PolarHVTM HiPerFET Power MOSFET IXFA 12N80P IXFH 12N80P IXFP 12N80P = = VDSS ID25 RDS(on) trr 800 V 12 A 1.1 250 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Tranisent 30 V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 36 A IAR TC = 25C 12 A EAR TC = 25C 30 mJ EAS TC = 25C 1.2 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 10 V/ns PD TC = 25C 360 W -55 ... +150 150 -55 ... +150 C C C 300 250 C C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-247 T0-220 & TO-263 G S (TAB) TO-247 (IXFH) (TAB) TO-220 (IXFP) TJ TJM Tstg TL TO-263 (IXFA) (TO-220, TO-247) G 1.13/10 Nm/lb.in. 6 4 D S G = Gate S = Source g g (TAB) D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 A 800 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V z z V z RDS(on) TJ = 125C VGS = 10 V, ID = 0.5 ID25 , Note 1 (c) 2005 IXYS All rights reserved 5.0 V 100 nA 25 250 A A 1.1 International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99476E(10/05) IXFA 12N80P IXFH 12N80P IXFP 12N80P Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, Note 1 13 18 S 2800 pF 210 pF Crss 19 pF td(on) 21 ns Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 5 (External) 62 ns tf 22 ns Qg(on) 51 nC 13 nC 19 Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.35 (TO-247) (TO-220) RthCK 0.21 0.25 Source-Drain Diode TO-263 (IXFA) Outline Pins: 1 - Gate 2, 4 - Drain 3 - Source Dim. Millimeter Min. Max. Inches Min. Max. nC A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 K/W b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 K/W K/W Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive 36 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr Qrm IS = 18 A, VGS = 0 V -di/dt = 100 A/s, VR = 100 V 250 ns C 200 1.0 TO-220 (IXFP) Outline Note 1: Pulse test, t 300 s, duty cycle d 2 % TO-247 (IXFH) Outline 1 2 3 Dim. Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXFA 12N80P IXFH 12N80P IXFP 12N80P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte r is tics @ 25 C @ 25 C 12 24 V GS = 10V 7V 20 8 I D - Amperes I D - Amperes V GS = 10V 7V 10 6V 6 4 16 12 6V 8 4 2 5V 5V 0 0 0 2 4 6 8 10 0 12 3 6 9 V D S - V olts 18 21 24 27 30 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe r atur e @ 125 C 12 2.6 V GS = 10V 2.4 R D S ( o n ) - Normalized 7V 10 I D - Amperes 15 V D S - V olts Fig. 3. Output Char acte r is tics 6V 8 6 4 2 5V V GS = 10V 2.2 2 1.8 1.6 I D = 12A 1.4 I D = 6A 1.2 1 0.8 0 0.6 0 4 8 12 16 20 -50 24 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e Fig. 5. RDS(on) Nor m alize d to 0.5 ID25 V alue vs . ID 2.5 14 2.3 V GS = 10V 12 TJ = 125 C 2.1 10 I D - Amperes R D S ( o n ) - Normalized 12 1.9 1.7 1.5 8 6 4 1.3 TJ = 25 C 1.1 2 0.9 0 0 2 4 6 8 10 12 14 16 I D - A mperes (c) 2005 IXYS All rights reserved 18 20 22 24 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFA 12N80P IXFH 12N80P IXFP 12N80P Fig. 8. Tr ans conductance 14 21 12 18 TJ = 125 C - Siemens 24 25 C fs 16 -40 C g I D - Amperes Fig. 7. Input Adm ittance 10 8 6 15 12 9 6 2 3 0 0 4.5 5 5.5 6 25 C 125 C 4 4 TJ = -40 C 0 6.5 2 4 6 V G S - V olts Fig. 9. Sour ce Cur r e nt vs . Sour ce -To-Dr ain V oltage 10 12 14 16 18 Fig. 10. Gate Char ge 10 35 9 V DS = 400V 8 I D = 6A 7 I G = 10m A 30 V G S - Volts 25 I S - Amperes 8 I D - A mperes 20 TJ = 125 C 15 TJ = 25 C 10 6 5 4 3 2 5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 15 V S D - V olts 20 Q G 25 30 35 40 - nanoCoulombs Fig. 11. Capacitance 10000 Capacitance - picoFarads f = 1MH z C iss 1000 C oss 100 C rss 10 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 45 50 55 IXFA 12N80P IXFH 12N80P IXFP 12N80P Fig. 12. Maximum Transient Thermal Resistance R ( t h ) J C - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds (c) 2005 IXYS All rights reserved 0.1 1 10