SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N4236 * VCBO=80V(Min), VCEO=80V(Min) * Hermetic TO-39 Metal package. * Ideally suited for General Purpose and Amplifier Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TA = 25C Total Power Dissipation at Derate Above 25C TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 80V 80V 7V 1.0A 0.5A 1.0W 5.7mW/C 6W 34mW/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters Max. RJA Thermal Resistance, Junction To Ambient 175 RJC Thermal Resistance, Junction To Case 29 Units C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9243 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N4236 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100mA ICEX Collector Emitter Cut-Off Current ICBO Collector Base Cut-Off Current Collector Emitte Cut-Off Current Emitter to Base Cut-off Current (1) ICEO IEBO hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 60V Min. Typ Max. 80 Units V VBE = 1.5V 100 nA TA = 150C 1.0 mA VCB = 80V 100 nA VCB = 60V 1.0 VBE = 7V 0.5 mA IC = 100mA VCE = 1.0V 40 IC = 250mA VCE = 1.0V 30 TA = -55C 15 IC = 500mA VCE = 1.0V 20 IC = 1.0A IB = 100mA 0.6 IC = 500mA IB = 50mA 0.4 IC = 500mA IB = 50mA 1.1 IC = 1.0A IB = 100mA 1.5 IC = 100mA VCE = 10V 150 - V DYNAMIC CHARACTERISTICS | hFE | Magnitude of small-signal short-circuit forward-current transfer ratio Cobo Open Circuit Output Capacitance 3 - f = 1.0MHz VCB = 10V IE = 0 100 f = 1.0MHz pF Notes (1) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9243 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N4236 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 9243 Issue 1 Page 3 of 3