NPN Silicon AF Transistors BC 337 BC 338 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 327, BC 328 (PNP) 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 - Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 1) Pin Configuration 1 2 3 C B E 3 Package1) TO-92 For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 337 BC 338 Maximum Ratings Parameter Symbol Values BC 337 BC 338 Unit V Collector-emitter voltage VCE0 45 25 Collector-base voltage VCB0 50 30 Emitter-base voltage VEB0 Collector current IC 800 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 66 C Ptot 625 mW Junction temperature Tj 150 C Storage temperature range Tstg 5 mA A mA - 65 ... + 150 Thermal Resistance Junction - ambient Rth JA 200 Junction - case1) Rth JC 135 1) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 2 K/W BC 337 BC 338 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 337 BC 338 V(BR)CE0 Collector-base breakdown voltage IC = 100 A V(BR)CB0 BC 337 BC 338 Emitter-base breakdown voltage IE = 10 A V(BR)EB0 Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 C VCB = 45 V, TA = 150 C ICB0 BC 338 BC 337 BC 338 BC 337 Emitter cutoff current VEB = 4 V IEB0 DC current gain1) IC = 100 mA; VCE = 1 V hFE V 45 25 - - - - 50 30 - - - - 5 - - - - - - - - - - 100 100 10 10 nA nA A A - - 100 nA - BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 100 160 250 160 250 350 250 400 630 BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 60 100 170 - - - - - - IC = 300 mA; VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VCEsat - - 0.7 Base-emitter saturation voltage IC = 500 mA; IB = 50 mA VBEsat - - 2 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 3 V BC 337 BC 338 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT - 170 - MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo - 8 - pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo - 60 - Semiconductor Group 4 BC 337 BC 338 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 1 V Collector cutoff current ICB0 = f (TA) VCB = 45 V Semiconductor Group 5 BC 337 BC 338 DC current gain hFE = f (IC) VCE = 1 V Transition frequency fT = f (IC) f = 20 MHz, TA = 25 C Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Base-emitter saturation voltage VBEsat = f (IC) hFE = 10 Semiconductor Group 6