Transys Electronics L I M I T E D SOT-363 Plastic-Encapsulated Transistors 2N7002DW MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Symbol Parameter unless otherwise specified) Test conditions MIN TYP MAX V(BR)DSS VGS=0 V, ID=10 A 60 70 Vth(GS) VDS=VGS, ID=250 A 1 1.5 Gate-body Leakage* lGSS VDS=0 V, VGS=20 V 10 Zero Gate Voltage Drain Current * IDSS VDS=60 V, VGS=0 V 1 VDS=60V,VGS=0V,Tj=125 500 On-state Drain Current * ID(ON) Drain-Source On-Resistance * rDS(0n) Drain-Source Breakdown Voltage * Gate-Threshold Voltage* VGS=10 V, VDS=7.5 V 7.5 VGS=10 V, ID=500 mA 4.4 13.5 Input Capacitance Ciss VDS=25 V, VGS=0 V Output Capacitance Coss Reverse Transfer Capacitance CrSS Turn-on Time td(0n) Turn-off Time td(off) V nA A mA 3.2 VDS=10 V, ID=200 mA * 1000 VGS=5 V, ID=50 mA gFS Forward Tran conductance 500 2 UNIT 80 ms 22 50 11 25 f=1 MHz 2 5 VDD=30 V, RL=150 7 20 11 20 pF SWITCHING * Pulse test , pulse width300s, duty cycle2% . Marking: K72 ID=200 mA, VGEN=10 V RG=25 ns