MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. NPN SILICON BIAS RESISTOR TRANSISTORS Features * * * * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 - Machine Model: Class B The SC-59 Package can be Soldered Using Wave or Reflow The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die AEC-Q101 Qualified and PPAP Capable S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* SC-59 CASE 318D STYLE 1 PIN 2 BASE (INPUT) R2 PIN 1 EMITTER (GROUND) 8x M G G 1 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current R1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating PIN 3 COLLECTOR (OUTPUT) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 8x M G = Device Code (Refer to page 2) = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the Device Marking and Resistor Values table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 15 1 Publication Order Number: MUN2211T1/D MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25C PD Derate above 25C Max Unit 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW C/W Thermal Resistance, Junction-to-Ambient RqJA 540 (Note 1) 370 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 264 (Note 1) 287 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 inch Pad. DEVICE MARKING AND RESISTOR VALUES Device MUN2211T1 MUN2211T1G, SMUN2211T1G MUN2211T3 MUN2211T3G, SMUN2211T3G MUN2212T1 MUN2212T1G, SMUN2212T1G, NSVMUN2212T1G MUN2213T1 MUN2213T1G, SMUN2213T1G MUN2214T1 MUN2214T1G, SMUN2214T1G MUN2214T3 MUN2214T3G, SMUN2214T3G MUN2215T1 MUN2215T1G MUN2216T1 MUN2216T1G, SMUN2216T1G MUN2230T1 MUN2230T1G, SMUN2230T1G MUN2231T1 (Note 3) MUN2231T1G (Note 3) MUN2232T1 MUN2232T1G, SMUN2232T1G MUN2233T1 MUN2233T1G, NSVMUN2233T1G MUN2234T1 (Note 3) Package Marking R1 (K) R2 (K) Shipping SC-59 8A 10 10 3,000/Tape & Reel SC-59 (Pb-Free) 8A 10 10 3,000/Tape & Reel SC-59 8A 10 10 10,000/Tape & Reel SC-59 (Pb-Free) 8A 10 10 10,000/Tape & Reel SC-59 8B 22 22 3,000/Tape & Reel SC-59 (Pb-Free) 8B 22 22 3,000/Tape & Reel SC-59 8C 47 47 3,000/Tape & Reel SC-59 (Pb-Free) 8C 47 47 3,000/Tape & Reel SC-59 8D 10 47 3,000/Tape & Reel SC-59 (Pb-Free) 8D 10 47 3,000/Tape & Reel SC-59 8D 10 47 10,000/Tape & Reel SC-59 (Pb-Free) 8D 10 47 10,000/Tape & Reel SC-59 8E 10 3,000/Tape & Reel SC-59 (Pb-Free) 8E 10 3,000/Tape & Reel SC-59 8F 4.7 3,000/Tape & Reel SC-59 (Pb-Free) 8F 4.7 3,000/Tape & Reel SC-59 8G 1.0 1.0 3,000/Tape & Reel SC-59 (Pb-Free) 8G 1.0 1.0 3,000/Tape & Reel SC-59 8H 2.2 2.2 3,000/Tape & Reel SC-59 (Pb-Free) 8H 2.2 2.2 3,000/Tape & Reel SC-59 8J 4.7 4.7 3,000/Tape & Reel SC-59 (Pb-Free) 8J 4.7 4.7 3,000/Tape & Reel SC-59 8K 4.7 47 3,000/Tape & Reel SC-59 (Pb-Free) 8K 4.7 47 3,000/Tape & Reel SC-59 8L 22 47 3,000/Tape & Reel http://onsemi.com 2 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES MUN2234T1G (Note 3) MUN2236T1 MUN2236T1G MUN2237T1 MUN2237T1G MUN2240T1 (Note 3) MUN2240T1G, SMUN2240T1G (Note 3) MUN2241T1 (Note 3) MUN2241T1G (Note 3) SC-59 (Pb-Free) 8L 22 47 3,000/Tape & Reel SC-59 8N 100 100 3,000/Tape & Reel SC-59 (Pb-Free) 8N 100 100 3,000/Tape & Reel SC-59 8P 47 22 3,000/Tape & Reel SC-59 (Pb-Free) 8P 47 22 3,000/Tape & Reel SC-59 8T 47 3,000/Tape & Reel SC-59 (Pb-Free) 8T 47 3,000/Tape & Reel SC-59 8U 100 3,000/Tape & Reel SC-59 (Pb-Free) 8U 100 3,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 3 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1, SMUN2211T1 MUN2212T1, SMUN2212T1, NSVMUN2212T1 MUN2213T1, SMUN2213T1 MUN2214T1, SMUN2214T1 MUN2215T1 MUN2216T1, SMUN2216T1 MUN2230T1, SMUN2230T1 MUN2231T1 MUN2232T1, SMUN2232T1 MUN2233T1, NSVMUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1, SMUN2240T1 MUN2241T1 IEBO Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc mAdc - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 50 - - 50 - - 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 - - - - - - - - - - - - - - - Vdc Vdc ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1, SMUN2211T1 MUN2212T1, SMUN2212T1, NSVMUN2212T1 MUN2213T1, SMUN2213T1 MUN2214T1, SMUN2214T1 MUN2215T1 MUN2216T1, SMUN2216T1 MUN2230T1, SMUN2230T1 MUN2231T1 MUN2232T1, SMUN2232T1 MUN2233T1, NSVMUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1, SMUN2240T1 MUN2241T1 hFE Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MUN2211T1, SMUN2211T1 MUN2212T1, SMUN2212T1, NSVMUN2212T1 MUN2213T1, SMUN2213T1 MUN2214T1, SMUN2214T1 MUN2236T1 (IC = 10 mA, IB = 5 mA) MUN2230T1, SMUN2230T1 MUN2231T1 MUN2237T1 MUN2241T1 (IC = 10 mA, IB = 1 mA) MUN2215T1 MUN2216T1, SMUN2216T1 MUN2232T1, SMUN2232T1 MUN2233T1, NSVMUN2233T1 MUN2234T1 MUN2240T1, SMUN2240T1 VCE(sat) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 4 Vdc - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 - - - - - - - - 0.25 0.25 0.25 0.25 - - - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 0.25 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max Unit ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN2211T1, SMUN2211T1 MUN2212T1, SMUN2212T1, NSVMUN2212T1 MUN2214T1, SMUN2214T1 MUN2215T1 MUN2216T1, SMUN2216T1 MUN2230T1, SMUN2230T1 MUN2231T1 MUN2232T1, SMUN2232T1 MUN2233T1, NSVMUN2233T1 MUN2234T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MUN2213T1, SMUN2213T1 MUN2240T1, SMUN2240T1 (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) MUN2236T1 (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) MUN2237T1 (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) MUN2241T1 VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN2211T1, SMUN2211T1 MUN2212T1, SMUN2212T1, NSVMUN2212T1 MUN2213T1, SMUN2213T1 MUN2214T1, SMUN2214T1 MUN2233T1, NSVMUN2233T1 MUN2234T1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN2230T1, SMUN2230T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN2215T1 MUN2216T1, SMUN2216T1 MUN2231T1 MUN2232T1, SMUN2232T1 MUN2236T1 MUN2237T1 MUN2240T1, SMUN2240T1 MUN2241T1 VOH http://onsemi.com 5 Vdc - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - - - - 0.2 0.2 - - 0.2 - - 0.2 - - 0.2 Vdc 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - 4.9 - - 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - - - - - MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 130 0.8 0.8 0.8 0.17 - - 0.8 0.8 0.8 0.055 0.38 0.8 1.7 - - 1.0 1.0 1.0 0.21 - - 1.0 1.0 1.0 0.12 0.47 1.0 2.15 - - 1.2 1.2 1.2 0.25 - - 1.2 1.2 1.2 0.185 0.56 1.2 2.6 - - Unit ON CHARACTERISTICS (Note 5) (Continued) Input Resistor MUN2211T1, SMUN2211T1 MUN2212T1, SMUN2212T1, NSVMUN2212T1 MUN2213T1, SMUN2213T1 MUN2214T1, SMUN2214T1 MUN2215T1 MUN2216T1, SMUN2216T1 MUN2230T1, SMUN2230T1 MUN2231T1 MUN2232T1, SMUN2232T1 MUN2233T1, NSVMUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1, SMUN2240T1 MUN2241T1 R1 Resistor Ratio MUN2211T1, SMUN2211T1 MUN2212T1, SMUN2212T1, NSVMUN2212T1 MUN2213T1, SMUN2213T1 MUN2214T1, SMUN2214T1 MUN2215T1 MUN2216T1, SMUN2216T1 MUN2230T1, SMUN2230T1 MUN2231T1 MUN2232T1, SMUN2232T1 MUN2233T1, NSVMUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1, SMUN2240T1 MUN2241T1 R1/R2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 RqJA = 370C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 6 150 kW MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1 1000 IC/IB = 10 VCE = 10 V TA=-25C 25C 75C 0.1 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1, SMUN2211T1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz IE = 0 V TA = 25C 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25C 10 0 Figure 4. Output Capacitance 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) TA=-25C VO = 0.2 V 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 7 50 10 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1000 1 IC/IB = 10 VCE = 10 V TA=-25C TA=75C 25C 25C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1, SMUN2212T1, NSVMUN2212T1 75C 0.1 0.01 -25C 100 10 0.001 40 20 60 IC, COLLECTOR CURRENT (mA) 0 80 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 0.001 50 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 3 100 10 TA=-25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 8 50 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 10 1000 TA=-25C IC/IB = 10 25C 1 VCE = 10 V TA=75C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1, SMUN2213T1 75C 0.1 25C -25C 100 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 10 80 10 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=-25C 10 1 0.1 0.01 0.2 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 0.6 0 25C 75C f = 1 MHz IE = 0 V TA = 25C 0.8 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 9 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 300 1 TA=-25C IC/IB = 10 TA=75C VCE = 10 250 25C hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1, SMUN2214T1 0.1 75C 0.01 25C 200 -25C 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC 100 75C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25C TA=-25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=-25C VO= 0.2 V 25C 75C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 10 50 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 75C 10 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 24. Output Capacitance 25C 1 TA = -25C 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 25C 75C VO = 0.2 V 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 4.5 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2215T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 11 50 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1 1000 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25C 25C 100 10 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 29. Output Capacitance 75C 10 25C TA = -25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 3.5 100 Figure 28. DC Current Gain 4.5 4 VCE = 10 V 75C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2216T1, SMUN2216T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 12 50 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2230T1, SMUN2230T1 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 25C TA = -25C VCE = 10 V 1 50 75C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 34. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 4 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 13 50 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2232T1, SMUN2232T1 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = -25C 10 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 39. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 38. DC Current Gain 6 0 25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 14 50 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2233T1, NSVMUN2233T1 75C -25C 25C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75C 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25C 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 44. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3 100 Figure 43. DC Current Gain 4 3.5 25C 10 1 30 TA = -25C 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 15 25 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1 25C 75C 0.1 0.01 75C TA = -25C 100 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 47. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 49. Output Capacitance 75C TA = -25C 10 25C 1 0.1 VO = 5 V 0 VO = 0.2 V 5 15 20 25 30 10 Vin, INPUT VOLTAGE (VOLTS) 25C TA = -25C 75C 10 1 0.1 0 5 35 40 Figure 50. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 V TA = 25C 4 100 Figure 48. DC Current Gain 5 4.5 25C 10 20 15 25 IC, COLLECTOR CURRENT (mA) 30 Figure 51. Input Voltage versus Output Current http://onsemi.com 16 35 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 75C TA = -25C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1 25C 75C 0.1 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) TA = -25C 100 35 10 1 40 1 Figure 53. DC Current Gain 2 100 IC, COLLECTOR CURRENT (mA) 1.6 1.4 1.2 1 0.8 0.6 f = 1 MHz lE = 0 V TA = 25C 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 54. Output Capacitance 75C TA = -25C 10 25C 1 0.1 0.01 0.001 VO = 5 V 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 75C 10 1 0 5 14 16 Figure 55. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.8 0.2 0 100 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC 0.4 25C 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 Figure 56. Input Voltage versus Output Current http://onsemi.com 17 40 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 57. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 58. Open Collector Inverter: Inverts the Input Signal Figure 59. Inexpensive, Unregulated Current Source http://onsemi.com 18 MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series PACKAGE DIMENSIONS SC-59 CASE 318D-04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 E 1 DIM A A1 b c D E e L HE b e C A MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR L A1 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 SCALE 10:1 mm inches 0.8 0.031 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 19 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUN2211T1/D