CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1308060 Version: K13
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-220AB
MECHANICAL DATA
Case: TO-220AB
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
MBR
1035
CT
MBR
1045
CT
MBR
1050
CT
MBR
1060
CT
MBR
1090
CT
MBR
10100
CT
MBR
10150
CT
MBR
10200
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
10.5
Maximum DC blocking voltage
Maximum average forward rectified current 10
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz) I
FRM
10 A
0.80
V0.57 0.65
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
120 A
Peak repetitive reverse surge current (Note 1)
0.1
0.70 0.80 0.85 0.88
0.90 0.95 0.98
0.67 0.85 0.88
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25℃
I
F
= 5 A, T
J
=125℃
I
F
= 10 A, T
J
=25℃
I
F
= 10 A, T
J
=125℃
V
F
Operating junction temperature range - 55 to +150
0.75 0.78
mA
15 10
Voltage rate of change (Rated V
R
)10000
0.75
Storage temperature range - 55 to +150
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
25
1.5Typical thermal resistance
PART NO.
PART NO.
MBR1060CT
MBR1060CT
MBR1060CT
(TA=25℃ unless otherwise noted)
Document Number: DS_D1308060 Version: K13
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
TO-220AB
DESCRIPTION
Note 1: "xx" defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT)
MBR10xxCT
(Note 1) Prefix "H" C0 Suffix "G" 50 / Tube
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
MBR1060CT C0 C0
MBR1060CT C0G
PACKING CODE GREEN COMPOUND
CODE
MBR1060CTHC0 H C0
C0 G
0
1
2
3
4
5
6
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1- FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0
30
60
90
120
150
180
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
TJ=75℃
TJ=125℃
TJ=25℃
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300μs
1% Duty Cycle
MBR1050CT-1060CT
MBR1035CT-1045CT
MBR1090CT-10100CT
MBR10150-10200CT
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1308060 Version: K13
MARKING DIAGRAM
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION. (sec)
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308060 Version: K13
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
