Aner FAIRCHILD SEMICONDUCTOR ay Dep 3469674 Oo2791n0 5 Z CC IRF350-353 FAIRCHILD N-channel Power MOSFETs, A Schlumberger Company 15 A, 350 V/ 400 V 7-39-13 ; ; Power And Discrete Division i | Description TO-204AA ' These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed S ~ applications, such as off-line switching power supplies, l UPS, AC and DC motor controls, relay and solenoid drivers. @ Ves Rated at +20 V Y 8 i @ Silicon Gate for Fast Switching Speeds ss00020 i Ipss, Vos(on) SOA and Vegitn) Specified at Elevated i IRF350 i Temperature IRF351 t { Rugged t I IRF352 j Maximum Ratings IRF353 5 Rating Rating : Symbol! Characteristic IRF350/352 IRF351/353 Unit i Voss Drain to Source Voltage 400 350 Vv : Vper Drain to Gate Voltage 400 350 v Res = 1.0 MQ Ves Gate to Source Voltage +20 +20 Vv Ty, Tstg | Operating Junction and -55 to +150 -55 to +150 C Storage Temperatures TL Maximum Lead Temperature 275 275 C for Soldering Purposes, 1/8 From Case for 5 s Maximum On-State Characteristics {RF350/351 IRF352/353 Roson) | Static Drain-to-Source 0.3 0.4 2 On Resistance Ip Drain Current A Continuous 15 13 Pulsed 60 52 Maximum Thermal Characteristics Rac Thermal Resistance, 0.83 0.83 C/W Junction to Case Pp . Total Power Dissipation 150 150 Ww at Tg = 25C Y Notes For information concerning connection diagram and package outline, refer to Section 7. 2-123FAIRCHILD SEMICONDUCTOR f By DE Bp 3469674 ooa74511 7 ft i a | IRF350-353 T-39-13 i Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol! Characteristic | Min | Max Unit | Test Conditions | Off Characteristics Vianyoss | Drain Source Breakdown Voltage! Vv Ves =0 V, ip =250 yA IRF350/352 400 IRF351/353 350 loss Zero Gate Voltage Drain Current 250 vA Vos = Rated Voss, Veg =0 V 1000 BA Vps = 0.8 x Rated Vpss, Veg =0 V, Te = 128C lass Gate-Body Leakage Current +100 nA Vas = 20 V, Vos =0 V On Characteristics Vesah) Gate Threshold Voltage 2.0 4.0 Vv Ip = 250 wA, Vos = Ves Rogion) | Static Drain-Source On-Resistance 2 Veg=10 V, Ip=B0A IRF350/351 0.3 IRF352/353 0.4 : i Gis Forward Transconductance 8.0 Ss &) Vps = 10 V, Ip =8.0 A : Dynamic Characteristics Ciss Input Capacitance 3000 pF Vos = 25 V, Vag =0 V Coss Output Capacitance 600 pF f= 1.0 MHz i Ciss Reverse Transfer Capacitance 200 pF Switching Characteristics (To = 25C, Figures 9, 10) tacon) Turn-On Delay Time 36 ns Vpp = 180 V, Ip =8.0 A : t Rise Time 65 ns Ros = he \y Raen = 4.7 Q tarot Turn-Off Delay Time 150 ns t Fall Time 75 ns Qg Total Gate Charge 120 nc Vas=10 V, Ip=16A Vpp = 400 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF360/351 1.6 v Ig =15 Ai Veg =0 V IRF352/353 1.5 Vv Ig =13 A; Veg =0 V tr Reverse Recovery Time 600 ns Ig = 15 A; dig/dt = 100 A/uS Notes 41, Ty = +28C to +150C 2. Pulse test: Pulse width <80 us, Duty cycle <1% 2-124FAIRCHILD SEMICONDUCTOR a4 DEB sues74 Ooazqu2 9 IRF350-353 T-39-13 Typical Performance Curves Figure 1 Output Characteristics a 16 Ip DRAIN CURRENTA Q 1 2 a 4 5 6 7 VosORAIN TO SOURCE VOLTAGE-V POLUSSOF Figure 3 Transfer Characteristics 20 18 Ip DRAIN CURRENT~-A 5 0 1 2 3 4 5 6 7 Vas-~-GATE TO SOURCE VOLTAGEV PCIO6EOF Figure 5 Capacitance vs Drain to Source Voltage wv % C-CAPACITANCEpF ~ 2 10 1 5 10 50 100 Vos DRAIN TO SOURCE VOLTAGE~V Pcreeeoe Figure 2 Static Drain to Source On Resistance vs Drain Current 07 =10V 0.6 0.5 0.4 03 RESISTANCE 02 RosonySTATIC DRAIN TO SOURCE 0.1 0 4 & 12 16 20 IpDRAIN CURRENTA Pctos7ar Figure 4 Temperature Variation of Gate to Source Threshold Voltage NORMALIZED GATE THRESHOLD VOLTAGE -50 a 50 100 150 T,JUNCTION TEMPERATURE*C PCose4 1 Figure 6 Gate to Source Voltage vs Total Gate Charge Voo = 400V lo=16A Ty = 25C Vas GATE TO SOURCE VOLTAGEV o 20 40 60 80 100 QgTOTAL GATE CHARGEnc PC10700F 2-125mer 4 FAIRCHILD SEMICONDUCTOR ay De 3469674 ooe79d14 oO a IRF350-353 T=39~13 Typical Performance Curves (Cont.) Figure 7 forward Biased Safe Operating Area 0 5 2 fot 5 2 1 ipDRAIN CURRENTA Ti Ty< 150C 2 SINGLE PULSE == = CURRENT LIMITED 10-1 Ww 2 5 108 2 5 @ 2 5 103 VosDRAIN TO SOURCE VOLTAGEV eci1620F Typica! Electrical Characteristics Figure 9 Switching Test Circuit Vin Voo AL PULSE GENERATOR Vout DUT - Res ? conocer Figure 8 Transient Thermal Resistance vs Time -3 a bre | wt a Duty Factor, O = 2 O curves apply to train of heating pulses Taman = Te + Pw 2Zmu-c-- TRANSIENT THERMAL RESISTANCE S/W S a 10-1 1 10' we 10 10+ tTHMEme PCLOTIOF Figure 10 Switching Waveforms OUTPUT, Vout INVERTED | 50% 50% + 10% PULSE WIDTH INPUT, Vin 2-126 pr ernme mort