HITANO ENTERPRISE CORP.
BY251 THRU BY255
TECHNICAL
SPECIFICATIONS
OF
SILICON
RECTIFIER
VOLTAGE
RANGE
-
200
to
1300
Volts
CURRENT
-
3.0
Amperes
FEATURES
* Low cost
* Low leakage
* Low fo rward v oltag e drop
* High curre nt capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 1.18 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise speci fied.
Single phase, half wave, 60 Hz, resistive or inductive
load.
For capacitive load, derate current by 20%.
Dimensions
in
inches
and
(millimeters)
DO-27
SYMBOL
BY251 BY252 BY253 BY254 BY255
UNITS
Maximum
Recurrent
Peak
Reverse
Voltage
V
RRM
200 400 600 800 1300
Volts
Maximum
RMS
Voltage
V
RMS
140 280 420 560 910
Volts
Maximum
DC
Blocking
Voltage
V
DC
200 400 600 800 1300
Volts
Maximum
Average
Forward
Rectified
Current
.375*(9.5mm)
lead
length
at
T
L
=
105
o
C
I
O
3.0
Amps
Peak
Forward
Surge
Current
8.3
ms
single
half
sine-wave
su
erim
osed
on
rated
load
JEDEC
Method
I
FSM
200
Amps
Maximum
Instantaneous
Forward
Volta
e
at 3.0A
DC
V
F
1.1
Volts
@T
A
=
25
o
C
5.0
Maximum
DC
Reverse
Current
at
Rated
DC
Blocking
Voltage
@T
A
=
100
o
C
500
uAmps
Maximum
Full
Load
Reverse
Current
Average,
Full
Cycle
.375*(9.5mm)
lead
length
at
T
L
=
75
o
C
I
R
30
uAmps
Typical
Junction
Capacitance
(Note)
C
J
40
pF
Typical
Thermal
Resistance
R
θ
JA
30
0
C/
W
Operating
and
Storage
Temperature
Range
T
J
,
T
STG
-65
to
+
175
0
C
NOTES
:
Measured
at
1
MH
Z
and
applied
reverse
voltage
of
4.0
volts