©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD433/435/437
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD433
: BD435
: BD437
22
32
45
V
V
V
VCES Collector-Emitter Voltage: BD433
: BD435
: BD437
22
32
45
V
V
V
VCEO Collector-Emitter Voltage: BD433
: BD435
: BD437
22
32
45
V
V
V
VEBO Emitter-Base Volt age 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 7 A
IB Base Current 1 A
PC Collector Dissipation (TC=25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Temperatu re - 65 ~ 150 °C
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
BD433/435/437
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD433/435/437
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbo l Param eter Test Co nd it io n Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: BD433
: BD435
: BD437
IC = 100mA, IB = 0 22
32
45
V
V
V
ICBO Collector Cut-off Current : BD433
: BD435
: BD437
VCB = 22V, IE = 0
VCB = 32V, IE = 0
VCB = 45V, IE = 0
100
100
100
µA
µA
µA
ICEO Collector Cut-off Current : BD433
: BD435
: BD437
VCE = 22V, VBE = 0
VCE = 32V, VBE = 0
VCE = 45V, VBE = 0
100
100
100
µA
µA
µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain : BD433/435
: BD437
: ALL DEVICE
: BD433/435
: BD437
VCE = 5V, IC = 10mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 2A
40
30
85
50
40
130
130
140
VCE(sat) * Collector-Emitter Saturation Voltage
: BD433
: BD435
: BD437
IC = 2A, IB = 0.2A 0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
VBE(on) * Base-Emitter ON Voltage
: BD433
: BD435
: BD437
VCE = 1V, IC = 2A 1.1
1.1
1.2
V
V
V
fTCurrent Gain Bandwidth Produc t VCE = 1V , IC = 250mA 3 MHz
©2001 Fairchild Semiconductor Corporation
BD433/435/437
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.01 0.1 1 10 100
1
10
100
1000 VCE = 1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE = 1V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
1 10 100
0.1
1
10
10µs
100µs
1ms
10ms
BD433
IC MAX. (Pulsed)
BD437
BD435
DC
IC Max. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
6
12
18
24
30
36
42
48
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD433/435/437
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. H2
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1. Life support devices or systems are devic es or syst em s
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
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any manner without notice.
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