta 25 C unless otherwise noted) TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER DIODE FORWARD CURRENT DERATING CURVE 20 RESISTIVE OR INDUCTIVE LOAD 10 Tj = 125 C IF(AV), average forward current (A) IF, instantaneous forward current (A) 40 Tj = 25 C 1 0.1 16 12 8 4 PULSE WIDTH = 300 s 1% DUTY CYCLE 0.01 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 25 VF, forward voltage (V) 5000 Tj = 25 C f = 1.0 MHz Vsig = 50mVp-p Cj, junction capacitance (pF) IFSM, peak forward surge current (A) TYPICAL JUNCTION CAPACITANCE PER DIODE Tj = Tj max. 8.3ms Single Half Sine-Wave (JEDEC Method) 125 75 100 125 150 175 TC, case temperature (C) MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER DIODE 150 100 75 50 25 0 50 2000 1000 500 200 1 10 Number of cycles at 60 Hz. www.fagorelectronica.com Document Name: mbrs20hctc 100 100 0.1 1 10 100 VR, reverse voltage (V) Version: Nov-11 Page Number: 3/5 MBRS20HCTC 20.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Ratings and Characteristics (Ta 25 C unless otherwise noted) TYPICAL REVERSE CHARACTERISTICS PER DIODE TYPICAL TRANSIENT THERMAL IMPEDANCE PER DIODE 100 1 Tj = 125 C 0.1 Tj = 75 C 0.01 Tj = 25 C 0.001 0.0001 0 20 40 60 80 100 120 140 Percent of rated peak reverse voltage (%) www.fagorelectronica.com Document Name: mbrs20hctc Transient thermal impedance (C/W) IR, instantaneous reverse current (mA) 5 10 1 0.1 0.01 0.1 1 10 100 t, Pulse durantion (sec.) Version: Nov-11 Page Number: 4/5 MBRS20H100CT ....... MBRS20H200CT 20.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Disclaimer All product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. 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