MOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 SiliconixIRF350 = IRF3541 # IRF352 IRF353 rs A00V; -Channel Enhancement Mode hove oe MOSPOWER These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. FEATURES Product Summary a High Voltage Neate: BVpss | Rosion Ip Package a No Second Breakdown IRF350 400V a High Input Impedance TRF a50V 0.80 15A a Internal Drain-Source Diode IAF352 400V TO-3 | m Very Rugged: Excellent SOA TAFasS 350V 0.40 134 a Extremely Fast Switching BENEFITS w Reduced Component Count oo tS a Improved Performance s a Simpler Designs a Improved Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current IRF350 .. 0... cece cece eee e nee nee eee eee e nen n eee 400V Pulsed (80yus to 300us, 1% duty cycle)...........0....006. +60A IRFBS1 occ n eter entree 350V Gate Current (Peak) ........ 00. cece cece eee e eee enee t3A IRF352 0. cece ete e een e eee ee ener nee 400V ( ) WRFS53 ooo cee cee cece eee nett e eee renenees 350V Gate-Source Voltage 1.0.00... ccc ccc cnet e eee e eens +40V Drain-Gate Voltage Total Power Dissipation ...........: cece cece eee e peer eeneeee 150 W IRF35O ....5..e eee eeseeeeeeeececteeenteseeet sen ese rece eset 400V Linear Derating Factor ............. ccc cece e ener e eee L2W/?C PRFB51 occ ener ee een n enna e eres 350V ; IRFG52 oo e ccc cence eee tee eben ene t ee eee eee 400V Operating and Storage UD ck 056 350V Temperature .... 2... cece cence eens -55C to + 150C Drain Current Continuous IRF350, 351.0... ce ee eens +15A IRF352, 353.0... ee eee +13A 0.875 0.450 (11.43) Lae (22.225) | 0.250 (6.35) 0.135 max Max (3.429) Cc SEATING 1] o0ae tases) in PLANE 1.197 (30.404) ene V7?) (29.896) 0.675 (17.145) 0.655 (16.637) 0.440 (11.176) t oaz0 10.668) PIN 1 Gate 0.161 (4.089) PIN 2 Source 0.151 (3.835) CASE Drain 0.225 (5.715) 5 0.205 (5.207) RMAX 0.52 Bottom view (73.335) TO-3 2-24 SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted)* Part Parameter Number * Min Typ Max Unit Test Conditions Static IRF350 By, Drain-Source Breakdown IRF352 400 DSS Voltage IRFS51 Vv Veg = 0, Ip = 250pA IRF353 350 Vesith) Gate Threshold Voltage All 2.0 3.2 4.0 Vv Vos = Vas: lp = 1-mA less Gate-Body Leakage All 50 +100 nA Veg = + 20V, Vos =0 Zero Giate Voltage Drain 01 | 0.25 Vos = Rated Vps, Vas = 0 loss Current All ma 0.2 1.0 Vos = Rated Vog, Veg = 0, Te = 125C Ipjon) ~~ On-State Drain Current All 15 A Vos = 25V, Veg = 10V (Note 1) IRF350 0.25 0.3 F Static Drain-Source On-State IRF354 a | Vas =10V. In=8A (Note 1 DS(on) Resistance IRF352 as = 10, Ip = 8A (Note 1) IRF353 93 | 04 Dynamic Dts Forward Transconductance All 8 9.0 Ss Vos = 100V, Ip = 8A (Note 1) Ciss Input Capacitance 2500 3000 Coss Output Capacitance Alt 400 600 pF Ves = 9, Vos = 25V, f= 1 MHz Ciss Reverse Transfer Capacitance 100 200 tgon) Turn-On Delay Time Alt 25 35 t, Rise Time All 50 -| 65- ns Vop = 200V, | 52 8A, R, = 252, Ry =52 tat) Turn-Off Delay Time All 75 150 (Fig. 1) t Fall Time All 50 75 Drain-Source Diode Characteristics Vsp Forward On Voltage All -1.5 v lg = -15A Veg = 0 (Note 1) tr Reverse Recovery Time All 400 ns Ip =15A, Ves =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 us to 300 xs, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circuit v v WA IN DD 50.2 di/dt Adjust (1 - 27 UH) r a | + 5 TO 50uF A [~ TY | | 1N4933 4 rT . V(pK Adjust , | Rgen I | Lovour 6 | Wt | ~ io | s | 2400 IN4001 20V @ + 2 | | | | 4000uF = 3 > | | | | | ciReurr = | R$ 0250 PULSE UNDER L$ 0.01uH [Generator] [TEST | PW. = 1s Cy <50 pF +4 ? i WW DUTY CYCLE = 1% 1NA723 Go" SCOPE FROM TRIGGER CKT 7 Siliconix 2-25 SSeddl = CSeidl = bSEIal = OSes