© 2005 IXYS All rights reserved
G = Gate D = Drain
S = Source TAB = Drain
DS99476E(10/05)
PolarHVTM HiPerFET
Power MOSFET IXFA 12N80P
IXFH 12N80P
IXFP 12N80P
N-Channel Enhancement Mode
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 μA 800 V
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C 250 μA
RDS(on) VGS = 10 V, ID = 0.5 ID25 , Note 1 1.1 Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGS Continuous ±20 V
VGSM Tranisent ±30 V
ID25 TC= 25°C12A
IDM TC= 25°C, pulse width limited by TJM 36 A
IAR TC= 25°C12A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.2 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 250 °C
MdMounting torque (TO-220, TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
T0-220 & TO-263 4 g
TO-247 (IXFH)
(TAB)
VDSS = 800 V
ID25 = 12 A
RDS(on) ≤≤
≤≤
≤ 1.1 ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
TO-220 (IXFP)
D(TAB)
GS
TO-263 (IXFA)
GS(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 0.5 ID25, Note 1 13 18 S
Ciss 2800 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 210 pF
Crss 19 pF
td(on) 21 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns
td(off) RG= 5 Ω (External) 62 ns
tf22 ns
Qg(on) 51 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 13 nC
Qgd 19 nC
RthJC 0.35 K/W
RthCK (TO-247) 0.21 K/W
(TO-220) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 12 A
ISM Repetitive 36 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IS = 18 A, VGS = 0 V 200 250 ns
Qrm -di/dt = 100 A/μs, VR = 100 V 1.0 μC
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXFP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 (IXFA) Outline
Pins: 1 - Gate 2, 4 - Drain
3 - Source
TO-247 (IXFH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2005 IXYS All rights reserved
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
Fig. 2. Extended Ou tput Characteristics
@ 25
º
C
0
4
8
12
16
20
24
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
I D - Amperes
V
GS
= 10 V
7V
5V
6V
Fig. 3. Output Characte ristics
@ 125
º
C
0
2
4
6
8
10
12
0 4 8 12162024
VD S - V olts
I D - Amp ere s
V
GS
= 10 V
7V
6V
5V
Fig. 1. Output Charact erist ics
@ 25
º
C
0
2
4
6
8
10
12
024681012
VD S - V olts
I D - Am peres
V
GS
= 10V
7V
5V
6V
Fi g. 4. RDS(on
)
Normalized to 0.5 ID25
Value vs . Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
TJ
- Degrees Centigr ade
R D S ( o n ) - Norma li zed
I
D
= 12A
I
D
= 6A
V
GS
= 10 V
Fig. 6. Drain Current v s. Ca se
Temperature
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
TC
- Degrees Ce ntigrade
I D - Amperes
Fi g. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
024681012141618202224
I D - Amperes
R D S ( o n ) - Normalized
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- nanoCoulombs
V
G S
- Vo lts
V
DS
= 400V
I
D
= 6A
I
G
= 10m A
Fig . 7. Inpu t Ad mittance
0
2
4
6
8
10
12
14
16
4 4.5 5 5.5 6 6.5
V
G S
- Volts
I
D
- Ampere s
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. T ran scon duct ance
0
3
6
9
12
15
18
21
24
0 2 4 6 8 1012141618
I
D
- Amperes
g
f s
- S ie m ens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Sour ce Curr ent vs.
Source- To- Drain Voltage
0
5
10
15
20
25
30
35
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Am peres
T
J
= 125
º
C
T
J
= 25
º
C
© 2005 IXYS All rights reserved
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
Fi g. 12. Maximum T ransient Thermal Resist ance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R ( t h ) J C - ºC / W
